Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and may be a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: The present invention presents an improved apparatus and method for monitoring a material processing system, where the material processing system includes a processing tool, test signal source, and a filter/detector. The test signal source providing a first test signal and a second test signal to the processing chamber, and the filter/detector detecting an intermodulation product of the first test signal and the second test signal generated when a plasma is created.

Abstract: A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window and into the plasma. The RF electric field and the DC magnetic field are both in the plane of the dielectric window in what may be called a planar helicon configuration. Due to magnetic field effects, the electromagnetic wave excites an electron cyclotron wave that heats the electrons by mode conversion of the whistler wave a few centimeters from the dielectric window where a mode conversion relationship among characteristic antenna wavelength, generator frequency, magnetic field strength and plasma electron density is satisfied. The curvature of the magnetic field lines generates plasma flows that expel the plasma towards the processing space.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.

Abstract: A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window and into the plasma. The RF electric field and the DC magnetic field are both in the plane of the dielectric window in what may be called a planar helicon configuration. Due to magnetic field effects, the electromagnetic wave excites an electron cyclotron wave that heats the electrons by mode conversion of the whistler wave a few centimeters from the dielectric window where a mode conversion relationship among characteristic antenna wavelength, generator frequency, magnetic field strength and plasma electron density is satisfied The curvature of the magnetic field lines generates plasma flows that expel the plasma towards the processing space.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract: A cathode arrangement for physical vapor deposition onto substrates with high aspect ratio features for achieving high flat-field uniformity. The cathode arrangement includes two cathodes, a planar cathode and a conical cathode, where the conical cathode is truncated to provide an orifice in which the planar cathode is oriented. The angular distributions of sputtered atoms from the two cathodes complement one another to provide more uniform deposition.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from a magnetron sputtering target that is preferably annular. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy reactively coupled, preferably from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Chamber pressures are above 1 mTorr, typically in the 10-100 mTorr range, preferably between 10 and 20 mTorr. A magnetic bucket formed of an array of permanent magnets is positioned behind the inner surface of the chamber wall between the material source and the substrate.