Abstract: Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that includes a slot, a large number of external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central section and end sections of a bonding finger area along each longer side of the slot. The arrangement includes a first bonding finger array, which is located at a close distance from each longer side of the slot, and a second array, which is located at a farther distance than the distance of the first bonding finger array from each longer side of the slot. The central section of the bonding finger area includes the second bonding finger array, and the end sections of the bonding finger area include the first bonding finger array.

Abstract: A semiconductor package includes a semiconductor device including a plurality of signal pads and a plurality of auxiliary pads which are alternatively arranged in a predetermined direction, and a package board including a plurality of signal bond fingers, a plurality of first power supply voltage bond fingers, and a plurality of second power supply voltage bond fingers. The signal pads are connected respectively to the signal bond fingers by first wires. The first power supply voltage bond fingers and the second power supply voltage bond fingers are connected respectively to the auxiliary pads by second wires. The first wires are disposed between those of the second wires which are connected to the first power supply voltage bond fingers and those of the second wires which are connected to the second power supply voltage bond fingers.

Abstract: Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that includes a slot, a large number of external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central section and end sections of a bonding finger area along each longer side of the slot. The arrangement includes a first bonding finger array, which is located at a close distance from each longer side of the slot, and a second array, which is located at a farther distance than the distance of the first bonding finger array from each longer side of the slot. The central section of the bonding finger area includes the second bonding finger array, and the end sections of the bonding finger area include the first bonding finger array.

Abstract: An interposer to be mounted with an integrated circuit to be a test object is provided with a switch and a probe to detect an electric current corresponding to individual terminals of the integrated circuit. A test pattern signal is then inputted to the integrated circuit through a test substrate as a switch that is connected to a power supply terminal of the integrated circuit and that is turned off. If the integrated circuit normally operates and the current values of all the terminals of the integrated circuit are within a tolerance, the power supply terminal connected to the turned-off switch is identified as a terminal that may be removed.

Abstract: In a semiconductor device of the present invention, a second semiconductor chip is stacked on a first semiconductor chip having a plurality of bonding pads in its central region, with a bonding layer interposed therebetween. A plurality of wires respectively connected to the plurality of bonding pads of the first semiconductor chip are led out to the outside over a peripheral edge of the first semiconductor chip by passing through a space between the first and second semiconductor chips. A retaining member for retaining at least a subset of the plurality of wires is provided in a region on the first semiconductor chip including a middle point between the bonding pads and the peripheral edge of the first semiconductor chip by using a material different from the bonding layer so that the subset of the wires is positioned generally at a center of the spacing between the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor package includes a semiconductor device including a plurality of signal pads and a plurality of auxiliary pads which are alternatively arranged in a predetermined direction, and a package board including a plurality of signal bond fingers, a plurality of first power supply voltage bond fingers, and a plurality of second power supply voltage bond fingers. The signal pads are connected respectively to the signal bond fingers by first wires. The first power supply voltage bond fingers and the second power supply voltage bond fingers are connected respectively to the auxiliary pads by second wires. The first wires are disposed between those of the second wires which are connected to the first power supply voltage bond fingers and those of the second wires which are connected to the second power supply voltage bond fingers.

Abstract: A semiconductor device of the invention includes a first wiring layer including a signal wiring line formed therein, and a second wiring layer stacked on the first wiring layer and including a power-supply plane and/or ground plane formed therein, the power-supply plane or the ground plane is not formed at least within a part of the region of the second wiring layer facing the signal wiring line of the first wiring layer.

Abstract: A semiconductor device includes a first pad row and a second pad row, a first ground potential supply electrode which is connected to a first interconnect provided near the first pad row, and a second ground potential supply electrode which is connected to a second interconnect provided near the second pad row. The first pad row includes a first pad connected to the first circuit within the chip and connected to the first interconnect via a first bonding wire, and includes a second pad connected to a second circuit within the chip and connected to the second interconnect via a second bonding wire crossing over the second pad row.

Abstract: In a semiconductor device of the present invention, a second semiconductor chip is stacked on a first semiconductor chip having a plurality of bonding pads in its central region, with a bonding layer interposed therebetween. A plurality of wires respectively connected to the plurality of bonding pads of the first semiconductor chip are led out to the outside over a peripheral edge of the first semiconductor chip by passing through a space between the first and second semiconductor chips. A retaining member for retaining at least a subset of the plurality of wires is provided in a region on the first semiconductor chip including a middle point between the bonding pads and the peripheral edge of the first semiconductor chip by using a material different from the bonding layer so that the subset of the wires is positioned generally at a center of the spacing between the first semiconductor chip and the second semiconductor chip.

Abstract: Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that includes a slot, a large number of external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central section and end sections of a bonding finger area along each longer side of the slot. The arrangement includes a first bonding finger array, which is located at a close distance from each longer side of the slot, and a second array, which is located at a farther distance than the distance of the first bonding finger array from each longer side of the slot. The central section of the bonding finger area includes the second bonding finger array, and the end sections of the bonding finger area include the first bonding finger array.

Abstract: A device includes a substrate, a semiconductor chip, first and second pads, and a first wiring layer. The substrate includes first and second surfaces. The semiconductor chip includes third and fourth surfaces. The third surface faces toward the first surface. The first and second pads are provided on the third surface. The first and second pads are connected to each other. The first wiring layer is provided on the second surface of the substrate. The first wiring layer is connected to the first pad.

Abstract: A semiconductor device according to one embodiment has a wiring circuit board, a semiconductor chip, a die attach material and bumps. The semiconductor chip is mounted on the wiring circuit board. The die attach material is provided between the wiring circuit board and the semiconductor chip. A wiring layer is provided on one surface of the wiring circuit board. Leads are extended from the wiring layer and connected to the semiconductor chip. The bumps are provided at outer positions relative to the region where the semiconductor chip of the wiring circuit board is mounted. The wiring layer in the wiring circuit board is formed on the surface opposite from the surface on which the semiconductor chip is mounted.

Abstract: A device includes a substrate, a semiconductor chip, first and second pads, and a first wiring layer. The substrate includes first and second surfaces. The semiconductor chip includes third and fourth surfaces. The third surface faces toward the first surface. The first and second pads are provided on the third surface. The first and second pads are connected to each other. The first wiring layer is provided on the second surface of the substrate. The first wiring layer is connected to the first pad.

Abstract: A semiconductor device reduces the impedance of a wiring for supplying the circuit excluding a data output circuit with a power source voltage or a ground voltage and of speedup of data signal transmission in the data output circuit. Additional substrates 2a, 2b are on the upper surface of semiconductor chip 1. First additional wiring layer for power source 10d and first additional wiring layer for ground 10s formed on respective additional substrates 2a, 2b form prescribed conductive areas on semiconductor chip 1. First power source wiring 40C1d or first ground wiring 40C1s are interconnected through additional wiring layers 10d and 10s. Second power source wiring 40C2d and second ground wiring 40C2s, which is extended in the same direction as with DQ system signal wiring 40CDQ, forms a feedback current path. Second power source wiring 40C2d and second ground wiring 40C2s are disposed adjacent to DQ system signal wiring 40CDQ.

Abstract: A semiconductor device may include: first and second wiring boards separated from each other via a gap; a semiconductor chip; first and second groups of electrode pads; and first and second groups of connection pads. The semiconductor chip is fixed to upper surfaces of the first and second wiring boards, and has a first portion adjacent to the gap. The first and second groups of electrode pads are disposed on the first portion. The first and second groups of electrode pads are aligned adjacent to side surfaces of the first and second wiring boards, respectively. The side surfaces of the first and second wiring boards face each other. The first and second groups of connection pads are disposed on lower surfaces of the first and second wiring boards, respectively. The first and second groups of connection pads are aligned adjacent to the side surfaces of the first and second wiring boards, respectively.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: A semiconductor device has a semiconductor chip in which a plurality of semiconductor components and a plurality of pads are arranged, a plurality of external connection contacts arranged in grids, and a plurality of wires for electrically connecting the pads and the external connection contacts. The pads include a plurality of pad groups including a pair of electrode pads connected to the plurality of semiconductor components in common and a plurality of signal pads respectively connected to the semiconductor components connected to the electrode pads. In each pad group, each signal pad is arranged adjacently to one of the electrode pads; and each wire extending from each signal pad is extended along a wire extended from the electrode pad adjacent to each signal pad.

Abstract: A semiconductor device includes a pad for sense amplifier ground potential as an electrode pad supplying ground potential voltage to a sense amplifier, a first conductive line connected to the pad for sense amplifier ground potential, and a second conductive line connected to an electrode pad closest to the pad for sense amplifier ground potential among plural electrode pads included in a pad row. The second conductive line extends to the opposite side of the first conductive line with the pad row as a reference.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: A semiconductor device reduces the impedance of a wiring for supplying the circuit excluding a data output circuit with a power source voltage or a ground voltage and of speedup of data signal transmission in the data output circuit. Additional substrates 2a, 2b are on the upper surface of semiconductor chip 1. First additional wiring layer for power source 10d and first additional wiring layer for ground 10s formed on respective additional substrates 2a, 2b form prescribed conductive areas on semiconductor chip 1. First power source wiring 40C1d or first ground wiring 40C1s are interconnected through additional wiring layers 10d and 10s. Second power source wiring 40C2d and second ground wiring 40C2s, which is extended in the same direction as with DQ system signal wiring 40CDQ, forms a feedback current path. Second power source wiring 40C2d and second ground wiring 40C2s are disposed adjacent to DQ system signal wiring 40CDQ.