Abstract: A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heating is provided by either shaping the window surface on the chamber side of the window or providing structurally floating features to block at least a portion of a conductive path from forming on the chamber side window surface. The shaping can produce contours that prevent current paths from being created in the forming metal film. In addition or in the alternative, texture on the chamber side surface of the window is provided to increase surface area and thereby reduce film thickness.

Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.

Abstract: An IPVD source assembly and method is provided for supplying and ionizing material for coating a semiconductor wafer. The assembly includes a process space containing a plasma and an electrostatic chuck moveable in to and out of the process space. The chuck is configured to support the semiconductor wafer. The assembly further includes a first shield in electrical communication with a table and a second shield. The first shield is configured to shield at least a portion of the electrostatic chuck when the chuck is in the process space and the second shield is configured to shield at least a portion of a space below the electrostatic chuck and the process space. A conducting element electrically connects the second shield to the table to substantially prevent a formation of a second plasma in the space below the electrostatic chuck and the process space.

Abstract: An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

Abstract: An RF antenna assembly is provided having a segmented, conductive, deposition baffle covering an antenna conductor designed for operation internal to a vacuum processing chamber in presence of metal vapor or ions. The antenna can be placed either above the wafer, or around it. The baffle includes two concentric layers of segmented shields. The inner segmented shield is a dielectric, and the outer segment shield is electrically conductive. The segments are preferably staggered and the dielectric layer is configured to occupy the space and maintain the distance between the conductor and the outer shield. The shield segments arranged end-to-end, with non-conductive, endless, circumferential gaps between the segments of the conductive outer layer.

Abstract: A plasma processing system and plasma monitor therefor is provided in which a plasma monitor housing is coupled to a plasma processing chamber such that a line-of-sight monitoring path extends through the housing to an optical sensor outside of a window. A separate reference signal path extends through the housing from a reference light source on one side of the housing to a reference optical sensor on the other side of the housing. The housing is configured so that deposits from the chamber affect all of the windows equally, and to retard the flow of contaminating film forming material onto the windows, using, for example, baffles, gas counterflow, and a balanced radial-leg housing. A processor uses the reference signal to determine window contamination and compensate for signal attenuation along the monitoring path caused by window coating, in the making of a measurement of plasma emissions. The measurement can be used by the processing system to control the plasma.

Abstract: A method and apparatus for treating a substrate in a processing system. The processing system includes a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate and heat the substrate, and a process gas delivery system coupled to the process chamber and configured to introduce a process gas to a process space above an upper surface of the substrate. Furthermore, the process chamber includes one or more apparatus surfaces in radiative communication with the upper surface of the substrate and having a low emissivity and/or high reflectivity.

Abstract: A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the process chamber and supports the substrate. The gas distribution system is coupled to the process chamber. The gas distribution system introduces a process gas to a process space above an upper surface of the substrate. The flow modulation element is coupled to the substrate holder beyond a peripheral edge of the substrate. The flow modulation element includes one or more gas distribution openings that introduce an additive process gas beyond the peripheral edge of the substrate in a direction substantially away from the substrate.

Abstract: An atomic layer deposition (ALD) module is provided with a rotatable carrier plate that holds a plurality of wafer holders at equally spaced angular positions. The plate is rotated to carry the wafers through a plurality of processing stations arranged at similarly equally spaced angular intervals around the axis of rotation of the rotatable plate. Rotation of the carrier plate carries a plurality of substrates successively through a plurality of pairs of stations, each pair including a precursor deposition station and a light activation station. A plurality of rotations may be used to apply a complete ALD film on the substrates. Wafers in different holders on the carrier are simultaneously processed in different stations, with some having precursor deposited thereon and others having the precursor thereon activated by light. One or more transfer stations can be included for loading or unloading wafers to and from the carrier. The number of holders on the carrier equals the number of stations in the module.

Abstract: A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heating is provided by either shaping the window surface on the chamber side of the window or providing structurally floating features to block at least a portion of a conductive path from forming on the chamber side window surface. The shaping can produce contours that prevent current paths from being created in the forming metal film. In addition or in the alternative, texture on the chamber side surface of the window is provided to increase surface area and thereby reduce film thickness.

Abstract: A plasma processing system and plasma monitor therefor is provided in which a plasma monitor housing is coupled to a plasma processing chamber such that a line-of-sight monitoring path extends through the housing to an optical sensor outside of a window. A separate reference signal path extends through the housing from a reference light source on one side of the housing to a reference optical sensor on the other side of the housing. The housing is configured so that deposits from the chamber affect all of the windows equally, and to retard the flow of contaminating film forming material onto the windows, using, for example, baffles, gas counterflow, and a balanced radial-leg housing. A processor uses the reference signal to determine window contamination and compensate for signal attenuation along the monitoring path caused by window coating, in the making of a measurement of plasma emissions. The measurement can be used by the processing system to control the plasma.

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: The present invention presents an improved apparatus and method for monitoring a material processing system, where the material processing system includes a processing tool, test signal source, and a filter/detector. The test signal source providing a first test signal and a second test signal to the processing chamber, and the filter/detector detecting an intermodulation product of the first test signal and the second test signal generated when a plasma is created.

Abstract: An RF antenna assembly is provided having a segmented, conductive, deposition baffle covering an antenna conductor designed for operation internal to a vacuum processing chamber in presence of metal vapor or ions. The antenna can be placed either above the wafer, or around it. The baffle includes two concentric layers of segmented shields. The inner segmented shield is a dielectric, and the outer segment shield is electrically conductive. The segments are preferably staggered and the dielectric layer is configured to occupy the space and maintain the distance between the conductor and the outer shield. The shield segments arranged end-to-end, with non-conductive, endless, circumferential gaps between the segments of the conductive outer layer.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.

Abstract: A system and method is provided for using an ionized physical vapor deposition (iPVD) source for uniform metal deposition having uniform plasma density at relatively low (5 mTorr) and relatively high (65 mTorr) operation. Magnet structure is combined with an inductively coupled plasma (ICP) source to shift the plasma toward the chamber periphery during low pressure operation to enhance uniformity, while plasma uniformity is promoted by randomization or thermalization of the plasma at higher pressures. Accordingly, uniformity is provided for both deposition and etching in combined sequential deposition-etch processes and for no-net-deposition (NND) and low-net-deposition (LND) deposition-etching processes.

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and may be a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: Improved measurement accuracy for determining the flow rate of precursor vapor to the deposition tool, particularly for use with low vapor pressure precursors, such as ruthenium carbonyl (Ru3(CO)12) or rhenium carbonyl (Re2(CO)10). In one embodiment, the system includes a differential pressure manometer is provided for measuring the flow rate. A method of measurement and calibration is also provided.

Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.