Abstract: A fishbone sensor (21) has a plurality of resonators resonating with sounds having different frequencies from each other and converts the vibration of each resonator into a signal corresponding to each vibration level. An amplifying circuit (22) amplifies the signal converted by the fishbone sensor (21) by a predetermined gain and supplies it to an external switch circuit (23). The external switch circuit (23) switches signal supply paths and sequentially sends supplied signals via an external antenna (24). An internal switch circuit (32) switches signal supply paths and sequentially supplies the signals sent via an internal antenna (31) to a plurality of electrodes (4a), thereby stimulating the nerves in the cochlea.

Abstract: The present invention relates to a method of conveying a substrate that can convey even a thinned substrate while maintaining its flatness and prevents particles from adhering to the substrate, wherein the step of a conveyor attaching a third substrate holding mechanism to the substrate with a first substrate holding mechanism holding the substrate, the step of driving the third substrate holding mechanism so as to hold the substrate by the conveyor while a first base is holding the substrate, and thereafter canceling the holding of the substrate by the first substrate holding mechanism and jetting out fluid from a first fluid jetting mechanism, the step of conveying the substrate from the first base to a second base and attaching the substrate to a second substrate holding mechanism, and the step of driving the second substrate holding mechanism so as to hold the substrate by the second base while the third base is holding the substrate, and thereafter jetting out fluid from a second fluid jetting mechanism

Abstract: A plurality of elements such as a resistor (10), capacitor (20), and coil (30) and switches 41 to 44 for connecting these elements are formed integrally on a substrate 1 and the elements are made freely connectable to form a MEMS array. The switches 41 to 44 used may be transistor switches or mechanical switches. It is possible to produce a MEMS device by replacing the on/off states of the switches 41 to 44 of the MEMS array with short-circuited/open states of the interconnects.

Abstract: On a semiconductor substrate having a control circuit layered thereon, an actuator and a solar cell are formed in a block. Thereafter, the actuator and solar cell are each divided into segments in order to form a solar cell array having a number of solar cells supported by respective actuators.

Abstract: A resonant frequency sensor is disposed in a plasma-processing chamber included in a semiconductor fabricating apparatus. A change in the resonant frequency caused by etching, sputtering or deposition is sensed in order to detect the timing of performing the maintenance of the processing chamber. If data representing the relationship between an amount of etching or deposition occurring at a predetermined position in the processing chamber and occurrence of an abnormality is produced in advance, an optimal maintenance timing can be determined.

Abstract: A wafer supporting unit is disclosed that does not produce curvature in a wafer, that provides efficient cooling of the wafer, and that does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Abstract: A method of producing a feedthrough having a plurality of through conductive parts formed in a substrate is provided. This method includes the steps of: forming a stopper film on one surface of the substrate; forming a plurality of holes that reach the stopper film by etching the substrate; forming a plurality of conductive parts in the plurality of holes; removing the stopper film by etching; and making the top ends of the plurality of conductive parts protrude from the substrate by etching the surface of the substrate from which the stopper film has been removed.

Abstract: A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

Abstract: In a state where a process gas including SF.sub.6 and O.sub.2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.

Abstract: A method of forming via hole metal layers, including the steps of forming via holes in a Si layer by etching an SOI substrate having a SiO2 layer and the Si layer formed on a Si substrate in order of precedence, the via holes being extended to the SiO2 layer, and forming the via hole metal layers in the via holes.

Abstract: A plasma processing apparatus and a plasma processing method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O2 (oxygen) gas, and the volume ratio of the O2 (oxygen) gas to the SF6 gas is in a range from 11% to 25%.

Abstract: This invention provides a method of manufacturing mask for electron beam lithography and a mask blank for electron beam lithography, which could prevent damage upon a front side of an SOI (Silicon On Insulator) layer and also provide desirable etching of a silicon base layer of an SOI substrate is used.

Abstract: A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.