Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

Abstract: According to one embodiment, a nonvolatile memory device includes: a magnetic memory element and a control unit. The magnetic memory element includes a stacked body, and a first and a second stacked units. The first stacked unit includes a first and second ferromagnetic layers and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer and a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer. The control unit is configured to implement a first operation of setting the magnetic memory element to be in a first state. The first operation includes a first preliminary operation of applying a first pulse voltage; and a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation.

Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.

Abstract: According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of ? ? ? H > ( H u + H dx ) ? ( H u + H dx - H ext ) ( H u + H dx + H ext ) .

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.

Abstract: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

Abstract: According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.

Abstract: A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.

Abstract: A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2 ? AB < L 0 ? 6.7 .

Abstract: According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

Abstract: According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

Abstract: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.

Abstract: According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.

Abstract: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.

Abstract: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.

Abstract: A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.

Abstract: A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.