Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.

Abstract: There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating film and Cu-interconnections, without causing a rise in electric resistivity of the interconnections when fabricating semiconductor interconnections of the Cu-alloy embedded in the recesses provided in the insulating film on a semiconductor substrate. The fabrication method for the interconnections may comprise the steps of forming the respective recesses having a minimum width not more than 0.15 ?m, and a ratio of a depth thereof to the minimum width (a depth/minimum width ratio) not less than 1, forming a Cu-alloy film containing Ti in a range of 0.5 to 3 at %, and N in a range of 0.4 to 2.0 at % over the respective recesses, and subsequently, annealing the Cu-alloy film to not lower than 200° C.

Abstract: To provide a steel-aluminum welded material and a spot welding method therefor having high weld strength. The steel-aluminum welded material 3 includes a steel material 1 and an aluminum material 2 having predetermined widths. The area of a nugget 5 of a spot-welded part is determined as a function of the thickness of the aluminum material 2, and the area of a part of the nugget 5 corresponding to a part having a thickness in a range between 0.5 and 10 ?m of an interface reaction layer 6 is defined as a function of the thickness of the aluminum material 2.

Abstract: A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device. More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.

Abstract: Disclosed is a steel sheet for dissimilar materials weldbonding to an aluminum material, the steel sheet containing, in mass, C: 0.02 to 0.3%, Si: 0.2 to 5.0%, Mn: 0.2 to 2.0%, and Al: 0.002 to 0.1%, further one or more of Ti: 0.005 to 0.10%, Nb: 0.005 to 0.10%, Cr: 0.05 to 1.0%, and Mo: 0.01 to 1.0%, and the balance consisting of Fe and unavoidable impurities. In the steel sheet, (i) the proportion of the oxide containing Mn and Si by 1 at.

Abstract: A method for manufacturing a dissimilar metal joint member having an excellent corrosion resistance is provided. The method comprises immersing a member having an iron material and Al or an Al alloy material jointed together in a solution containing fluoro complex ions and zinc ions to cause metallic zinc to be deposited in the vicinity of a jointed portion.

Abstract: Disclosed are: a dissimilar material weld joint being formed by joining an iron type material and an aluminum type material and having not only a high strength but also an excellent ductility; and a weld joining method allowing such a joint to be stably produced. A dissimilar material weld joint 1 formed by joining an iron type material 2 and an aluminum type material 3, wherein: voids 4a are formed beforehand on the side of said iron type material 2 at a predetermined interval along a weld line 6; both said iron type and aluminum type materials are weld joined so that said voids 4a are filled with molten aluminum 7; and the minimum value of the ratio (L-Al)/(L-Fe) of the length (L-Al) of an aluminum type welding material 10 with which said voids 4a are filled to the length (L-Fe) of said iron type material 2 adjacent to said voids 4a filled with said aluminum type welding material 10 along said weld line 6 on the section containing said weld line 6 is in the range from 0.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.