Abstract: An isolation region is provided around a sense part. The isolation region is provided to have a depth that suppresses spread of a region with an uneven current distribution, which occurs at a peripheral edge of the sense part. Thus, in the sense part, an influence of the region with the uneven current distribution can be suppressed. Since the current distribution can be set more even throughout the sense part, the on-resistance in the sense part can be set closer to its designed value. Thus, a current ratio corresponding to a cell ratio can be obtained as designed. Consequently, current detection accuracy is improved.

Abstract: A shield member comprises an outer shield portion, an inner shield portion, and a connecting portion. The outer shield portion and the inner shield portion have annular shapes. The connecting portion connecting the outer shield portion with the inner shield portion has a cylindrical shape. The shield member has a cylindrical shape as a whole. A top potion of the outer shield portion has a dam portion which protrudes in an axial direction of the outer shield portion and elongates in a peripheral direction of the outer shield portion. A surface of the dam portion and a surface of the outer shield portion form a gutter-like guiding portion. The shield member shields an outer opening of a outer side member, and shields at least one of an inner opening of an outer wheel housing and an outer periphery of an inlet filler pipe.

Abstract: An insulated gate semiconductor device includes a one conductivity type semiconductor layer, a first operation part in a surface of the semiconductor layer and a second operation part in the surface of the semiconductor layer that is smaller in area than the first operation part. A first channel region and a first transistor of an opposite conductivity type are provided in the first operation part and a second channel region and a second transistor of the opposite conductivity type are provided in the second operation part. The first operation part is disposed around the second operation part. Accordingly, design rules for four corner portions can be made uniform and depletion layer spreading in corner portions at a peripheral edge of a channel region of an operation part in application of a reverse voltage is also made approximately uniform. Thus, stable VDSS breakdown voltage characteristics can be obtained.

Abstract: A shield member comprises an outer shield portion, an inner shield portion, and a connecting portion. The outer shield portion and the inner shield portion have annular shapes. The connecting portion connecting the outer shield portion with the inner shield portion has a cylindrical shape. The shield member has a cylindrical shape as a whole. A top potion of the outer shield portion has a dam portion which protrudes in an axial direction of the outer shield portion and elongates in a peripheral direction of the outer shield portion. A surface of the dam portion and a surface of the outer shield portion form a gutter-like guiding portion. The shield member shields an outer opening of a outer side member, and shields at least one of an inner opening of an outer wheel housing and an outer periphery of an inlet filler pipe.

Abstract: In a semiconductor device, a variable-potential insulated electrode and a gate region are kept at the same potential through an aluminum layer. This device is mainly used as a voltage-driving type semiconductor device. By varying the voltage applied to the variable-potential insulated electrode through a gate electrode, a conductive path is formed in a channel region to switch on the device. The channel region turns into an N-type region when a positive potential is applied to the gate electrode, and turns into a pseudo P-type region when a ground potential or negative potential is applied to the gate electrode.

Abstract: Hithereto, there was a problem involving that the VF and IR characteristics of a Schottky barrier diode were in a tradeoff relationship, and an increase in leak current was unavoidable to implement low VF. In some preferred embodiments, a plurality of P+-type orthohexagonal semiconductor regions are provided in a Schottky junction region. Since they are spaced from one another equidistantly, depletion layers are spread from the P+-type semiconductor regions when a reverse voltage is applied, and are fully filled in an epitaxial layer. As a result, a leak current occurring at the Schottky junction interface can be prevented from leaking to the cathode side. Even when a high leak current occurs, it can be intercepted by the depletion layers, so that the tradeoff relationship between VF and IR can be eliminated. Thus, a low VF can be implemented without consideration for IR.

Abstract: In a semiconductor device, a variable-potential insulated electrode and a gate region are kept at the same potential through an aluminum layer. This device is mainly used as a voltage-driving type semiconductor device. By varying the voltage applied to the variable-potential insulated electrode through a gate electrode, a conductive path is formed in a channel region to switch on the device. The channel region turns into an N-type region when a positive potential is applied to the gate electrode, and turns into a pseudo P-type region when a ground potential or negative potential is applied to the gate electrode.

Abstract: A sealed battery case includes a resin composition comprising 50-100% by weight of a crystalline polypropylene resin having a load deflection temperature (load: 1.81 MPa) of 70° C. or higher and an elongation at tension break (23° C., 50 mm/minute) of 50% or more, and 0-50% by weight of a polyphenylene ether based resin. The resin composition has a weld strength (95° C.) of 13 MPa or more, and a notched bending strength (at 95° C.) of 250 N or more.

Abstract: A hydrostatic anti-vibration system includes a main tank provided on a construction to be suppressed from vibrating and having a main tank body of substantially flat rectangular configuration. Hollow vertical extensions extend upwardly from peripheral edge portions of the main tank body and are filled with a working liquid at a predetermined level with upper air chambers maintained thereabove. Ducts communicate the upper air chambers of the hollow vertical extensions. Intermediate tank portions are disposed at the intermediate portions of respective ducts and contain a vibration suppressing liquid. A pivotal plate is disposed in each of the intermediate tank portions to separate the interior space of the intermediate tank portion into a pair of chambers respectively connected to corresponding portions of the duct. The plate pivots in response to flow pressure of the vibration suppressing liquid. A damping mechanism provides a resistance against displacement of the pivotal plate.