Abstract: A storage unit includes a plurality of storage devices that form a RAID group, that are coupled to the same bus, and that communicate with each other. Each of the plurality of storage devices includes a device controller and a storage medium. The plurality of storage devices store each of data and parities generated on the basis of the data, the data and the parities being included in RAID stripes. A first device controller of a first storage device included in the RAID group transmits, to the plurality of storage devices included in the RAID group other than the first storage device, an instruction to transfer the data and/or the parities included in the RAID stripes and restores the data or the parity corresponding to the first storage device of the RAID stripes on the basis of the transferred data and the transferred parities.

Abstract: An information processing device having a processor and memory, and including one or more accelerators and one or more storage devices, wherein: the information processing device has one network for connecting the processor, the accelerators, and the storage devices; the storage devices have an initialization interface for accepting an initialization instruction from the processor, and an I/O issuance interface for issuing an I/O command; and the processor notifies the accelerators of the address of the initialization interface or the address of the I/O issuance interface.

Abstract: First and second bridging portions (63a and 63b) is disposed so as to form a shock absorbing space (63c) between the sensor accommodating portion (61) and the fixing portion (62), and elastically deformed by external force, and the paired bridging portions (the shock absorbing space (63c)) is caused to function as a shock absorbing portion (63). Furthermore, the sensor accommodating portion (61) is thinner than each pf the bridging portions (63a and 63b), after the sensor accommodating portion (61) is elastically deformed and a contact of a blockage is detected, the first and second bridging portions (63a and 63b) can be elastically deformed to absorb a shock. Therefore, it is possible to significantly reduce a load on the blockage in comparison with the conventional technique. Since the drive unit is reversely driven after shock absorption, it is possible to reduce the load on the drive unit and so forth, and to inhibit the occurrence of inconvenience such as burning.

Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in a recess on the substrate; performing etching to partially or entirely remove the silicon film remaining on a side wall inside the recess by supplying an etching gas selected from a hydrogen bromide gas and a hydrogen iodide gas into the process container of a vacuum atmosphere while heating the substrate; subsequently forming a silicon film inside the recess; and heating the substrate to increase a grain size of the silicon film.

Abstract: In a touch sensor unit, a bracket body is provided with a first protruding portion which is disposed on a vehicle interior side of a base portion, a gap portion is provided between the first protruding portion and the base portion, the height from the bracket body to the distal end of the first protruding portion is smaller than the height from the bracket body to the sensor portion. Therefore, when the sensor portion and the base portion are elastically deformed by contact with a blockage, the elastically deformed sensor portion and base portion enter the gap portion, thereby preventing the sensor portion and the base portion from being pressed against the corner portion of the bracket without increasing the rigidity of the sensor portion and the base portion.

Abstract: In a touch sensor unit, since a base portion is provided with a hard resin portion for holding a curved state of a sensor portion deformed in conformity to a curved shape of a door frame of a tail gate, even when the base portion is not fixed to the tail gate, it is possible to hold the curved state of the base portion. Therefore, after the curved base portion is fixed to the tail gate with a double-sided adhesive tape, even if the double-sided adhesive tape is degraded with age, a restoring force of the sensor portion does not remove the double-sided adhesive tape.

Abstract: A purpose is to speed up a write process with a parity update. An information processing system includes storage devices constituting a RAID group, coupled to one bus and communicating with each other. Each of the storage devices includes a device controller and a storage medium for storing data. The storage devices include a first storage device storing old data and a second storage device storing old parity associated with the old data. A first device controller of the first storage device creates intermediate parity based on the old data and new data for updating the old data and transmit the intermediate parity to the second storage device specifying the second storage device storing the old parity associated with the old data, and a second device controller of the second storage device creates new parity based on the intermediate parity and the old parity.

Abstract: A variable wavelength optical filter module according to the present invention includes a package, a variable wavelength optical filter, and a detector. The package includes a reflection part (reflecting faces) in the inside of the package. The variable wavelength optical filter is disposed in the inside of the package and includes a first reflecting plate and a second reflecting plate facing each other, with a clearance between the first reflecting plate and the second reflecting plate being variable. The detector is disposed in the inside of the package and detects a ray of light having passed through the variable wavelength optical filter. Then, the variable wavelength optical filter and the detector are disposed on the opposite side to the reflection part (reflecting faces). The ray of the light incident into the inside of the package via the variable wavelength optical filter enters the detector via the reflection part (reflecting faces).

Abstract: The semiconductor memory device comprises a memory element group (one or more semiconductor memory elements) and a memory controller. The memory controller comprises a processor configured to process at least a part of an I/O command from a higher-level apparatus when the part of the I/O command satisfies a predetermined condition, and one or more hardware logic circuits configured to process the entire I/O command when the I/O command does not satisfy the predetermined condition.

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

Abstract: A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

Abstract: A database search system receives a command and searches for data, which meets a search condition specified on the basis of the received command, in a whole database which is a database as an entity. The database search system generates a virtual database which is a list of address pointers to the found data and stores the generated virtual database.

Abstract: A latent additive which is represented by general formula (1). (In the formula, A represents a five-membered or six-membered aromatic ring or heterocyclic ring; each of R1 and R2 independently represents a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a nitro group, a carboxyl group, an optionally substituted alkyl group having 1-40 carbon atoms, an aryl group having 6-20 carbon atoms, an arylalkyl group having 7-20 carbon atoms or a heterocyclic ring-containing group having 2-20 carbon atoms; and R4 represents an alkyl group having 1-20 carbon atoms, an alkenyl group having 2-20 carbon atoms, an aryl group having 6-20 carbon atoms, an arylalkyl group having 7-20 carbon atoms, a heterocyclic ring-containing group having 2-20 carbon atoms or a trialkylsilyl group.

Abstract: A computer system according to one preferred embodiment of the present invention has a server and a storage subsystem, wherein the server is configured to enable data write to a cache area of the storage subsystem. Further, the server manages the usages of the cache area. When storing data from the server to the cache area, the server determines whether a data-writable area exists in the cache area or not. If there is a writable area, data is stored in the writable area.

Abstract: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

Abstract: A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.

Abstract: A caulking die according to an embodiment of the present invention includes an end surface being connected to each of an upper surface and a lower surface. The end surface includes a first protruded part including a first top portion, a recessed groove, and a second protruded part including a second top portion in sequential order from the lower surface side toward the upper surface side. A length of the second top portion is larger than a length of the first top portion, and a height of the second protruded part is larger than a height of the first protruded part in a cross-sectional view perpendicular to a width direction of the end surface. A caulking tool includes the caulking die. A method for manufacturing a caulking joint uses the caulking tool.

Abstract: Disclosed is an antioxidant for a thermoplastic resin that provides an excellent oxidation-preventing effect to a thermoplastic resin and that has an excellent effect of preventing a change in color caused by nitrogen oxides. Specifically, a compound represented by any of General Formulae (2) to (4), particularly a compound in which R2 in the formulae is an alkyl group having 1 to 8 carbon atoms whose terminal on an oxygen atom side is linked with —CO—O—, is used as the antioxidant for a thermoplastic resin. Details of General Formulae (2) to (4) are as described in the description.

Abstract: A storage apparatus has a plurality of hardware engines which send and receive information to and from a controller, which, on the condition of acquiring a request command from a host, determines identifying information of the request command, executes data I/O processing to the storage device according to the request command when first identifying information has been added to the request command and when second identifying information has been added to the acquired request command, transfers the request command to the hardware engine, acquires the data requested by the hardware engine from the storage device and transfers the acquired data to the hardware engine. The hardware engine acquires and analyzes an add-on command from the host and according to the request command, requests the controller to transfer the data based on the analysis result, and thereafter executes processing to the data transferred by the controller according to the add-on command.