Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: The present invention discloses a simple house structure that includes a framework, a floorslab, a wallboard and a shingle, and the framework includes a pedestal coupled to each first vertical rod, a first corner pillar, a first edge pillar and a first center connector disposed at different positions of each first vertical rod, and a second vertical rod connected to each first corner pillar, edge pillar and center connector, and each second vertical rod includes a second corner pillar, a second edge pillar, and a second center connector disposed at different positions of each second vertical rod, and a transversal rod installed between each connectors, and a diagonal rod installed between each transversal rod and first and second vertical rods, such that the house structure can have a better strength and achieve the effects of quick installation and dismantling.