Abstract: Disclosed are method(s), system(s), and article(s) of manufacture for implementing a layout of an electronic circuit using one or more constraint checking windows. The method identifies some constraints on multiple-patterning lithography and multiple constraint checking windows for the layout. The method determines one or more metrics for a constraint checking window or for a layout and assigns one or more shapes in the one or more constraint checking windows to their respective mask designs based on the one or more metrics. The method traverses through the one or more constraint checking windows until all shapes in the layout are assigned to their respective mask designs. The method may also determine a processing order for the one or more constraint checking windows based on the distribution of a type of shapes in the layout.

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.

Abstract: A method for automatically generating and prioritizing several design solutions that resolve a double patterning (DP) loop violation in an IC design layout. The method of some embodiments receives a DP loop violation marker and identifies pairs of edges of shapes that form a double patterning loop based on the DP loop violation marker. For each pair of edges that violates the design rule, the method generates one or more design solutions. Each design solution moves a single edge or both edges to resolve the violation. The method of some embodiments computes the cost of applying each design solution to the IC design layout and prioritizes the generated solutions for all the identified pairs of edges based on the computed cost for each solution. The method in some embodiments then selects a solution from the prioritized solutions and applies the selected solution to the design layout.

Abstract: A method of forming an integrated circuit including forming a first diffusion area and a second diffusion area on a substrate, wherein the first diffusion area is configured for a first type transistor, the second diffusion area is configured for a second type transistor. The method further includes forming first source and drain regions in the first diffusion area. The method further includes forming second source and drain regions in the second diffusion area. The method further includes forming a gate electrode extending across the first diffusion area and the second diffusion area. The method further includes forming a first metallic layer, a second metallic layer, and a third metallic layer. The first metallic layer is electrically coupled with the first source region. The second metallic layer is electrically coupled with the first and second drain regions. The third metallic layer is electrically coupled with the second source region.

Abstract: A hierarchical schematic design editor displays mask layers for each shape as mask specific colors and alerts a user to mask layer conflicts during the design and editing process. According to an embodiment, mask colors may be assigned at the time the shapes or geometries and cells are placed in a circuit design layout, or when a mask layer condition indicating that two or more shapes should be set to different mask layers is detected. In an embodiment, if the distance between two shapes is less than a predetermined threshold, those shapes may cause a mask layer condition. Shapes may be grouped to facilitate mask layer condition detection and mask layer assignment.

Abstract: The present disclosure provides for many different embodiments of a multiple patterning technology method and system. An exemplary method includes receiving a pattern layout having a plurality of features; coloring each of the plurality of features one of at least two colors, thereby forming a colored pattern layout, wherein the coloring includes coloring match-sensitive features a same color; and fabricating at least two masks with the features of the colored pattern layout, wherein each mask includes features of a single color.

Abstract: The present invention relates to a semi-aromatic polyamide and a method for preparing it with low wastewater discharge. The semi-aromatic polyamide for the present invention is obtained by introducing aromatic dicarboxylic acid, aliphatic diamine containing 4˜14 carbon atoms and the wastewater generated during the previous prepolymerization into an autoclave for prepolymerization reaction and then further polymerizing the prepolymer. In this preparation method, the wastewater generated during polymerization is recycled, thus greatly reducing the wastewater discharge; the raw materials in the wastewater are effectively recycled, thus improving the utilization rate of raw materials; meanwhile, the diamine in the wastewater compensates that lost along with water discharge during prepolymerization, thus ensuring the Mole ratio balance between dicarboxylic acid monomer and diamine monomer.

Abstract: A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. The first metallic layer is electrically coupled with the first source region. The first metallic layer and the first diffusion area overlap with a first distance. A second metallic layer is electrically coupled with the first drain region and the second drain region. The second metallic layer and the first diffusion area overlap with a second distance. The first distance is larger than the second distance.

Abstract: Methods for patterning integrated circuit (IC) features with varying dimensions are provided. In an example, a method includes forming a first patterned radiation-sensitive resist layer over a device substrate using a first mask, wherein the first patterned radiation-sensitive resist layer includes a first portion of an IC pattern; using the patterned first radiation-sensitive resist layer as a mask to form the first portion of the IC pattern in the device substrate; forming a second patterned radiation-sensitive resist layer over the device substrate using a second mask, wherein the second patterned radiation-sensitive resist layer includes a second portion of the IC pattern; and using the patterned second radiation-sensitive resist layer as a mask to form the second portion of the IC pattern in the device substrate. The combined first and second portions of the IC pattern in the device substrate form an IC feature having a dimension greater than dimensions of the first and second portions.

Abstract: A hierarchical schematic design editor displays mask layers for each shape as mask specific colors and alerts a user to mask layer conflicts during the design and editing process. According to an embodiment, mask colors may be assigned at the time the shapes or geometries and cells are placed in a circuit design layout, or when a mask layer condition indicating that two or more shapes should be set to different mask layers is detected. In an embodiment, if the distance between two shapes is less than a predetermined threshold, those shapes may cause a mask layer condition. Shapes may be grouped to facilitate mask layer condition detection and mask layer assignment.

Abstract: Methods for patterning integrated circuit (IC) features with varying dimensions are provided. In an example, a method includes forming a first patterned radiation-sensitive resist layer over a device substrate using a first mask, wherein the first patterned radiation-sensitive resist layer includes a first portion of an IC pattern; using the patterned first radiation-sensitive resist layer as a mask to form the first portion of the IC pattern in the device substrate; forming a second patterned radiation-sensitive resist layer over the device substrate using a second mask, wherein the second patterned radiation-sensitive resist layer includes a second portion of the IC pattern; and using the patterned second radiation-sensitive resist layer as a mask to form the second portion of the IC pattern in the device substrate. The combined first and second portions of the IC pattern in the device substrate form an IC feature having a dimension greater than dimensions of the first and second portions.

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.

Abstract: A semiconductor device, such as a PMOS transistor, having localized stressors is provided. Recesses are formed on opposing sides of gate electrodes such that the recesses are offset from the gate electrode by dummy spacers. The recesses are filled with a stress-inducing layer. The dummy recesses are removed and lightly-doped drains are formed. Thereafter, new spacers are formed and the stress-inducing layer is recessed. One or more additional implants may be performed to complete source/drain regions. In an embodiment, the PMOS transistor may be formed on the same substrate as one or more NMOS transistors. Dual etch stop layers may also be formed over the PMOS and/or the NMOS transistors.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. The first metallic layer is electrically coupled with the first source region. The first metallic layer and the first diffusion area overlap with a first distance. A second metallic layer is electrically coupled with the first drain region and the second drain region. The second metallic layer and the first diffusion area overlap with a second distance. The first distance is larger than the second distance.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: A transistor, such a MOSFET, having an epitaxially grown strain layer disposed over a channel region of a substrate for stressing the channel region to increase the carrier mobility in the channel, and method for making same. The strain layer is composed of a high dielectric constant material.

Abstract: Disclosed are a method, apparatus, and computer program product for performing interactive layout editing to address double patterning approaches to implement lithography of electronic designs. A spatial query is performed around the shape(s) being created during editing with the distance of allowed spacing in a single mask. If a design error is encountered, corrective editing may occur to correct the error. Checking may occur to make sure that the error detection and corrective actions can be performed interactively.

Abstract: A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.

Abstract: A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angstroms or less. The method for forming the semiconductor structure includes epitaxially forming the silicon-germanium layer and the single crystal silicon layer. The silicon-germanium layer is stressed upon formation. After the single crystal silicon layer is formed over the silicon-germanium layer, an RTA or laser heat treatment process selectively melts the silicon-germanium layer but not the single crystal silicon layer. The substantially molten silicon-germanium relaxes the compressive stresses in the silicon-germanium layer and yields a relaxed silicon-germanium layer and a strained single crystal silicon layer upon cooling.