Abstract: An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.

Abstract: Provided is a method of manufacturing an organic light emitting display device in which a laser beam is used. The method includes forming an organic light emitting unit on a substrate; forming a sealing unit that seals the organic light emitting unit; forming an protective film which is opaque on the sealing unit to protect the organic light emitting unit or the sealing unit by blocking the transmission of the laser beam; forming an optical pattern on the opaque protective film using the laser beam; and forming a transparent film from the opaque protective film by oxidizing the opaque protective film.

Abstract: An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

Abstract: An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

Abstract: An organic electroluminescent display (OLED) device having an anode electrode covered with a solution-coated ultra-thin polymer film (reforming layer) is disclosed. In one embodiment, an OLED device includes a substrate having a first anode electrode formed thereon. The first anode electrode is covered with an ultra-thin polymer film (reforming layer). An organic emission layer is formed over an upper surface of the reforming layer, and a second cathode electrode is formed over the organic emission layer. The reforming layer is made of a material selected from a general polymer that is a soluble polymer, a heat resistant polymer, and a fluorine-based polymer having one or more functional groups. The solution coating methods which may be used to apply the reforming layer include a spin coating method, a doctor blade method, a dip coating method, a roll coating method, a spray coating method, and an ink jet method.

Abstract: The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

Abstract: An electrophoretic display apparatus includes a first substrate including a thin film transistor, a second substrate attached to the first substrate and including electrophoretic particles and an electrophoretic dispersion medium, and a third substrate attached to the second substrate and including a color filter.

Abstract: An organic light emitting display apparatus capable of preventing or reducing an IR drop and a decrease in a contrast ratio, and a method of manufacturing the same. The organic light emitting display apparatus includes: a substrate; a plurality of thin film transistors on the substrate; a plurality of organic light emitting diodes, each of the organic light emitting diodes including: a pixel electrode electrically connected to a corresponding one of the thin film transistors, a portion of an opposite electrode, the opposite electrode being above the substrate and covering all of the substrate, and an intermediate layer between the pixel electrode and the opposite electrode and comprising at least an organic light emitting layer; an opposite electrode bus line between adjacent pixel electrodes of the organic light emitting diodes on the opposite electrode of the organic light emitting diodes; and a black matrix surrounding the opposite electrode bus line.

Abstract: An organic EL device in which light-emitting efficiency, color purity and laser induced thermal imaging characteristics are improved by providing with an organic EL device comprising a first electrode, a hole transport layer, a light-emitting layer, and a second electrode, wherein the light-emitting layer uses a mixture of an optically active low molecular electric charge transport material and a high molecular light-emitting substance.

Abstract: An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

Abstract: A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

Abstract: A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

Abstract: An organic thin film transistor and a flat panel display device using the same are disclosed. The organic thin film transistor includes an inorganic layer doped with an impurity in a region of the outer surfaces of source and drain electrodes, or the source and drain electrodes is formed by an inorganic material doped with an impurity. According to the organic thin film transistor, an energy barrier is generated when contact between the organic semiconductor and the source and drain electrodes is removed to form an ohmic contact.

Abstract: An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed.

Abstract: A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

Abstract: The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed.

Abstract: An electroluminescent display device is disclosed. The device includes electroluminescent transistors which function as both signal switches and as electroluminescent light sources for the display pixels.

Abstract: Provided is an organic light emitting display apparatus in which process efficiency and contrast are increased. The organic light emitting display apparatus includes a substrate, a display unit that is formed on the substrate and includes an organic light emitting device, an encapsulation layer that is formed on the display unit so as to encapsulate the display unit, a color filter layer that is formed on the encapsulation layer, a protection layer that is formed on the color filter layer, and a black matrix that is formed on the protection layer. The black matrix is aligned not to overlap the color filter layer.