Abstract: Embodiments are generally directed to methods and apparatuses for determining a frontal body orientation. An embodiment of a method for determining a three-dimensional (3D) orientation of frontal body of a player comprises: detecting each of a plurality of players in each of a plurality of frames captured by a plurality of cameras; for each of the plurality of cameras, tracking each of the plurality of players between continuous frames captured by the camera; and associating the plurality of frames captured by the plurality of cameras to generate the 3D orientation of each of the plurality of players.

Abstract: A photoresist, a photoresist composition, a method for patterning a photoresist and a method for preparing a printed circuit board are disclosed in the present application. The photoresist includes an organic solvent and titanium zirconium oxide nanoparticles. The general molecular formula of the titanium zirconium oxide nanoparticles is TixZryOzLn, wherein x, y and z are each independently an integer in a range from 1 to 6, n is an integer in a range from 5 to 30, and L is an organic ligand including a free-radical polymerizable group.

Abstract: Provided is a three-dimensionally stacked field-effect transistor (3DSFET) device which includes: a lower source/drain region of a 1st polarity type connected to a lower channel structure; an upper source/drain region of a 2nd polarity type, connected to an upper channel structure, above the lower source/drain region; and a PN junction structure, between the lower source/drain region and the upper source/drain region, configured to electrically isolate the upper source/drain region from the lower source/drain region, wherein the PN junction structure includes a 1st region of the 1st polarity type and a 2nd region of the 2nd polarity type.

Abstract: Provided is a three-dimensionally stacked field-effect transistor (3DSFET) device which includes: a 1st lower source/drain region and a 2nd lower source/drain region connected to each other through a 1st lower channel structure controlled by a 1st gate structure; and a 1st upper source/drain region and a 2nd upper source/drain regions, respectively above the 1st lower source/drain region and the 2nd lower source/drain region, and connected to each other through a 1st upper channel structure controlled by the 1st gate structure, wherein the 2nd lower source/drain region and the 2nd upper source/drain region form a PN junction therebetween.

Abstract: A detection circuit adaptable to a fingerprint detection system includes an integrating amplifier coupled to receive a photo-detected voltage from a sensor panel and configured to generate time integral of the photo-detected voltage, thereby resulting in a time-integral signal; and an analog-to-digital converter (ADC) that converts the time-integral signal into a digital form. A first common-mode voltage of the sensor panel is coupled to the integrating amplifier to prevent noise occurred in the first common-mode voltage from affecting the time-integral signal.

Abstract: A low power consumption boost circuit for providing high driving voltage of a touch circuit is provided. The low power consumption boost circuit includes a charge pump circuit, two digital-to-analog converters (DACs), and a switch circuit. The charge pump circuit receives a system voltage and correspondingly outputs a positive output voltage twice the system voltage and a negative output voltage with opposite polarity as the system voltage. One of the DACs receives the positive output voltage from the charge pump circuit as supply voltage, and the other DAC receives the negative output voltage from the charge pump circuit as supply voltage. The switch circuit is connected between the DACs and the touch circuit. The DACs are connected between the charge pump circuit and the switch circuit. The DACs are alternately connected to the touch circuit by controlling the switch circuit, thereby driving the touch circuit alternately.

Abstract: The fingerprint sensing circuit includes pixel sensors with photo sensors. Sensing currents produced by first pixel sensors are averaged. The average current is subtracted from sensing current produced by second pixel sensors to generate a difference current. During a capture period, a converting circuit outputs a digital signal in response to the difference current. This circuit aims to reduce noise in fingerprint recognition technology.

Abstract: A touch event processing circuit includes receiving circuits and an average circuit. Each of the receiving circuits includes an operation amplifier, a current processing circuit, and a touch event detection circuit. The operation amplifier receives an input signal from a touch panel, and outputs a first current signal and a second current signal. The current processing circuit processes the first current signal and the second current signal according to a first current average signal and a second current average signal, to generate a processed current signal. The touch event detection circuit detects a touch event according to the processed current signal. The average circuit receives first current signals and second current signals from the receiving circuits; performs an average operation upon the first current signals, to generate the first current average signal; and performs an average operation upon the second current signals, to generate the second current average signal.

Abstract: Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.

Abstract: A method and electronic device are provided. The electronic device includes a first dielectric layer; a metal patterned in the first dielectric layer; a second dielectric layer deposited on the first dielectric layer; and a metal via deposited in a channel in the second dielectric layer, the metal via being in contact with the patterned metal in the first dielectric layer. The channel is formed by removing at least a portion of a nanowall formed on the metal in the first dielectric layer.

Abstract: A gas oven with stations under parallel or synchronous control includes a plurality of temperature sensors, a controller and a plurality of processing stations. An air intake device includes a throttle valve, a gas transmission pipeline and a main gas valve. The throttle valve includes a combined gas control unit and a gas valve controller. The air intake device further includes an external gas supply source, and the gas supply source is connected to the gas transmission pipeline and a bakeware. The main gas valve and the throttle valve are separately arranged on the main gas transmission pipeline. The plurality of processing stations are provided with a plurality of gas sub-transmission pipelines and throttle valve gas main transmission pipelines, respectively. The gas oven further includes a communication module connected to a remote control to control the oven by way of a remote terminal or a mobile phone app.

Abstract: A display device includes an active matrix substrate and a detection circuit. The active matrix substrate has pixels that are configured to display an image. The pixels include display and photo sensing pixels each including a display region and a photo sensing region. The display region is configured to emit light with a predetermined emitting frequency in a blank period of the display device. The photo sensing region is adjacent to the display region, and is configured to detect the light emitted by the display region and reflected from a biometric object and to convert the reflected light into photo detection signals. The detection circuit is coupled to the photo sensing circuit of each of the display and photo sensing pixels, and is configured to construct a biometric pattern corresponding to the biometric object based on the photo detection signals.

Abstract: An outer ring (26) for a bearing assembly includes an annular backing member (54) having a body, and an annular race member (50). The body has a first portion defining a radial inner surface (98) and a radial outer surface, and a second portion defining an axially-facing base surface (110) and a radially-facing end surface (118). The annular race member has a radial outer face (58) and a radial inner face, and a first axial end face and a second axial end face (70) that both extend between the radial outer face and the radial inner face. The annular backing member is in press-fit engagement with the annular race member such that the radial outer face of the annular race member engages the radial inner surface of the annular backing member and the second axial end face of the annular race member engages the axially-facing base surface of the annular backing member such that the members are unitized.

Abstract: A method and electronic device are provided. The method includes patterning a metal in a first dielectric layer, depositing a first metal layer over the patterned metal, forming a nanowall under the first metal layer such that the nanowall is in contact with the patterned metal in the first dielectric layer, depositing a second dielectric layer on the first dielectric layer, removing at least a portion of the nanowall, thereby forming a channel in the second dielectric layer, and depositing a metal via in the channel such that the metal via is in contact with the patterned metal in the first dielectric layer.

Abstract: A control method of stepwise and stepless linear adjustment of a gas oven includes step 1: obtaining the setting temperature of the gas oven; step 2: obtaining the temperature inside the gas oven; step 3: determining the low temperature threshold, high temperature threshold and preset flame level according to the setting temperature, wherein the high temperature threshold is greater than the low temperature threshold; step 4: ensuring the temperature inside the gas oven is between the low temperature threshold and the high temperature threshold; step 5: if it exceeds, determining the change trend of the temperature inside the gas oven; step 6: when the change trend of the temperature inside the gas oven rises or falls, adjusting the flame level of the gas oven to the preset flame level.

Abstract: Methods of forming transistor devices are provided. A method of forming a transistor device includes providing a nanosheet stack that includes a plurality of nanosheets on a substrate. A sacrificial layer is between the nanosheet stack and the substrate. The method includes removing the sacrificial layer to form an opening between the nanosheet stack and the substrate. The method includes forming a gate spacer and an isolation region by forming an insulating material on the nanosheet stack and in the opening, respectively. Related transistor devices are also provided.

Abstract: Integrated circuit devices and methods of forming the integrated circuit device are provided. The methods may include providing a preliminary transistor stack including an upper sacrificial layer on a substrate, an upper active region between the substrate and the upper sacrificial layer, a lower sacrificial layer between the substrate and the upper active region, and a lower active region between the substrate and the lower sacrificial layer. The methods may further include forming lower source/drain regions on respective opposing side surfaces of the lower active region, forming a preliminary capping layer on a first lower source/drain region of the lower source/drain regions, the preliminary capping layer including a semiconductor material, converting the preliminary capping layer to a capping layer that includes an insulating material, and forming upper source/drain regions on respective opposing side surfaces of the upper active region.

Abstract: Methods of forming nanoceramic materials and components. The methods may include performing atomic layer deposition to form a plurality of nanoparticles, including forming a thin film coating over core particles, or sintering the nanoparticles in a mold. The nanoparticles can include a first material selected from a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride or combinations thereof.

Abstract: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier) is selectively applied to a bottom surface of the via. A liner layer (e.g., manganese (MN) or aluminum (AL)) is then applied to a set of sidewalls of the via. The via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).