Abstract: Disclosed is a solder material and a manufacturing method thereof. The solder material has a first layer composed of a first metallic material and a second layer composed of a second metallic material which is different from the first metallic material, the first layer being formed in an elongated shape having axiality, and the second layer covering the first layer to surround the axis of the first layer. The solder material is in a form of a wire, a granule, a sheet, a tape or a planar fragment. The manufacturing method includes: covering a first metallic material with a second metallic material which is different from the first metallic material to prepare a covered body; and rolling the covered body to prepare a solder material comprising a first layer formed of the first metallic material in an elongated shape having axiality and a second layer covering the first layer to surround an axis of the first layer.

Abstract: An electrical card connector comprises a connector body having an elongated housing body (2) in which a plurality of contact elements (1) are provided for electrical connection with a card P and a pair of guide arms (3) extending rearwardly from opposite ends of the housing body and an ejector mechanism having a slider (8) movable along the guide arms and having an abutment portion (9A) for abutment with the front edge of the card P, characterized in that the ejector mechanism is provided with a temporary fixation device (10) for engagement with an engaging member (4B) of the housing body (2) wherein the engaging between the temporary fixation device (10) and the engaging member (4B) is released by an operational force received by the slider (8).

Abstract: There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C.

Abstract: A circuit board electrical connector includes a plurality of multicontact connectors (1) to be mounted on a circuit board with a predetermined interval; a plurality of linking members (6) for joining the multicontact connectors with the predetermined interval before the multicontact connectors are mounted on the circuit board; and linking devices (7-10) for removably linking the multicontact connectors to the linking members.

Abstract: The invention provides a method for concentrating impurity contained in a semiconductor crystal sample 11 by irradiating repeatedly a specified position of the semiconductor crystal sample 11 with a laser beam having a specified intensity by means of a laser oscillator 13. Then the invention provides a method for analyzing impurity contained in the impurity concentrated area of the semiconductor crystal sample 11 in high sensitivity by means of a specified physical analyzing means. According to demand, a method of the invention concentrates impurity by means of a laser beam after forming an insulating film such as an oxide film and the like transparent to the laser beam on the surface of the semiconductor crystal sample. At the same time, the invention provides a concentrator and an analyzer to be used for these concentrating method and analyzing method.