Abstract: The engine controlling apparatus includes a selector, a setter, and a controller. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors or the number of injections performed in one stroke of the engine differs among the injection modes. The setter sets a mode correction amount that reflects an output characteristic of a first sensor corresponding to the injection mode. The controller performs feedback control using both a detection signal from the first sensor and the mode correction amount.

Abstract: The engine controlling apparatus includes a selector and a changer. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors differ among the injection modes. The changer changes a map specifying a reference value of a detection signal detected by a first sensor according to the injection mode.

Abstract: The engine controlling apparatus includes a selector and a changer. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors differ among the injection modes. The changer changes a map specifying a reference value of a detection signal detected by a first sensor according to the injection mode.

Abstract: The engine controlling apparatus includes a selector and a changer. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where the number of injections performed in one stroke of the engine is different among a plurality of injection modes. The changer changes a map specifying a reference value of a detection signal according to the injection mode.

Abstract: The engine controlling apparatus includes a selector, a setter, and a controller. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors or the number of injections performed in one stroke of the engine differs among the injection modes. The setter sets a mode correction amount that reflects an output characteristic of a first sensor corresponding to the injection mode. The controller performs feedback control using both a detection signal from the first sensor and the mode correction amount.

Abstract: A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Abstract: A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Abstract: A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Abstract: A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Abstract: A wafer supporting unit (10) includes a base (12) and a thermally conductive member (14). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber (16) serving as the main material, and Ag fine powder (18) is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions (20) is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Abstract: The invention is aimed at preventing apparatus damage, loss of data, accidental firing of a firearm due to dropping or subjection to an impact, and other mishaps caused by accidental dropping or improper handling of the apparatus, firearm, etc. due to carelessness on the side of users. To achieve this, a drop detecting means is provided that detects the dropping of the apparatus when the apparatus is dropped, and control is performed so as to set the apparatus in a safe condition in response to a drop detection signal supplied by the drop detecting means.

Abstract: A plasma processing apparatus and method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O2 (oxygen) gas, and the volume ratio of the O2 (oxygen) gas to the SF6 gas is in a range from 11% to 25%.

Abstract: There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same.

Abstract: In a state where a process gas including SF.sub. 6 and O.sub. 2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.

Abstract: A resonant frequency sensor is disposed in a plasma-processing chamber included in a semiconductor fabricating apparatus. A change in the resonant frequency caused by etching, sputtering or deposition is sensed in order to detect the timing of performing the maintenance of the processing chamber. If data representing the relationship between an amount of etching or deposition occurring at a predetermined position in the processing chamber and occurrence of an abnormality is produced in advance, an optimal maintenance timing can be determined.

Abstract: This invention provides a method of manufacturing mask for electron beam lithography and a mask blank for electron beam lithography, which could prevent damage upon a front side of an SOI (Silicon On Insulator) layer and also provide desirable etching of a silicon base layer of an SOI substrate is used. A mask blank for electron beam lithography is manufactured as an intermediary product by etching a silicon base layer and a BOX layer subsequent to forming a protective layer on a front side of an SOI (Silicon On Insulator) layer simultaneously with forming a hard mask on a back side of the SOI layer. Then, an etching process is performed upon the SOI layer to thereby complete a manufacture process of a mask for electron beam lithography having an aperture for transmitting an electron beam therethrough.

Abstract: A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Abstract: The invention is aimed at preventing apparatus damage, loss of data, accidental firing of a firearm due to dropping or subjection to an impact, and other mishaps caused by accidental dropping or improper handling of the apparatus, firearm, etc. due to carelessness on the side of users. To achieve this, a drop detecting means is provided that detects the dropping of the apparatus when the apparatus is dropped, and control is performed so as to set the apparatus in a safe condition in response to a drop detection signal supplied by the drop detecting means.

Abstract: A silicon substrate in which MEMS devices are formed and a quartz substrate used to seal the silicon substrate are tentatively bonded to each other. While the silicon substrate and quartz substrate are being pressed using a pressure jig, light having a wavelength that is absorbed into the silicon substrate but not into the pressure jig and quartz substrate is radiated from light sources to the interface between the silicon substrate and quartz substrate. Thus, the interface is heated and the silicon substrate and quartz substrate are bonded.

Abstract: A conductive film is formed on a substrate into which a MEMS circuit is fabricated, and a film of a dielectric A having a low dielectric constant and a film of a dielectric B having a high dielectric constant are formed on the conductive film, followed by the formation of a conductive film over the dielectric films. A millimeter wave is guided along the film of the dielectric B functioning as a dielectric waveguide, and is propagated along its length while being reflected by the conductors.