Abstract: A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.

Abstract: A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: A silver film for die attachment in the field of microelectronics, wherein the silver film is a multilayer structure comprising a reinforcing silver foil layer between two layers of sinterable particles. Each layer of sinterable particles comprises a mixture of sinterable silver particles and reinforcing particles. The reinforcing particles comprise glass and/or carbon and/or graphite particles. A method for die attachment using a silver film.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: A silver film for die attachment in the field of microelectronics, wherein the silver film is a multilayer structure comprising a reinforcing silver foil layer between two layers of sinterable particles. Each layer of sinterable particles comprises a mixture of sinterable silver particles and reinforcing particles. The reinforcing particles comprise glass and/or carbon and/or graphite particles. A method for die attachment using a silver film.

Abstract: Materials for die attachment such as silver sintering films may include reinforcing, modifying particles for enhanced performance. Methods for die attachment may involve the of such materials.

Abstract: A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.

Abstract: Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Abstract: A jettable etchant composition includes 1 to 90 wt % active ingredient, and a remainder containing any combination of the following: 10 to 90 wt % solvent, 0 to 10 wt % reducing agents, <1 to 20 wt % pickling agent, 0 to 5 wt % surfactant, and 0 to 5 wt % antifoam agent. The composition can also include a soluble compound containing at least one element which when dissolved has a higher standard electrode potential than a metal to be etched or a soluble compound containing a group IA element, and a soluble platinum group metal. An ink composition can include a group VA compound or a group IIIA compound in a solvent system formulated to be jettable on a surface at a drop volume of about 5 to about 10 picoliters and to achieve a final sheet resistance of less than about 20 ?/? of the surface upon activation.

Abstract: Conductive patterns and methods of using and printing such conductive patterns are disclosed. In certain examples, the conductive patterns may be produced by disposing a conductive material between supports on a substrate. The supports may be removed to provide conductive patterns having a desired length and/or geometry.

Abstract: Certain examples disclosed herein are directed to materials that are designed for use in interconnects of electrical devices such as, for example, printed circuit boards and solar cells. In certain examples, a two-step solder may be used to reduce stresses on the materials used in the production of the electrical devices.

Abstract: A jettable etchant composition includes 1 to 90 wt % active ingredient, and a remainder containing any combination of the following: 10 to 90 wt % solvent, 0 to 10 wt % reducing agents, <1 to 20 wt % pickling agent, 0 to 5 wt % surfactant, and 0 to 5 wt % antifoam agent. The composition can also include a soluble compound containing at least one element which when dissolved has a higher standard electrode potential than a metal to be etched or a soluble compound containing a group IA element, and a soluble platinum group metal. An ink composition can include a group VA compound or a group IIIA compound in a solvent system formulated to be jettable on a surface at a drop volume of about 5 to about 10 picoliters and to achieve a final sheet resistance of less than about 20 ?/? of the surface upon activation.

Abstract: Conductive patterns and methods of using and printing such conductive patterns are disclosed. In certain examples, the conductive patterns may be produced by disposing a conductive material between supports on a substrate. The supports may be removed to provide conductive patterns having a desired length and/or geometry.

Abstract: Conductive patterns and methods of using and printing such conductive patterns are disclosed. In certain examples, the conductive patterns may be produced by disposing a conductive material between supports on a substrate. The supports may be removed to provide conductive patterns having a desired length and/or geometry.

Abstract: Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Abstract: Materials for die attachment such as silver sintering films may include reinforcing, modifying particles for enhanced performance. Methods for die attachment may involve the of such materials.

Abstract: Certain embodiments are directed to methods, devices and systems designed to remove selected portions of a material to expose an underlying material or substrate. One or more electrical components may be coupled to the underlying substrate through an electrical contact. Kits and systems for producing electrical contacts are also provided.

Abstract: Particles and particle films are provided. In certain examples, particles produced from a single phase process may be used to provide industrial scale synthesis of particles for use in devices such as printed wiring boards.