Abstract: Provided are a novel compound, in which a bombesin derivative known as having selectivity with respect to prostate cancer bonds with a ligand via aminomethyl galacturonic acid, a complex compound that covalently bonds with a radioactive isotope via the ligand of the novel compound, methods of preparing the compounds, and a nuclear-based molecular imaging agent including the complex compound.

Abstract: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit.

Abstract: A gas reactor device includes a plurality of microcavities or microchannels defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavities or microchannels to stimulate plasma generation therein upon application of suitable voltage. One or more or all of the electrodes are encapsulated within the thick metal oxide layer. A gas inlet is configured to receive feedstock gas into the plurality of microcavities or microchannels. An outlet is configured to outlet reactor product from the plurality of microcavities or microchannels. In an example preferred device, the feedstock gas is air or O2 and is converted by the plasma into ozone (O3). In another preferred device, the feedstock gas is an unwanted gas to be decomposed into a desired form. Gas reactor devices of the invention can, for example, decompose gases such as CO2, CH4, or NOx.

Abstract: A semiconductor device, including a substrate; a first conductive type well and a second conductive type body region at an upper portion of the substrate; a field plate on the first conductive type well, the field plate including a semiconductor material or an insulative nitride; and a gate electrode extending in a lateral direction on the substrate from a lateral portion of the second conductive type body region to a lateral portion of the first conductive type well, the gate electrode overlapping the field plate.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A preferred modular microplasma microchannel reactor device includes a microchannel array arranged with respect to electrodes for generation of plasma and isolated by dielectric from the electrodes. A cover covers a central portion of the microchannel array, while leaving end portions of the microchannel array exposed. A gas inlet and product outlet are arranged to permit flow into, through and out of the microchannel array. Reactor modules of the invention include pluralities of the modular reactor devices. The reactors devices can be arranged by a housing or a frame to be in fluid communication. A system of the invention arranges pluralities of modules. Preferred module housings, frames and reactors include structural features to create alignments and connections. Preferred modules include fans to circulate feedstock and reaction product. Other reactor devices provide plasma actuation for flow.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.

Abstract: A preferred modular microplasma microchannel reactor device includes a microchannel array arranged with respect to electrodes for generation of plasma and isolated by dielectric from the electrodes. A cover covers a central portion of the microchannel array, while leaving end portions of the microchannel array exposed. A gas inlet and product outlet are arranged to permit flow into, through and out of the microchannel array. Reactor modules of the invention include pluralities of the modular reactor devices. The reactors devices can be arranged by a housing or a frame to be in fluid communication. A system of the invention arranges pluralities of modules. Preferred module housings, frames and reactors include structural features to create alignments and connections. Preferred modules include fans to circulate feedstock and reaction product. Other reactor devices provide plasma actuation for flow.

Abstract: A piezoelectric element layer is further formed as a package material of a secondary battery, so that the secondary battery can be self-charged using a voltage generated in the piezoelectric element layer according to vibration generated in an electronic device and vibration generated by movement of the electronic device itself. The secondary battery includes a battery case that accommodates an electrode assembly, the battery case having an outer coating layer and a piezoelectric element layer formed on an inner surface of the outer coating layer, and a protection circuit module mounted to an outside of the battery case and electrically connected to the electrode assembly. In the secondary battery, a voltage storage is provided to the protection circuit module, and the piezoelectric element layer converts absorbed vibration into voltage and then stores the voltage in the voltage storage so that the secondary battery is self-charged as occasion demands.

Abstract: A semiconductor device comprising a substrate in which a first region and a second region are defined, a gate line which extends in a first direction and traverses the first region and the second region, a source region including a portion formed in the first region, a first part of a body region which is formed under the portion of the source region in the first region and has a first width, a first well which is formed under the first part of the body region in the first region and has a second width greater than the first width, a second part of the body region which is formed in the second region and has a third width, and a second well which is formed under the second part of the body region in the second region and has a fourth width smaller than the third width.

Abstract: A gas reactor device includes a plurality of microcavities or microchannels defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavities or microchannels to stimulate plasma generation therein upon application of suitable voltage. One or more or all of the electrodes are encapsulated within the thick metal oxide layer. A gas inlet is configured to receive feedstock gas into the plurality of microcavities or microchannels. An outlet is configured to outlet reactor product from the plurality of microcavities or microchannels. In an example preferred device, the feedstock gas is air or O2 and is converted by the plasma into ozone (O3). In another preferred device, the feedstock gas is an unwanted gas to be decomposed into a desired form. Gas reactor devices of the invention can, for example, decompose gases such as CO2, CH4, or NOR.

Abstract: Method for detecting target nucleic acids by simultaneous isothermal amplification of the target nucleic acids and a signal probe 5 using an external primer set, a DNA-RNA-DNA hybrid primer set and a DNA-RNA-DNA hybrid signal probe. The method can be used to amplify target nucleic acids in a sample, rapid and exact manner without the risk of contamination compared to the conventional methods such as PCR, and it can simultaneously amplify target nucleic acid and a signal probe, so that it can be applied to various genome projects, detection and identification of a pathogen, detection of gene modification producing a predetermined phenotype, detection of hereditary diseases or determination of sensibility to diseases, and estimation of gene expression. Thus, the method is useful for molecular biological studies and disease diagnosis.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Abstract: A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.

Abstract: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit.

Abstract: A semiconductor device comprising a substrate in which a first region and a second region are defined, a gate line which extends in a first direction and traverses the first region and the second region, a source region including a portion formed in the first region, a first part of a body region which is formed under the portion of the source region in the first region and has a first width, a first well which is formed under the first part of the body region in the first region and has a second width greater than the first width, a second part of the body region which is formed in the second region and has a third width, and a second well which is formed under the second part of the body region in the second region and has a fourth width smaller than the third width.

Abstract: A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.