Patents by Inventor Michael S. Cox
Michael S. Cox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080008842Abstract: Methods for reducing plasma instability for plasma depositing a dielectric layer are provided. In one embodiment, the method includes providing a substrate in a plasma processing chamber, flowing a gas mixture into the chamber, applying an RF power to an electrode to form a plasma in the chamber, and collecting DC bias information. In another embodiment, the method for plasma processing includes obtaining of DC bias information over a plurality of plasma generation events, and determining an RF power application parameter from the DC bias information.Type: ApplicationFiled: July 7, 2006Publication date: January 10, 2008Inventors: Jyr Hong Soo, Matthew Spuller, Michael S. Cox, Martin Jay Seamons, Amir Al-Bayati, Bok Hoen Kim, Hichem M'Saad
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Publication number: 20070295602Abstract: The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.Type: ApplicationFiled: June 27, 2006Publication date: December 27, 2007Inventors: Jennifer W. Tiller, Anantha Subramani, Michael S. Cox, Keith A. Miller
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Patent number: 7189639Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.Type: GrantFiled: February 10, 2005Date of Patent: March 13, 2007Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Michael S. Cox, Bruno Geoffrion, Srinivas D. Nemani
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Patent number: 7097886Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.Type: GrantFiled: December 13, 2002Date of Patent: August 29, 2006Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
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Patent number: 6992024Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: GrantFiled: December 5, 2003Date of Patent: January 31, 2006Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao
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Patent number: 6894474Abstract: A probe for measuring plasma properties in a processing chamber, comprises a conductive rod having a front portion and a rear portion. The front portion of the conductive rod comprises a probe surface adapted to be coplanar with an interior wall of the chamber. The probe also includes an insulating sheath circumscribing the conductive rod.Type: GrantFiled: June 7, 2002Date of Patent: May 17, 2005Assignee: Applied Materials, Inc.Inventors: Michael S. Cox, Canfeng Lai, Qiwei Liang
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Patent number: 6890597Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.Type: GrantFiled: May 9, 2003Date of Patent: May 10, 2005Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
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Patent number: 6878644Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: GrantFiled: May 6, 2003Date of Patent: April 12, 2005Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao, Khaled Elsheref, Alexandros T. Demos
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Patent number: 6841006Abstract: A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.Type: GrantFiled: August 23, 2001Date of Patent: January 11, 2005Assignee: Applied Materials, Inc.Inventors: Michael Barnes, Michael S. Cox, Canfeng Lai, John Parks
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Publication number: 20040226511Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226512Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226658Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040224479Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: ApplicationFiled: May 6, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao, Khaled Elsheref, Alexandros T. Demos
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Publication number: 20040224496Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: ApplicationFiled: December 5, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao
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Publication number: 20040224090Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.Type: ApplicationFiled: May 9, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
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Publication number: 20040182517Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040185610Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6755150Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: GrantFiled: April 20, 2001Date of Patent: June 29, 2004Assignee: Applied Materials Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040115898Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.Type: ApplicationFiled: December 13, 2002Publication date: June 17, 2004Applicant: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
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Patent number: 6712020Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.Type: GrantFiled: June 12, 2002Date of Patent: March 30, 2004Assignee: Applied Materials Inc.Inventors: Michael S. Cox, Canfeng Lai, Robert B. Majewski, David P. Wanamaker, Christopher T. Lane, Peter Loewenhardt, Shamouil Shamouilian, John P. Parks