Abstract: A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: Photochromic glass is situated between a light source for exposing resist coated on a wafer and the wafer. The photochromic glass is activated by a wavelength different from that which activates the resist. An array of individual light sources, each of varying intensity, provide activation light to the photochromic glass. A CCD array temporarily in the imaging plane measures light intensity distribution. A controller varies the individual light source array intensities to activate the photochromic glass to varying degrees to produce a desired effect at the imaging plane.

Abstract: This describes a test pattern and method for measuring dimensional characteristics of features formed on a surface. This is realized and provided by forming a space, defined by the feature, in intersecting relationship with a pair of conductive lines of a test pattern configuration such that the lines are altered at the intersection with the space in accordance with the dimensions of that space, measuring the resistance of at least one of the lines in a region remote from the intersection with the space and the resistance of each line in the region of its intersection with the space, and comparing the resistance of the remote region with the resistances for the region of each of the lines where they intersect the space to thereby establish the position of, and at least one dimension of that space.

Abstract: A lithographic mask with an exposure monitor for imaging a gray scale feature. The exposure monitor has abutting regions of differing optical density disposed on the mask for imaging the gray scale feature by taking advantage of diffraction effects. After calibrating gray scale feature size to critical feature size, a gray scale feature may be imaged to monitor critical feature size due to exposure.

Abstract: A photolithography mask structure having a novel optical focus test pattern is described. The mask structure has a non-phase-shifted, transparent substrate and includes a phase shifter of other than 180.degree. disposed between spaced, parallel opposing lines such that an alternating pattern of non-phase-shifted material and phase-shifted material is defined transverse said parallel lines. When projected onto the surface of an object measurable shifts of the test pattern corresponds in direction and magnitude with the extent of system defocus. Various alternating test pattern embodiments are presented, all of which include at least one phase shift window of other than 180.degree. in relation to the mask substrate. Further, a monitoring system and a monitoring process are discussed employing the presented mask structures.