Abstract: Provided is a joint product of a steel product and an aluminum material, the joint product being formed by joining the steel product having a sheet thickness t1 of 0.3 to 3.0 mm with the aluminum material having a sheet thickness t2 of 0.5 to 4.0 mm by spot welding, wherein a nugget area in a joint part is from 20×t20.5 to 100×t20.5 mm2, an area of a portion where a thickness of an interface reaction layer is from 0.5 to 3 ?m is 10×t20.5 mm2 or more, and a difference between the thickness of the interface reaction layer at a joint part center and the thickness of the interface reaction layer at a point distant from the joint part center by a distance of one-fourth of a joint diameter is 5 ?m or less, and wherein the aluminum material is pure aluminum or an aluminum alloy material.

Abstract: An FeO layer including fine crystal grains having random orientation is formed as inner layer scale on the surface of the steel wire rod containing C: 0.05-1.2 mass % (hereinafter referred to as “%”), Si: 0.01-0.50%, Mn: 0.1-1.5%, P: 0.02% or below, S: 0.02% or below, N: 0.005% or below, an Fe2SiO4 layer with the thickness: 0.01-1.0 ?m is formed in the boundary face between the FeO layer of the inner layer scale and steel, and the thickness of the inner layer scale is 1-40% of the total scale thickness. In another aspect, the maximum grain size of the crystal grain of the inner layer scale is 5.0 ?m or below and the average grain size is 2.0 ?m or below.

Abstract: Disclosed is a galvannealed steel sheet having an excellent surface appearance, wherein plating failure and non-uniform alloying are suppressed. Also disclosed is a method for producing such a galvannealed steel sheet. The galvannealed steel sheet is obtained by hot-dip galvanizing a base steel, and then alloying the plating layer. The base steel is obtained by hot rolling a steel which contains 0.02-0.25 mass % of C, 0.5-3 mass % of Si, 1-4 mass % of Mn, 0.03-1 mass % of Cr, not more than 1.5 mass % of Al (excluding 0 mass %), not more than 0.03 mass % of P (excluding 0 mass %), not more than 0.03 mass % of S (excluding 0 mass %) and 0.003-1 mass % Ti, and additionally contains 0.25-5.0 mass % of Cu and 0.05-1.0 mass % of Ni, while satisfying formula (1), with the balance being made up of iron and unavoidable impurities. [Cu]/[Ni]?5 In formula (1), [ ] represents the content (mass %) of each element.

Abstract: To provide a steel-aluminum welded material and a spot welding method therefor having high weld strength. The steel-aluminum welded material 3 includes a steel material 1 and an aluminum material 2 having predetermined widths. The area of a nugget 5 of a spot-welded part is determined as a function of the thickness of the aluminum material 2, and the area of a part of the nugget 5 corresponding to a part having a thickness in a range between 0.5 and 10 ?m of an interface reaction layer 6 is defined as a function of the thickness of the aluminum material 2.

Abstract: A joined body of dissimilar metals which is produced by joining a steel material and an aluminum alloy material, wherein the steel material to be joined has a specific composition and is specified in the compositions of outer surface oxide layer and inner oxide layer and the aluminum alloy material to be joined is an Al—Mg—Si-base aluminum alloy having a specific composition. In the joined body of dissimilar metals, a content of Fe at a joint interface on the aluminum alloy material side is regulated, and a reaction layer of Fe and Al is formed at the joint interface of the joined body of dissimilar metals. The joined body of dissimilar metals exhibits high joint strength.

Abstract: A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device. More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.

Abstract: The present invention aims at providing a method for production of a steel product which surely retains scale during cooling, storage, and transportation and permits scale to scale off easily at the time of mechanical descaling and pickling that precede the secondary fabrication. The steel product is produced by heating and hot rolling a steel billet and spraying the hot-rolled steel product with steam and/or water mist having a particle diameter no larger than 100 ?m, for surface oxidation.

Abstract: A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 ?m or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.

Abstract: A hard film formed of a material containing a (M1?xSix)(C1?dNd) compound, wherein M is at least one of A1 and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, wherein x, 1?x, d and 1?d are atomic ratios of Si, M, N and C, respectively.

Abstract: Disclosed are: a dissimilar material weld joint being formed by joining an iron type material and an aluminum type material and having not only a high strength but also an excellent ductility; and a weld joining method allowing such a joint to be stably produced. A dissimilar material weld joint 1 formed by joining an iron type material 2 and an aluminum type material 3, wherein: voids 4a are formed beforehand on the side of said iron type material 2 at a predetermined interval along a weld line 6; both said iron type and aluminum type materials are weld joined so that said voids 4a are filled with molten aluminum 7; and the minimum value of the ratio (L-Al)/(L-Fe) of the length (L-Al) of an aluminum type welding material 10 with which said voids 4a are filled to the length (L-Fe) of said iron type material 2 adjacent to said voids 4a filled with said aluminum type welding material 10 along said weld line 6 on the section containing said weld line 6 is in the range from 0.

Abstract: A Cu wire in a semiconductor device according to the present invention is a Cu wire embedded into wiring gutters or interlayer connective channels formed in an insulating film on a semiconductor substrate and the Cu wire comprises: a barrier layer comprising TaN formed on the wiring gutter side or the interlayer connective channel side; and a wire main body comprising Cu comprising one or more elements selected from the group consisting of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re, and Os in a total content of 0.05 to 3.0 atomic percent. The Cu wire in a semiconductor device according to the present invention is excellent in adhesiveness between the wire main body and the barrier layer.

Abstract: Disclosed is an alloyed hot-dip galvanized steel sheet containing 2.0 to 3.5 percent by mass of Mn. The steel sheet includes a base steel sheet and a galvanized zinc-coat layer thereon, in which MnO particles are present in an average number of 10 or less per micrometer on a straight line lying in an interface between the galvanized zinc-coat layer and the steel sheet, an Fe—Al—O alloy layer is present at the interface between the MnO particles and the steel sheet, and the length of the Fe—Al—O alloy layer is less than 10% of the overall length of the interface. The alloyed hot-dip galvanized steel sheet, even though having a high Mn content, is resistant to uneven alloying and excels in surface appearance, because the amounts of the MnO particles and the Fe—Al—O alloy layer that cause uneven alloying are controlled.

Abstract: An FeO layer including fine crystal grains having random orientation is formed as inner layer scale on the surface of the steel wire rod containing C: 0.05-1.2 mass % (hereinafter referred to as “%”), Si: 0.01-0.50%, Mn: 0.1-1.5%, P: 0.02% or below, S: 0.02% or below, N: 0.005% or below, an Fe2SiO4 layer with the thickness: 0.01-1.0 ?m is formed in the boundary face between the FeO layer of the inner layer scale and steel, and the thickness of the inner layer scale is 1-40% of the total scale thickness. In another aspect, the maximum grain size of the crystal grain of the inner layer scale is 5.0 ?m or below and the average grain size is 2.0 ?m or below.

Abstract: The present invention aims at providing a method for production of a steel product which surely retains scale during cooling, storage, and transportation and permits scale to scale off easily at the time of mechanical descaling and pickling that precede the secondary fabrication. The steel product is produced by heating and hot rolling a steel billet and spraying the hot-rolled steel product with steam and/or water mist having a particle diameter no larger than 100 ?m, for surface oxidation.

Abstract: There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating film and Cu-interconnections, without causing a rise in electric resistivity of the interconnections when fabricating semiconductor interconnections of the Cu-alloy embedded in the recesses provided in the insulating film on a semiconductor substrate. The fabrication method for the interconnections may comprise the steps of forming the respective recesses having a minimum width not more than 0.15 ?m, and a ratio of a depth thereof to the minimum width (a depth/minimum width ratio) not less than 1, forming a Cu-alloy film containing Ti in a range of 0.5 to 3 at %, and N in a range of 0.4 to 2.0 at % over the respective recesses, and subsequently, annealing the Cu-alloy film to not lower than 200° C.

Abstract: Disclosed is a steel sheet for dissimilar materials weldbonding to an aluminum material, the steel sheet containing, in mass, C: 0.02 to 0.3%, Si: 0.2 to 5.0%, Mn: 0.2 to 2.0%, and Al: 0.002 to 0.1%, further one or more of Ti: 0.005 to 0.10%, Nb: 0.005 to 0.10%, Cr: 0.05 to 1.0%, and Mo: 0.01 to 1.0%, and the balance consisting of Fe and unavoidable impurities. In the steel sheet, (i) the proportion of the oxide containing Mn and Si by 1 at.

Abstract: There are provided a flux cored wire for joining dissimilar materials with each other, capable of enhancing a bonding strength upon joining an aluminum-base material with a steel-base material, and excellent in bonding efficiency, a method for joining the dissimilar materials with each other, and a bonded joint obtained by the method. In particular, there is provided a method for joining dissimilar materials with each other, in the case of melt weld-bonding of high-strength dissimilar materials with each other, that is, the high-strength steel member with the high-strength 6000 series aluminum alloy member and in the case of the steel member being a galvanized steel member. In one mode, use is made of a flux cored wire wherein the interior of an aluminum alloy envelope is filled up with a flux, the flux has fluoride composition containing a given amount of AlF3 without containing chloride, and the aluminum alloy of the envelope contains Si in a range of 1 to 13 mass %.

Abstract: To provide a joint product of a steel product and an aluminum material, and a spot welding method for the joint product, ensuring that spot welding with high bonding strength can be performed. In one embodiment, a steel product 1 having a sheet thickness t1 of 0.3 to 3.0 mm and an aluminum material 2 having a sheet thickness t2 of 0.5 to 4.0 mm are joined together by spot welding to form a joint product of a steel product and an aluminum produce. In this joint product, the nugget area in the joint part is from 20×t20.5 to 100×t20.5 mm2, the area of a portion where the thickness of the interface reaction layer is from 0.5 to 3 ?m is 10×t20.5 mm2 or more, and the difference between the interface reaction layer thickness at the joint part center and the interface reaction layer thickness at a point distant from the joint part center by a distance of one-fourth of the joint diameter Dc is 5 ?m or less.

Abstract: A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 ?m or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, wherein x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.