Patents by Inventor Michiyasu Ito

Michiyasu Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4853286
    Abstract: This invention provides a wafer processing film comprising a base film having a Shore D hardness of 40 or less and an adhesive layer disposed on one surface of the base film. In grinding the surfaces of wafers such as silicon and similar wafers, breakage can be prevented by affixing the wafers to the adhesive layer of the processing film and then grinding them.
    Type: Grant
    Filed: January 16, 1986
    Date of Patent: August 1, 1989
    Assignee: Mitsui Toatsu Chemicals, Incorporated
    Inventors: Osamu Narimatsu, Michiyasu Ito, Kazuyoshi Komatsu, Yasuhiro Shibata
  • Patent number: 4814124
    Abstract: A gas permeable porous film which is prepared by stretching a film made from a mixture containing a polyolefin resin and an inorganic filler at least uniaxially and possesses a rugged pattern on its surface. One process for producing the film comprises forming the aforesaid mixture into a film, providing on the surface of the film a rugged pattern, stretching the resulting film at least uniaxially, and forming on the stretched film thus-formed a rugged pattern by means of a heated emboss roll and simultaneously allowing the stretched film to contract.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: March 21, 1989
    Assignee: Mitsui Toatsu Chemicals Inc.
    Inventors: Mari Aoyama, Michiyasu Ito, Syoichi Tsuji, Toshiyuki Ishii, Tomohide Tanaka
  • Patent number: 4705813
    Abstract: A process for producing porous films which comprises blending 100 parts by weight of a polyolefin resin with 50 to 500 parts by weight of barium sulfate preferably having an average particle diameter of 0.1 to 7 .mu.m, melting the resulting resin composition and forming it into a film, and then stretching the film at least uniaxially by a factor of 1.5 to 7.
    Type: Grant
    Filed: December 14, 1984
    Date of Patent: November 10, 1987
    Assignee: Mitsui Toatsu Chemicals, Inc.
    Inventors: Keiko Ito, Michiyasu Ito, Shoichi Tsuji, Hisatosi Suzuki, Shoichi Ito
  • Patent number: 4705812
    Abstract: A process for producing porous films which comprises melting a resin composition consisting essentially of (1) 100 parts by weight of a high-pressure-processed low-density polyethylene resin having a melt index of 0.5 to 7 and a density of 0.915 to 0.935, a linear low-density polyethylene resin having a melt index of 0.5 to 8.5 and a density of 0.915 to 0.935, or a mixture thereof and (2) 50 to 500 parts by weight of barium sulfate having an average particle diameter of 0.1 to 7 .mu.m; forming the molten resin composition into a film; and then stretching the film at least uniaxially by a factor of 1.5 to 7. As the linear low-density polyethylene resin, a copolymer of ethylene and hexene and/or octene is particularly preferred.
    Type: Grant
    Filed: December 14, 1984
    Date of Patent: November 10, 1987
    Assignee: Mitsui Toatsu Chemicals, Inc.
    Inventors: Keiko Ito, Michiyasu Ito, Shoichi Tsuji, Hisatosi Suzuki
  • Patent number: 4699733
    Abstract: A porous film having a good water vapor permeability is obtained with a high productivity by melting a resin composition comprising 100 parts by weight of a polyolefin resin and 50 to 500 parts by weight of barium sulfate having an electric conductivity of 250 .mu.S/cm or less in terms of the electric conductivity of a supernatant formed when the barium sulfate is added to water, and a particle size of 0.1 to 7 .mu.m, making the melt into a film and stretching the film to 2.5 to 14 times the original area at least in the uniaxial direction.
    Type: Grant
    Filed: December 11, 1986
    Date of Patent: October 13, 1987
    Assignee: Mitsui Toatsu Chemicals, Inc.
    Inventors: Shuji Matsumura, Michiyasu Ito, Syoichi Tsuji, Hisatosi Suzuki, Syoichi Ito