Patents by Inventor Michael S. Hibbs
Michael S. Hibbs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140297223Abstract: Various embodiments provide systems, computer program products and computer implemented methods. In some embodiments, the system includes a method of determining a characteristic of an optical mask. The method including: generating a first set of electromagnetic field (EMF) simulation data about the optical mask, using a first set of simulation criteria; determining a first correlation between optical metrology data about the optical mask and the first set of EMF simulation data; and determining the characteristic of the optical mask based upon the first correlation between the optical metrology data and the first set of EMF simulation data.Type: ApplicationFiled: April 1, 2013Publication date: October 2, 2014Inventors: Michael S. Hibbs, Ian P. Stobert, Jaione Tirapu-Azpiroz
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Patent number: 8815475Abstract: A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.Type: GrantFiled: January 7, 2013Date of Patent: August 26, 2014Assignee: International Business Machines CorporationInventors: Kevin S. Petrarca, Donald F. Canaperi, Mahadevaiyer Krishnan, Rebecca D. Mih, Steven Steen, Henry Grabarz, Michael S. Hibbs
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Patent number: 8439728Abstract: A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.Type: GrantFiled: October 21, 2011Date of Patent: May 14, 2013Assignee: International Business Machines CorporationInventors: Kevin S. Petrarca, Donald F. Canaperi, Mahadevaiyer Krishnan, Rebecca D. Mih, Steven Steen, Henry Grabarz, Michael S. Hibbs
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Patent number: 8271910Abstract: A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.Type: GrantFiled: March 29, 2010Date of Patent: September 18, 2012Assignee: International Business Machines CorporationInventors: Jaione Tirapu-Azpiroz, Timothy A. Brunner, Michael S. Hibbs, Alan E. Rosenbluth
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Publication number: 20120040277Abstract: A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.Type: ApplicationFiled: October 21, 2011Publication date: February 16, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kevin S. Petrarca, Donald F. Canaperi, Mahadevaiyer Krishnan, Rebecca D. Mih, Steven Steen, Henry Grabarz, Michael S. Hibbs
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Patent number: 8110321Abstract: A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.Type: GrantFiled: May 16, 2007Date of Patent: February 7, 2012Assignee: International Business Machines CorporationInventors: Kevin S. Petrarca, Donald F. Canaperi, Mahadevaiyer Krishnan, Rebecca D. Mih, Steven Steen, Henry Grabarz, Michael S. Hibbs
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Publication number: 20110239169Abstract: A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.Type: ApplicationFiled: March 29, 2010Publication date: September 29, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jaione Tirapu-Azpiroz, Timothy A. Brunner, Michael S. Hibbs, Alan E. Rosenbluth
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Patent number: 7742632Abstract: An inspection system uses inspection data biased to compensate for mismatches that occur as a result of using an optical lithography system to print an alternating phase shift mask that operates at a wavelength of light that is different from the wavelength of light that an inspection system uses to inspect the mask for defects.Type: GrantFiled: October 13, 2006Date of Patent: June 22, 2010Assignee: International Business Machines CorporationInventors: Karen D. Badger, Michael S. Hibbs, Christopher K. Magg
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Patent number: 7642016Abstract: A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.Type: GrantFiled: February 20, 2006Date of Patent: January 5, 2010Assignee: International Business Machines CorporationInventors: Michael S. Hibbs, Timothy A. Brunner
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Patent number: 7492941Abstract: An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.Type: GrantFiled: June 27, 2007Date of Patent: February 17, 2009Assignee: International Business Machines CorporationInventors: James A. Bruce, Orest Bula, Edward W. Conrad, William C. Leipold, Michael S. Hibbs, Joshua J. Krueger
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Patent number: 7492940Abstract: An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.Type: GrantFiled: June 12, 2007Date of Patent: February 17, 2009Assignee: International Business Machines CorporationInventors: James A. Bruce, Orest Bula, Edward W. Conrad, William C. Leipold, Michael S. Hibbs, Joshua J. Krueger
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Publication number: 20080286660Abstract: A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.Type: ApplicationFiled: May 16, 2007Publication date: November 20, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kevin S. Petrarca, Donald F. Canaperi, Mahadevaiyer Krishnan, Rebecca D. Mih, Steven Steen, Henry Grabarz, Michael S. Hibbs
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Patent number: 7416820Abstract: An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as TeflonĀ® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.Type: GrantFiled: January 31, 2007Date of Patent: August 26, 2008Assignee: International Business Machines CorporationInventors: Timothy A Brunner, Michael S Hibbs
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Publication number: 20080182180Abstract: An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as TeflonĀ® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.Type: ApplicationFiled: January 31, 2007Publication date: July 31, 2008Inventors: Timothy A. Brunner, Michael S. Hibbs
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Publication number: 20080089575Abstract: An inspection system uses inspection data biased to compensate for mismatches that occur as a result of using an optical lithography system to print an alternating phase shift mask that operates at a wavelength of light that is different from the wavelength of light that an inspection system uses to inspect the mask for defects.Type: ApplicationFiled: October 13, 2006Publication date: April 17, 2008Inventors: Karen D. Badger, Michael S. Hibbs, Christopher K. Magg
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Publication number: 20070196741Abstract: A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.Type: ApplicationFiled: February 20, 2006Publication date: August 23, 2007Inventors: Michael S. Hibbs, Timothy A. Brunner
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Patent number: 7257247Abstract: An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.Type: GrantFiled: February 21, 2002Date of Patent: August 14, 2007Assignee: International Business Machines CorporationInventors: James A. Bruce, Orest Bula, Edward W. Conrad, William C. Leipold, Michael S. Hibbs, Joshua J. Krueger
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Patent number: 7239376Abstract: In a projection apparatus for projecting optical images, an optical mask support stage having a pair of separated arms. Each arm being provided with a respective mask chucking bar that supports a respective edge of a thin glass mask and applies to the respective edge a bending moment away from the center of the mask to reduce or eliminate any gravitational induced sag in the center of the mask thereby improving the quality of the images projected by the apparatus.Type: GrantFiled: July 27, 2005Date of Patent: July 3, 2007Assignee: International Business Machines CorporationInventors: Michael S. Hibbs, Max G. Levy, Kenneth C. Racette
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Patent number: 7134933Abstract: A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.Type: GrantFiled: February 15, 2005Date of Patent: November 14, 2006Assignee: International Business Machines CorporationInventors: Donald W. Brouillette, Thomas G. Ference, Harold G Linde, Michael S. Hibbs, Ronald L. Mendelson
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Patent number: 7061590Abstract: The invention provides systems and a method for reducing pellicle distortion. One feature of the invention reduces distortion of a pellicle by providing an airtight mounting structure for coupling a pellicle to a mask; and a port on the mounting structure though which a pressure difference can be created between the interior portion and an exterior environment. Hence, distortion can be reduced by controlling the pressure in the interior portion between the pellicle, the pellicle mounting structure and the mask. Another feature places an aerodynamic fairing adjacent the mask to reduce aerodynamic drag and, hence, suppress turbulent air flow over the pellicle. The features can be used separately or in combination.Type: GrantFiled: December 16, 2003Date of Patent: June 13, 2006Assignee: International Business Machines CorporationInventor: Michael S. Hibbs