Abstract: The invention consists of non-self supporting containment bag used in conjunction with a dumpster container. The bag and liner each have a zipper, where the zippers are centered on the bag top and the bag is constructed one piece of material.

Abstract: A lifting bag having at least one side wall and a closed bottom forming an interior, the bag further having a closable top portion connected to the sidewall and adapted to close the interior of the bag. The opening is a single slit centered on the bag top and closable with a zipper. The lifting bag includes a sling coupled to the bag, generally through a edge strip positioned at ore near the top edge of the bag. The bag can be constructed from a single multilayered sheet. The bag is used in conjunction with a lifting strap system.

Abstract: A lifting bag having at least one side wall and a closed bottom forming an interior, the bag further having a closable top portion connected to a portion of the sidewall and adapted to close the interior of the bag. The lifting bag includes at least one bottom support member positioned on the bag bottom and forming a bottom support pattern. The lifting bag includes a series of side support members positioned on the sidewall, where the side support members are connected to the bag sidewall in a fashion to allow a substantial length of the sidewall near the bag top to move independently of the side support members. The side support members are connected to the bottom support.

Abstract: The invention presented describes a system and procedure for protecting against the espionage of secret information. A counter is allocated to each secret piece of information, in particular codes. The counter counts the number of uses of the secret information. In this, the counter is set to a starting value. Each use of the secret data element increases the counter state by a defined value. If the counter state reaches a maximum value, the use of the secret data element will be blocked. The blocking of the secret information can, however, be avoided if a defined event occurs before the maximum value of the counter is reached which automatically resets the counter state to its starting value. Any technical, economic or organisational condition can be defined as an event. Particular advantages of the invention presented are that each code can have its own counter allocated to it. In this way, different numbers of uses can be established for each code with regard to its function.

Abstract: The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.

Abstract: An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured.

Abstract: Monolithic integrated optical semiconductor components with a buried ridge stripe waveguide (BRS) are used for optical communications. They contain active (AB) and passive (PB) waveguide regions. High absorption losses occur in passive waveguide regions with a buried ridge stripe waveguide, while passive waveguide regions with low-loss rib waveguides have reflections and leakage losses in the junction with the active waveguide regions. A semiconductor component (BE2) according to the invention has a buried ridge stripe waveguide (BRS) in active (AB) as well as passive (PB) waveguide regions, which is covered by a cap layer (DS). In addition the passive regions (PB) have a semi-insulating or undoped cladding layer (MS) between the ridge stripe waveguide (BRS) and the cap layer (DS). A process is furthermore indicated whereby a semiconductor component according to the invention can be manufactured.

Abstract: A method for producing a cascaded optical space switch and a cascaded optical space switch manufactured with this method are shown being made of many optical branches produced on a single substrate. Here a method is used for growing active, i.e., controllable light amplifying or light absorbing waveguide areas, which can produce locally restrictable different layer thicknesses and/or material compositions of the grown active layers, during the same operation. The number and location of active (1, 3) and passive (2, 4) waveguide areas can be determined by the configuration of areas (M), e.g., masked with SiO.sub.2, prior to the actual growth.

Abstract: A method for producing a cascaded optical space switch and a cascaded optical space switch manufactured with this method are shown being made of many optical branches produced on a single substrate. Here a method is used for growing active, i.e., controllable light amplifying or light absorbing waveguide areas, which can produce locally restrictable different layer thicknesses and/or material compositions of the grown active layers, during the same operation. The number and location of active (1, 3) and passive (2, 4) waveguide areas can be determined by the configuration of areas (M), e.g., masked with SiO.sub.2, prior to the actual growth.

Abstract: A semiconductor device is operated as an optical filter. The semiconductor device has a substrate and a monolithically integrated branched waveguide structure disposed above the substrate, portions of the waveguide structure being divided into a plurality of regions by troughs, one of the regions being a branching region. Light is radiated into the waveguide structure at an end face of one of the regions and currents that are smaller than respective laser threshold currents of the regions flow through the regions, including the branching region, perpendicular to a propagation direction of light through the waveguide.

Abstract: A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.

Abstract: An interferometric semiconductor laser includes a cavity in the form of a Y and at east three individually actuatable active segments. A central segment couples together the individually actuatable active segments. The central segment is an active or passive segment that acts as a beam divider. The arrangement of the segments forms two resonator paths which contain at least one common active segment. At least one resonator path includes an active segment that does not belong to the other resonator path. In the absence of, or with the same actuation of the active segments, the optical path length of one resonator path differs from the optical path length of the other resonator path.

Abstract: A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current is related to the reciprocal of the round-trip time or an integral multiple of this reciprocal of light pulses generated by the alternating current in the semiconductor laser.

Abstract: An optical device includes a semiconductor laser monolithically integrated on a substrate having a branched cavity extending above a plane that is coplanar with a base surface of the substrate, and an adjustable optical power light source for radiating light into the cavity of the semiconductor laser thereby controlling the operation of the semiconductor laser optically.

Abstract: A semiconductor laser which comprises a grating, a waveguide layer applied to the grating by LPE, and a plurality of layers disposed above the waveguide layer. This laser is characterized in that the layers disposed on the waveguide layer are applied with the aid of gas phase epitaxy or molecular beam epitaxy. Particularly preferred are MOVPE, MOMBE, GSMBE and CBE. Since the waveguide layer is applied with the aid of LPE directly onto the grating, the grating characteristics can be precisely predetermined. They remain intact during the application of the waveguide layer. The subsequent layers may be very thin. In particular, a very thin active layer or an MQW structure may be applied as the active layer. A buffer layer is provided between the waveguide layer and the active layer. A cladding layer and a ternary or quaternary contact layer lie above the active layer.

Abstract: A semiconductor laser which includes a controllable beam splitter has three segments including laser-active zones and a monitor diode forming a cross-shaped laser connected with one another by way of the beam splitter. The beam splitter is equipped with electrodes for controlling optical coupling between the segments.

Abstract: A semiconductor laser in which the photons injected from its waveguide region into the laser active region are those whose energies differ from the energy sum of the chemical potential of the electron-hole pairs and the energy of the longitudinal acoustic phonons by less than one-half the thermal energy is described. A current directed into the photon emission region in the area of the Bragg grating causes photons of this energy to be injected into the laser active region which is constituted of a layer of indium gallium arsenide phosphide.

Abstract: A cryptographic method and apparatus are disclosed which transform a message or arbitrary length into a block of fixed length (128 bits) defined modification detection code (MDC). Although there are a large number of messages which result in the same MDC, because the MDC is a many-to-one function of the input, it is required that it is practically not feasible for an opponent to find them. In analyzing the methods, a distinction is made between two types of attacks, i.e., insiders (who have access to the system) and outsiders (who do not). The first method employs four encryption steps per DEA block and provides the higher degree of security. Coupling between the different DEA operations is provided by using the input keys also as data in two of the four encryption steps. In addition, there is cross coupling by interchanging half of the internal keys.