Abstract: An anti-theft device is used with an attachment device used to attach a hubcap to a wheel of a vehicle or a rim to an axle of a vehicle. Such an attachment device may be a bolt or a nut. The anti-theft device has a receiving portion and a key portion. The receiving portion of the anti-theft device receives a head of the attachment device. The key portion has a key arrangement provided on thereon.

Abstract: Disclosed are an information embedding method and apparatus for embedding watermark data in programs and compressed data. The method includes generating encoded content by attaching an error correction code to content, and generating watermark-embedded encoded content by embedding watermark data in the encoded content that has been generated. The watermark data has such data length that the watermark data can be removed if decoding processing is executed using the error correction code. The original content can be obtained from the watermark-embedded encoded content by decoding processing based upon the error correction code that has been attached to the watermark-embedded encoded content.

Abstract: A micro-mirror for deflecting an incident light is disclosed, wherein the micro-mirror comprises: a mirror section for reflecting an incident light issued from a laser diode; a hinge section including a fixed section and a movable section each having a flat surface; and a drive section having a bi-morph structure made of two or more of materials having different heat expansion coefficient for deflecting said mirror section to change relative angle to said incident light.

Abstract: If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confirm as a whole that the alignment of a multiplicity of components disposed over a distance has been correctly adjusted. This problem is overcome by using a semiconductor light-receiving element with a structure which absorbs only some of a received laser light beam and which allows the greater part of the beam to be transmitted to its rear face.

Abstract: A key used for deciphering ciphertext is safely transmitted, to establish simple encryption communication. A transmitter and a receiver are connected through a network such that they can communicate with each other. In the transmitter, plaintext is enciphered using a common key. Ciphertext, together with a key generation program in a public-key cryptosystem, is transmitted from the transmitter to the receiver. In the receiver, a pair of a public key and a secret key is generated in accordance with the key generation program, the public key is transmitted to the transmitter, and the secret key is held in the receiver. In the transmitter, the common key is enciphered using the public key transmitted from the receiver. An enciphered common key transmitted to the receiver is deciphered using the held secret key. The ciphertext is deciphered using the deciphered common key.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: In a display apparatus, a switch circuit including transistors is turned off to isolate a scanning line driving circuit and scanning lines from each other, the output of the scanning line driving circuit is inspected by the output from a terminal of an inspection circuit for the scanning line driving circuit, and the switch circuit is turned on to supply the output of the scanning line driving circuit to the scanning lines to check for a disconnection or a shorting of any of the scanning lines in accordance with the presence or absence or the magnitude of the voltage change appearing across the scanning line inspection circuit.

Abstract: A liquid crystal display includes a matrix array of liquid crystal pixels, data lines formed along columns of the pixels, TFTs assigned to the pixels for causing the data lines to be electrically connected to the pixels of a selected row, and a data line driver which drives the data lines and has a first video bus for transmitting analog pixel signals of the positive polarity for the pixels of one of odd and even columns in a selected row, a second video bus for transmitting analog pixel signals of the negative polarity for the pixels of the other one of the odd and even columns in the selected row, sample-hold units each assigned to adjacent two of the data lines to simultaneously sample-hold the pixel signals on the first and second video buses, and a shift register circuit for enabling the operations of the sample-hold units sequentially.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: A plaintext file 41 is enciphered using a file key 44, to generate ciphertext 42. The file key 44 is enciphered using a secret key 47 and a management key 48, respectively, to form an enciphered key 1 (45) and an enciphered key 2 (46). An enciphered file 43 is produced from the ciphertext 42, the enciphered key 1 and the enciphered key 2. At the time of decryption, the enciphered key 1 is taken out from the enciphered file 43. The enciphered key 1 taken out is deciphered using a secret key 47, to obtain a file key 44. The ciphertext 42 is deciphered using the file key 44, to obtain the plaintext 41.

Abstract: An object of the present device is to precisely lock the output of electrical stimulation pulses onto diastolic periods.An electrical stimulator comprises a pulse sensor, a systolic period pulse producing unit for producing a systolic signal using the pulse wave sensor, a signal oscillator for electrical stimulation production, an electrical stimulation pulse output unit for outputting electrical stimulation pulses according to the output signal of the signal oscillator for electrical stimulation production, and a gate for controlling the connection between the signal oscillator for electrical stimulation production and the electrical stimulation pulse output unit according to the systolic signal supplied by the systolic period signal producing unit.

Abstract: An object of the present invention is to precisely lock the output of electrical stimulation pulses onto diastolic periods. An electrical stimulator comprises a pulse sensor, a systolic period pulse producing unit for producing a systolic signal using the pulse wave sensor, a signal oscillator for electrical stimulation production, an electrical stimulation pulse output unit for outputting electrical stimulation pulses according to the output signal of the signal oscillator for electrical stimulation production, and a gate for controlling the connection between the signal oscillator for electrical stimulation production and the electrical stimulation pulse output unit according to the systolic signal supplied by the systolic period signal producing unit.

Abstract: The present invention provides an electric thermal treatment device that uses no battery, has a compact design, enables satisfactory thermotherapy, and completes charging quickly. The electric thermal treatment device comprises a heating unit including a charge storage, a heater that generates heat using current discharged from the charge storage, and an attachment that attaches the device to the skin, and a power supply unit for supplying a charge to the charge storage in the heating unit. The heating unit is electrically coupled with the power supply unit to receive charge. After being decoupled from the power supply unit, the heating unit is attached to the skin of human body and generates heat.

Abstract: A DCT coefficient output from a DCT circuit 21 is quantized by different quantization outputs by quantization circuits 22 to 25, and code lengths obtained by encoding the respective quantization outputs are calculated by code length calculation circuits 28 to 31. The code lengths corresponding to one frame obtained by the code length calculation circuits 28 to 31 are accumulated by adders 33 to 36, thereby obtaining a plurality of calculated total bit counts corresponding to the plurality of quantization coefficients. A comparator 37, multipliers 38 and 39, and an adder 40 select, of the plurality of calculated total bit counts, two calculated total bit counts that are close to a target total bit count, and obtain a scale factor used for obtaining a quantization coefficient corresponding to the target total bit count. An optimum quantization coefficient for the subsequent second scanning operation is generated by a quantization coefficient generator 27 by using the scale factor.

Abstract: In a semiconductor integrated circuit device such as a memory chip, the number of wirings is increasing as the memory capacity and the like increase. In improving the reliability and obtaining high access speed of a common bus in which these wirings are arranged, wirings in a second layer and via holes at jumpers used for interference portions of signal wirings and power supply wirings in a congested region of a common bus have become an issue. Accordingly, in the present invention, it is made possible to form wirings in the second layer having wide width and a plurality of via holes per one connecting point, thus realizing a semiconductor integrated circuit which has high reliability and high access speed by arranging a mother power supply wiring branched to the common bus line along the vicinity of processing circuits of signal wirings arranged in the common bus.

Abstract: Drift values of exposure position of an electron beam are obtained through detection of a reference mark on a sample stage and a drift characteristic formula which expresses the exposure positions of the electron beam is corrected by using a plurality of the drift values. The electron beam is controlled to expose some lithographic pattern by estimating the exposure position in real time at which the electron beam is irradiated at the estimated exposure position based on the drift characteristic formula without detecting the reference mark, and further to expose other lithographic pattern by calculating the exposure position based on the drift characteristic formula by detecting the reference mark. The measuring of the drift which takes much time are partly taken place at few limitted positions and the correction of the exposure positions is effectively in a short time.

Abstract: The coffee maker of the present invention has a guiding gutter formed movably below a basket for containing ground coffee beans. In the first state, the guiding gutter guides coffee extract obtained from the basket directly into a cooling tank having a freezing section. In the second state, the guiding gutter let the coffee extract obtained from the basket fall into a pot situated below the basket.