Abstract: A lithium ion secondary cell comprises a plurality of single cells composed of a collector comprising positive electrodes composed of a metallic material coated with a positive electrode active substance; negative electrodes composed of a metallic material coated with a negative electrode active substance; separators interposed between the positive and negative electrodes; lugs of the metallic materials where the active substance is not coated; and conductors adapted to bunch and clamp the lugs of the positive and negative electrodes separately, the positive and negative electrodes being assembled in laminate alternatively, and the ends of the lugs of the positive and negative electrodes being welded to the respective conductors separately so that electric current can be taken out through the conductors.

Abstract: A ceramic article such as a sanitary pottery ware is produced by slip casting using a porous composite mold. A green ceramic body of a part such as a trap of sanitary ware is separately formed in advance by, for example, slip casting. The green ceramic body is placed in the mold cavity of the porous composite mold. Then, a slip as the material of the main part of the sanitary ware is supplied into the mold cavity to form deposit integral with the green ceramic body, whereby an integral sanitary ware is obtained by slip casting.

Abstract: There is disclosed a method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under predetermined ambient conditions in the chamber. The method includes the steps of: mounting a target, which is formed of a backing plate and a target plate directly connected to the backing plate, on the cathode assembly, the backing plate having a heat conductivity greater than that of the target plate; heating the target at a predetermined temperature at which residual gases absorbed on the target plate are removed therefrom; and activating the cathode assembly so that the target plate is sputtered. The target can also be formed of a backing plate, a spacer directly connected to the backing plate, and a target plate directly connected to the spacer, the spacer having a melting point greater than that of the target plate.

Abstract: A coating composition, a coated inorganic hardened product having a cured layer formed from the coating composition, and a process for producing the coated hardened product.A coating composition comprising the following components (A) to (C);(A) an organosilane oligomer solution containing silica particles dispersed therein, said solution being obtained by partially hydrolyzing a hydrolyzable organosilane represented by the formulaR.sup.1.sub.n SiX.sub.4-n (I)wherein R.sup.1 which may be the same or different each represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms, n is an integer of from 0 to 3, and X represents a hydrolyzable group, in a colloidal silica dispersed in an organic solvent or water,(B) a polyorganosiloxane having a silanol group in the molecule thereof, represented by the average composition formulaR.sup.2.sub.a Si(OH).sub.b O.sub.(4-a-b)/2 (II)wherein R.sup.

Abstract: A coating composition, a coated inorganic hardened product having a cured layer formed from the coating composition, and a process for producing the coated hardened product.a coating composition comprising the following components (A) to (C);an organosilane oligomer solution containing silica particles dispersed therein, said solution being obtained by partially hydrolyzing a hydrolyzable organosilane represented by the formulaR.sup.1.sub.n SiX.sub.4-n (I)wherein R.sup.1 which may be the same or different each represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms, n is an integer of from 0 to 3, and X represents a hydrolyzable group, in a colloidal silica dispersed in an organic solvent or water,(B) a polyorganosiloxane having a silanol group in the molecule thereof, represented by the average composition formulaR.sup.2.sub.a Si(OH).sub.b O.sub.(4-a-b)/2 (II)wherein R.sup.

Abstract: A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole in an interlayer insulating film, and forming a metallic intermediate layer on an exposed surface portion of a first conductive interconnection layer and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.

Abstract: A method for forming a metal layer includes the steps of forming an insulation layer having at least one step portion on a wafer; and forming the metal layer over the insulation layer. The metal layer is formed by depositing aluminum-based alloy by sputtering while the wafer is heated to a temperature higher than a predetermined temperature. As a result, at the step portion, a good step coverage can be obtained and the surface of the metal layer can be planarized. At the same time, the method according to the present invention contributes to a prevention of deterioration in the quality of the layer and facilitates a process to be carried out at a later stage.

Abstract: A method for sputtering by a glow discharge in gas is disclosed. The sputtering chamber is evacuated by a pump with a high speed, and the flow rate of the gas injected into the chamber is varied periodically between a high flow rate and a low flow rate. During the high flow rate, the discharge is ignited. The glow discharge is sustained during the low flow rate injection period, and when the pressure becomes too low to maintain a stable discharge, the flow rate is again increased to ignite or reinforce the electric discharge. In such a manner, the flow rate of the injection gas is periodically alternated between a high and a low injection rate. The sputtering is mostly done at the lower injection rates, and the evacuation speed is kept always high. Accordingly, contamination otherwise caused by residual gas is prevented, and a high grade sputtered film is obtained.

Abstract: A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350.degree. to 550.degree. C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 .mu..OMEGA..cm.

Abstract: A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.

Abstract: This high temperature heating sputtering process comprises the steps of:providing a semiconductor substrate (10) and a target (5) of a wiring material positioned opposite to the semiconductor substrate (10) in a vacuum chamber (1);sputtering a heated gas through a first gas supply unit to heat the semiconductor substrate (10) and to cause an electric discharge of the heated gas ions by using an electric discharge,to cause said heated gas ions to collide with a surface of the target (5); anddepositing the target material from the surface of the target (5) onto the surface of the semiconductor substrate (10) by a sputtering process, wherein, the amount of heated gas supplied to the vacuum chamber (1) is decreased in accordance with an increase of a temperature of the semiconductor substrate (10), and simultaneously, supplying the same gas from a second gas supply means (4b) into the vacuum chamber (1) in the same amount as the decrease of gas from the first gas supply means so that the temperature of the semico

Abstract: A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, on which window plate the substrate is mounted. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, with result that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

Abstract: A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, and the substrate is mounted on the window plate. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, so that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

Abstract: A duct possessing structure includes an annular first floor and an annular first roof disposed substantially horizontally, vertical stationary guiding partitions provided radially between the first floor and roof, and a centrally located hollow cylindrical space. A revolving body includes a circular second floor and a circular second roof, and a pair of guide pillar members disposed between the second floor and roof. Each guide pillar member comprises a duct-blocking arcuate outer wall along the outer circumference of the second floor and roof, and a duct-forming curved inner wall connecting both side edges of the arcuate outer wall. The revolving body is disposed within the hollow cylindrical space of the duct possessing structure and is adapted for rotation about an axis coaxial with that of the center axis of the cylindrical space.

Abstract: A mode coupled tuning fork type quartz crystal vibrator utilizing two different vibrational modes is provided. The vibrator includes at least one electrode on each tuning fork arm for adjusting the resonant frequency of the main vibration and an electrode for adjusting the frequency-temperature characteristic of the vibrator. The main vibration is in the flexural mode (F.sub.1) and the sub-vibration is in the torsional mode (T.sub.0). The resonant frequency of the first overtone in the flextural mode is designated by f.sub.F and the resonant frequency of the fundamental vibration in the torsional mode is denoted by f.sub.T. The difference between f.sub.F and f.sub.T defined as .DELTA.f=f.sub.F -f.sub.T determines the frequency-temperature characteristics of the mode coupled vibrator.The electrodes for adjusting f.sub.F are substantially triangular in shape and the electrodes for adjusting f.sub.T are substantially rectangular in shape.

Abstract: A tuning fork type quartz crystal vibrator has electrodes formed on its surfaces with the electrodes being divided into separated portions along the length of the tuning fork arms such that opposite electric fields and charges are juxtaposed in the same arm. Dividing the electrode at a location along the tuning fork arms where strains induced during vibration reverse direction, enhances the ability to induce vibrations. A low resonant resistance and high capacity ratio are provided for an overtone frequency of flexual vibrations.

Abstract: Cutting a quartz tuning fork crystal vibrator at a preferred angle and with a thickness which establishes a close coupled relationship between the flexural and torsional modes of vibration of the arms or tines produces a vibrator having a highly favorable cubic frequency temperature characteristic at predetermined frequencies. Weight added to the ends of the vibrating tines reduces the frequency of both flexural and torsional vibration, whereas weight added at nodal points in the flexural vibration primarily reduces only the torsional vibrational mode. Accordingly, a wide range of frequency adjustments is possible. Deviations from the desired crystal operating frequency due to manufacturing variances are adjustable by sequential weight modifications while the desirable cubic temperature characteristic is retained. High accuracy over a wide temperature range permits operation in oscillator circuits at relatively low frequencies and with attendant low power consumption.

Abstract: An interior unit of a split type air-conditioning apparatus which is usually mounted on a wall of a room to be cooled and is extremely thin. The unit consists of a cabinet structure including a front panel, a middle frame and a rear plate, said front panel having an air inlet opening and an air outlet opening. Also included is a centrifugal fan, preferably a turbo fan with a plurality of backward curved blades, specially designed to adapt to the unit. The means for driving said fan are designed to be partly accommodated in the body of the turbo fan for the purpose of decreasing the depth of the unit.