Patents by Inventor Minoru Amano
Minoru Amano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090080239Abstract: A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.Type: ApplicationFiled: September 18, 2008Publication date: March 26, 2009Inventors: Toshihiko Nagase, Katsuya Nishiyama, Tadashi Kai, Masahiko Nakayama, Makoto Nagamine, Minoru Amano, Masatoshi Yoshikawa, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20080144233Abstract: A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon.Type: ApplicationFiled: February 14, 2008Publication date: June 19, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Minoru Amano, Yoshiaki Saito
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Patent number: 7359163Abstract: A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon.Type: GrantFiled: July 7, 2004Date of Patent: April 15, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Yoshiaki Saito
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Patent number: 7355824Abstract: The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.Type: GrantFiled: November 1, 2004Date of Patent: April 8, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Katsuya Nishiyama, Yoshiaki Saito, Minoru Amano
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Patent number: 7333359Abstract: A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.Type: GrantFiled: April 22, 2003Date of Patent: February 19, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Asao, Yoshihisa Iwata, Yoshiaki Saito, Hiroaki Yoda, Tomomasa Ueda, Minoru Amano, Shigeki Takahashi, Tatsuya Kishi
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Patent number: 7291506Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.Type: GrantFiled: July 1, 2005Date of Patent: November 6, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Kentaro Nakajima, Minoru Amano, Tomomasa Ueda, Shigeki Takahashi
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Patent number: 7266011Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.Type: GrantFiled: March 7, 2006Date of Patent: September 4, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Tatsuya Kishi, Sumio Ikegawa, Yoshiaki Saito, Hiroaki Yoda
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Patent number: 7247506Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.Type: GrantFiled: March 27, 2006Date of Patent: July 24, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Tatsuya Kishi, Yoshiaki Saito, Tomomasa Ueda, Hiroaki Yoda
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Patent number: 7245464Abstract: A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.Type: GrantFiled: March 3, 2005Date of Patent: July 17, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuya Kishi, Yoshiaki Saito, Minoru Amano, Shigeki Takahashi, Katsuya Nishiyama
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Patent number: 7140096Abstract: A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.Type: GrantFiled: July 25, 2003Date of Patent: November 28, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuya Kishi, Shigeki Takahashi, Kentaro Nakajima, Minoru Amano, Masayuki Sagoi, Yoshiaki Saito
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Publication number: 20060163196Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.Type: ApplicationFiled: March 27, 2006Publication date: July 27, 2006Applicant: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Tatsuya Kishi, Yoshiaki Saito, Tomomasa Ueda, Hiroaki Yoda
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Publication number: 20060146599Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.Type: ApplicationFiled: March 7, 2006Publication date: July 6, 2006Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Minoru Amano, Tatsuya Kishi, Sumino Ikegawa, Yoshiaki Saito, Hiroaki Yoda
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Patent number: 7054187Abstract: A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.Type: GrantFiled: November 5, 2004Date of Patent: May 30, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuya Kishi, Minoru Amano, Yoshiaki Saito, Shigeki Takahashi, Katsuya Nishiyama, Yoshiaki Asao, Hiroaki Yoda, Tomomasa Ueda, Yoshihisa Iwata
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Patent number: 7041603Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.Type: GrantFiled: March 26, 2003Date of Patent: May 9, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Tatsuya Kishi, Yoshiaki Saito, Tomomasa Ueda, Hiroaki Yoda
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Patent number: 7038939Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.Type: GrantFiled: October 30, 2003Date of Patent: May 2, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Minoru Amano, Tatsuya Kishi, Sumio Ikegawa, Yoshiaki Saito, Hiroaki Yoda
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Patent number: 7023725Abstract: There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.Type: GrantFiled: June 10, 2004Date of Patent: April 4, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Tomomasa Ueda, Tatsuya Kishi, Minoru Amano
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Patent number: 6995962Abstract: There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.Type: GrantFiled: October 20, 2004Date of Patent: February 7, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Saito, Masayuki Sagoi, Minoru Amano, Kentaro Nakajima, Shigeki Takahashi, Tatsuya Kishi
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Publication number: 20050274984Abstract: A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.Type: ApplicationFiled: June 15, 2005Publication date: December 15, 2005Inventors: Keiji Hosotani, Yoshiaki Asao, Yoshiaki Saito, Minoru Amano, Shigeki Takahashi, Tatsuya Kishi, Yoshihisa Iwata
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Publication number: 20050254289Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.Type: ApplicationFiled: July 1, 2005Publication date: November 17, 2005Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kentaro Nakajima, Minoru Amano, Tomomasa Ueda, Shigeki Takahashi
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Patent number: 6965138Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.Type: GrantFiled: November 7, 2003Date of Patent: November 15, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Kentaro Nakajima, Minoru Amano, Tomomasa Ueda, Shigeki Takahashi