Abstract: An electrode for a secondary battery includes: an electrode current collector; and an electrode mixture layer formed on at least one surface of the electrode current collector. Based on a region corresponding to 50% of a thickness of the electrode mixture layer in a direction in which the electrode mixture layer is formed from a surface of the electrode current collector, a ratio (B/A) of cohesive force (A) between an electrode active material and a binder or between adjacent binders included in a lower region, and cohesive force (B) between an electrode active material and a binder or between adjacent binders included in an upper region is less than 1.5.

Abstract: A hot water tank for a bidet includes a tank main body in which a space for accommodating water is formed and an inclined surface having a portion of an upper side inclined downward is formed. The hot water tank also includes a heating unit inserted into and positioned in the tank main body and a bimetal positioned on the inclined surface.

Abstract: An anode for a non-aqueous electrolyte secondary battery includes: an anode current collector; and an anode mixture layer formed on the anode current collector, containing an anode active material, a conductor, a rubber-based binder, and a water-soluble polymer-based binder. The anode mixture layer comprises, relative to a total weight thereof, 1.0-2.5 wt % of the rubber-based binder and 0.5-1.5 wt % of the water-soluble polymer based binder. When the anode mixture layer is divided into ten equal parts in the thickness direction based on the current collector, a ratio (CA/CB) at an interval of 0 to 3 of a content ratio (CA) of the rubber-based binder to a total content of the rubber-based binder to a content ratio (Cu) of the water-soluble polymer-based binder to a total content of the water-soluble polymer-based binder is larger than 1.0, and a ratio (CA/CB) at an interval of 7 to 10 is smaller than 1.0.

Abstract: The present invention relates to a nickel-based superalloy for diffusion bonding, which includes a surface depletion layer in a state in which an aluminum (Al) or titanium (Ti) content is depleted, the surface depletion layer being formed to a depth of 50 ?m or less from a surface for diffusion bonding, and a method for diffusion bonding using the same.

Abstract: The present invention relates to a pharmaceutical composition for diagnosing and treating prostate cancer, capable of targeting PSMA, and a compound provided by one aspect of the present invention has a glutamine-urea-lysine compound to which a radioactive metal-coupled chelator is structurally coupled and to which an aryl group that can additionally bind to PSMA protein is coupled. Coupling between the glutamine-urea-lysine compound and the chelator includes a polar spacer so as to serve the role of reducing in vivo nonspecific coupling and exhibit an effect of being rapidly removed from vital organs, but not from prostate cancer. These characteristics lower the radiation exposure, which is caused by a therapeutic radioisotope-coupled compound, to normal tissue and organs, and thus reduce side effects. In addition, a compound that contains a phenyl group having a coupling force with albumin has an increased residence time in the blood, thereby becoming more accumulated in prostate cancer.

Abstract: A flexible circuit board includes a substrate a, a wiring pattern layer provided on the first surface of the substrate, a plating layer provided on the wiring pattern layer and including an open area, and a protective layer that contacts parts of the wiring pattern layer, the plating layer, and the substrate. The protective layer has a larger thickness than a thickness of the plating layer. The first protective layer includes a first overlapping region in which the plating layer and protective layer are in contact with each and a second overlapping region in which the plating layer and the protective layer are in contact with each other. A width of the first overlapping region may be different from a width of the second overlapping region, and each of the widths of the first and second overlapping regions is larger than a thickness of the plating layer.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Abstract: The present invention relates to an 18F-labelled compound, and a use thereof. The compound selectively binds to a prostate-specific membrane antigen (PSMA), and enables the acquisition of clear prostate cancer images in a short time when used in positron emission tomography (PET).

Abstract: The present invention relates to an 18F-labelled compound, and a use thereof. The compound selectively binds to a prostate-specific membrane antigen (PSMA), and enables the acquisition of clear prostate cancer images in a short time when used in positron emission tomography (PET).

Abstract: A clutch and a compressor including the same, and may include a hub fastened to a rotary shaft of a compressor and rotatable with the rotary shaft in a state where its position has been fixed, a disk fastened to the hub and rotatable with the hub, a pulley rotated by receiving power from a driving source of the compressor, an elastic member fastening the hub and the disk, fastening the hub and the disk so that the disk approaches or is away from the pulley based on the hub, a field coil assembly magnetized when power is applied to contact or space the disk and the pulley, an attenuation member interposed between the elastic member and the disk, thereby reducing the noise and vibration due to the contact and spacing between the disk and the pulley by the elastic member and the attenuation member.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: A flexible circuit board and an electronic device including a flexible circuit board are provided. The flexible circuit board may include a substrate having a bending area and a non-bending area, a wiring pattern layer provided on the bending area and the non-bending area, a plating layer provided on the wiring pattern layer and including an open area in an area corresponding to the bending area, and a protective layer that directly contacts one surface of the wiring pattern layer exposed at the open area and a side surface of the plating layer. The protective layer may have a larger thickness than a thickness of the plating layer.