Abstract: A resin part includes a molded main body that has a plate shape with a longitudinal direction and is constituted of an injection-molded product. The resin part has a gate portion that is a vestige of a resin injection gate. The gate portion is located in an end face part of the molded main body to cross a position corresponding to a center of gravity of the molded main body; the end face part extends in the longitudinal direction of the molded main body.

Abstract: An oil pump includes: a shaft member; an inner rotor configured to rotate integrally with the shaft member; an outer rotor forming a rotor chamber into which oil is sucked from a suction passage and from which the oil is discharged toward a discharge passage, between the inner rotor and the outer rotor; a body member having a recess-shaped housing chamber in which each rotor is housed so as to be rotatable about an axis; and a cover member attached so as to close the housing chamber. The rotor chamber has first and second suction ports through each of which the oil to be sucked from the suction passage passes. The oil pump includes a straightening member branching the suction passage from a main path to the first suction port side and the second suction port side.

Abstract: An oil pump includes: a shaft member; an inner rotor configured to rotate integrally with the shaft member; an outer rotor forming a rotor chamber into which oil is sucked from a suction passage and from which the oil is discharged toward a discharge passage, between the inner rotor and the outer rotor; a body member having a recess-shaped housing chamber in which each rotor is housed so as to be rotatable about an axis; and a cover member attached so as to close the housing chamber. The rotor chamber has first and second suction ports through each of which the oil to be sucked from the suction passage passes. The oil pump includes a straightening member branching the suction passage from a main path to the first suction port side and the second suction port side.

Abstract: A gear pump includes: an inner rotor having external teeth; an outer rotor having a tubular inner housing portion in which the inner rotor is rotatably housed in an eccentric state, and internal teeth meshing with the external teeth; a first core having a tubular rotor housing portion in which the inner and outer rotors are housed, and a flange portion projecting radially outward from a tube wall of the rotor housing portion; a board-shaped second core having a contact portion in contact with the flange portion in an axial direction, and closing an opening of the rotor housing portion; and a housing opposing the second core and made of a resin. A gap is formed between opposing surfaces of the second core and the housing in a state where the flange portion is in contact with the contact portion and the housing opposes the second core.

Abstract: In a duct device that includes a duct body 9 having: an air flow path 90 defined thereinside; and a first divisional body 1 and a second divisional body 5 combined in a combining direction in which the first and second divisional bodies 1 and 5 approach each other, at time of positioning when a first duct portion 2 and a second duct portion 6 oppose each other, and an engagement portion 33 and an engagement projection 7 do not engage with each other, an outer wall portion 65 covers, from an outer side, a tip portion 21 that is a front end of the first duct portion 2, and the engagement portion 33 contacts with the engagement projection 7 in the combining direction, and covers a second engagement surface 72 that is a rear end of the engagement projection 7, with an engagement wrap portion 35, from the outer side.

Abstract: A semiconductor device includes a semiconductor substrate, a trench provided in the semiconductor substrate, a trench gate formed in the trench, a vertical transistor having the trench gate, an active region having the vertical transistor, a field region surrounding the active region and having a protection diode, and a field insulating film formed on a surface of the semiconductor substrate, the protection diode being formed on the field insulating film. The trench gate includes a first polysilicon layer and has an embedded part embedded in the trench and an extension part connected to the embedded part and extending onto the surface of the semiconductor substrate, the protection diode includes a second polysilicon layer thicker than the first polysilicon layer, and an overlapping part having the second polysilicon layer is formed on the extension part.

Abstract: A gear pump includes: an inner rotor having external teeth; an outer rotor having a tubular inner housing portion in which the inner rotor is rotatably housed in an eccentric state, and internal teeth meshing with the external teeth; a first core having a tubular rotor housing portion in which the inner and outer rotors are housed, and a flange portion projecting radially outward from a tube wall of the rotor housing portion; a board-shaped second core having a contact portion in contact with the flange portion in an axial direction, and closing an opening of the rotor housing portion; and a housing opposing the second core and made of a resin. A gap is formed between opposing surfaces of the second core and the housing in a state where the flange portion is in contact with the contact portion and the housing opposes the second core.

Abstract: A semiconductor device having a first surface formed at a first height and a second surface formed at a second height on a semiconductor substrate includes: a base region formed in the semiconductor substrate; a trench formed from the first surface and the second surface into the semiconductor substrate; a gate insulating film covering an inner side of the trench; a gate electrode embedded to a third height; an insulating film formed on the gate electrode; a first region which has the first surface and in which a base contact region is formed; and a second region which has the second surface and in which a source region is formed, the first region and the second region being alternately arranged in the trench extension direction to prevent a reduction in channel formation density.

Abstract: Provided is a semiconductor device, including: a drain region of a first conductivity type and a source region of the first conductivity type in a semiconductor substrate; a base region of a second conductivity type between the drain region and the source region; a base contact region of the second conductivity type in the base region; a gate electrode on the base region through a gate insulating film; a bidirectional diode overlapping with the gate electrode in a first direction perpendicular to the semiconductor substrate, and having one end electrically connected to the gate electrode and the other end electrically connected to the source region; a source metal layer electrically connected to the source region, the base contact region, and the other end of the bidirectional diode; and a gate metal layer electrically connected to the gate electrode, and overlapping with the source metal layer in the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, a trench provided in the semiconductor substrate, a trench gate formed in the trench, a vertical transistor having the trench gate, an active region having the vertical transistor, a field region surrounding the active region and having a protection diode, and a field insulating film formed on a surface of the semiconductor substrate, the protection diode being formed on the field insulating film. The trench gate includes a first polysilicon layer and has an embedded part embedded in the trench and an extension part connected to the embedded part and extending onto the surface of the semiconductor substrate, the protection diode includes a second polysilicon layer thicker than the first polysilicon layer, and an overlapping part having the second polysilicon layer is formed on the extension part.

Abstract: In a duct device that includes a duct body 9 having: an air flow path 90 defined thereinside; and a first divisional body 1 and a second divisional body 5 combined in a combining direction in which the first and second divisional bodies 1 and 5 approach each other, at time of positioning when a first duct portion 2 and a second duct portion 6 oppose each other, and an engagement portion 33 and an engagement projection 7 do not engage with each other, an outer wall portion 65 covers, from an outer side, a tip portion 21 that is a front end of the first duct portion 2, and the engagement portion 33 contacts with the engagement projection 7 in the combining direction, and covers a second engagement surface 72 that is a rear end of the engagement projection 7, with an engagement wrap portion 35, from the outer side.

Abstract: A semiconductor device in which a trench in a cell outer peripheral region configured to pull out a gate electrode and a trench in a cell region having a vertical transistor are formed with the same width to enable a reduction in chip area, and a manufacturing method thereof in which a gate contact hole is formed directly on a trench in a cell outer peripheral region on a self-alignment basis, and a gate wiring electrode is connected thereto are provided.

Abstract: Provided is a semiconductor device, including: a drain region of a first conductivity type and a source region of the first conductivity type in a semiconductor substrate; a base region of a second conductivity type between the drain region and the source region; a base contact region of the second conductivity type in the base region; a gate electrode on the base region through a gate insulating film; a bidirectional diode overlapping with the gate electrode in a first direction perpendicular to the semiconductor substrate, and having one end electrically connected to the gate electrode and the other end electrically connected to the source region; a source metal layer electrically connected to the source region, the base contact region, and the other end of the bidirectional diode; and a gate metal layer electrically connected to the gate electrode, and overlapping with the source metal layer in the first direction.

Abstract: To obtain a semiconductor device in which a reduction in channel formation density in a trench extending direction is suppressed, provided is a semiconductor device including a first region and a second region alternately arranged in the trench extending direction. The first region includes a first front surface semiconductor electrode layer of a first conductivity type having a portion along an outer side surface of the trench from the front surface of the semiconductor device to the first height to which a gate electrode is embedded into the trench. The second region includes a base contact region having a depth from the front surface of the semiconductor device to the second height higher than the first height and a second front surface semiconductor electrode layer of the first conductivity type from the first height to the second height.

Abstract: A semiconductor device in which a trench in a cell outer peripheral region configured to pull out a gate electrode and a trench in a cell region having a vertical transistor are formed with the same width to enable a reduction in chip area, and a manufacturing method thereof in which a gate contact hole is formed directly on a trench in a cell outer peripheral region on a self-alignment basis, and a gate wiring electrode is connected thereto are provided.

Abstract: A semiconductor device having a first surface formed at a first height and a second surface formed at a second height on a semiconductor substrate includes: a base region formed in the semiconductor substrate; a trench formed from the first surface and the second surface into the semiconductor substrate; a gate insulating film covering an inner side of the trench; a gate electrode embedded to a third height; an insulating film formed on the gate electrode; a first region which has the first surface and in which a base contact region is formed; and a second region which has the second surface and in which a source region is formed, the first region and the second region being alternately arranged in the trench extension direction to prevent a reduction in channel formation density.

Abstract: To obtain a semiconductor device in which a reduction in channel formation density in a trench extending direction is suppressed, provided is a semiconductor device including a first region and a second region alternately arranged in the trench extending direction. The first region includes a first front surface semiconductor electrode layer of a first conductivity type having a portion along an outer side surface of the trench from the front surface of the semiconductor device to the first height to which a gate electrode is embedded into the trench. The second region includes a base contact region having a depth from the front surface of the semiconductor device to the second height higher than the first height and a second front surface semiconductor electrode layer of the first conductivity type from the first height to the second height.

Abstract: Provided is a wind turbine generator having a tower structure that can cope with increases in the size and height thereof while avoiding the restrictions of transportation limits. In a wind turbine generator in which a nacelle is installed at a top portion of a monopole type wind turbine tower, in which tower shells having circular cylindrical shapes are connected together, to generate power, the tower is provided with a double-tube structure at least at the bottom end of the tower.

Abstract: An insulated gate semiconductor device includes a one conductivity type semiconductor layer, a first operation part in a surface of the semiconductor layer and a second operation part in the surface of the semiconductor layer that is smaller in area than the first operation part. A first channel region and a first transistor of an opposite conductivity type are provided in the first operation part and a second channel region and a second transistor of the opposite conductivity type are provided in the second operation part. The first operation part is disposed around the second operation part. Accordingly, design rules for four corner portions can be made uniform and depletion layer spreading in corner portions at a peripheral edge of a channel region of an operation part in application of a reverse voltage is also made approximately uniform. Thus, stable VDSS breakdown voltage characteristics can be obtained.

Abstract: An isolation region is provided around a sense part. The isolation region is provided to have a depth that suppresses spread of a region with an uneven current distribution, which occurs at a peripheral edge of the sense part. Thus, in the sense part, an influence of the region with the uneven current distribution can be suppressed. Since the current distribution can be set more even throughout the sense part, the on-resistance in the sense part can be set closer to its designed value. Thus, a current ratio corresponding to a cell ratio can be obtained as designed. Consequently, current detection accuracy is improved.