Abstract: A device enabling simultaneous recording and playback allows commercials to retain their advertisement function even if the commercials are skipped over during a playback process. By digital watermarking, CM-substitute data is embedded in program data among video signals broadcasted from a broadcast station. CM-substitute data is to present information such as a particular sponsor name and commodity name on display. The video recording/playback device includes a randomly accessible storage unit and has a simultaneous recording/playback capability. If commercial video is skipped over and is not rendered by playback, the CM-substitute information is superimposed on the rendered video of the program associated with the commercial. Thus, the commercial advertisement function can be retained.

Abstract: An active matrix substrate comprises a substrate, a thick-film adhesive pad made of organic resin, provided on the substrate and including, at least at a part of a side face thereof, an inclined region having a first contact angle smaller than 90 degrees to the main face of the substrate, a thin-film active element provided on the thick-film adhesive pad, and a thin-film interconnection line connected to the thin-film active element and extending onto the substrate via the inclined region, a film thickness of the thick-film adhesive pad being four or more times that of the thin-film interconnection line.

Abstract: A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.

Abstract: A display device comprises a first plastic substrate, a first adhesion layer formed in a first region of the first plastic substrate, the first region being a region where a pixel region is to be formed thereon, a second adhesion layer formed in a peripheral region outside of the first region of the first plastic substrate, a first thin glass layer formed on the first and second adhesion layers, a plurality of active elements formed on the first thin glass layer in one-to-one relation with a plurality of pixels, a display part formed on the first thin glass layer, the display part corresponding to the pixel region and being driven by the plurality of active elements, and an opposing substrate formed over the display part.

Abstract: The present invention provides a movement correction frame count transformation apparatus for carrying out frame count transformation processing on a picture signal. In the apparatus, an input picture signal (S1) of interlaced scanning is converted into a signal (S2) of sequential scanning by an IP conversion unit (1). A movement detecting unit (3) detects movement detection signals (MD1 and MD2). A block unit movement vector searching unit (4) detects a block unit movement vector (BMV) by carrying out block matching processing. A movement vector correcting unit (5) carries out miniblock division processing to generate a movement vector (BV) if a movement correction error is equal to or greater than a threshold value. A pixel unit movement vector generating unit (6) generates a movement vector with a smallest error component between a frame signal of a current frame and a frame signal of an immediately preceding frame as a movement vector of a pixel.

Abstract: A low-cost motion-compensated picture signal scan conversion circuit ensuring high picture quality is to be provided. The circuit has a motion-adaptive first interpolation signal generator; a second motion-compensated interpolation signal generator; a motion vector detector; and a setting unit for checking the reliability of motion compensation by comparing signals from the second interpolation signal generator with signals on interlaced scanning lines, and setting the selection of signals from the first and second interpolation signal generators, wherein interlaced scanned signals are converted into progressive scanned signals by setting the threshold so that the threshold become smaller with an increase in the number of re-searched blocks in the detection of motion vectors.

Abstract: An active matrix substrate comprises a substrate, a plurality of adhesion parts provided on the substrate so as to have substantially the same height, and a plurality of active elements provided on the plurality of adhesion parts, respectively, each of the plurality of adhesion parts including a height control member and an adhesive.

Abstract: An active matrix substrate comprises a substrate, a position control member provided on the substrate and surrounding a specific space by a sidewall thereof to expose a surface of the substrate and whose inner side face inclines at a specific angle with respect to the substrate, an active element provided so as to engage with the inner side face of the position control member and whose outer side face has at least a part that inclines at substantially the same angle as the specific angle of the inner side face of the position control member with respect to the substrate, and an adhesion section which bonds the active element to the substrate or the position control member and whose wettability with the position control member is lower than that of the adhesive with the substrate.

Abstract: A wet paint spray booth treating agent includes sepiolite alone or further accompanying cationic polymer or amphoteric metal compound. In a method of treating a wet paint spray booth, the sepiolite alone or further accompanying the cationic polymer or the amphoteric metal compound is added. The wet paint spray booth treating agent and a method of treating a wet paint spray booth improve the effect of reduction in tackiness and decrease the load of agents to prevent the corrosion of furnishings. The sepiolite is a fibrous mineral containing chain structures having lots of micropores so that the sepiolite can reduce the tackiness of the paint due to reaction with the particles of the paint in such a manner to adsorb the particles in the micropores thereof.

Abstract: A display apparatus for a television or computer terminal having a cathode ray tube with a deflection coil. The display apparatus includes a signal processing circuit which compresses a display period in a horizontal scanning period of an input video signal and which expands a blanking interval of the horizontal scanning period of the video signal, the signal processing circuit providing an output of the video signal to the cathode ray tube, and a horizontal retrace interval expansion circuit which expands a horizontal retrace line interval of a horizontal deflection current for the deflection coil of the cathode ray tube in accordance with the blanking period expanded by the signal processing circuit. The cathode ray tube displays the input video signal in accordance with the output of the signal processing circuit and the output of the horizontal retrace interval expansion circuit.

Abstract: In a method of treating a wet paint spray booth, the sepiolite alone or further accompanying the cationic polymer or the amphoteric metal compound is added. The wet paint spray booth treating agent and a method of treating a wet paint spray booth improve the effect of reduction in tackiness and decrease the load of agents to prevent the corrosion of furnishings. The sepiolite is a fibrous mineral containing chain structures having lots of micropores so that the sepiolite can reduce the tackiness of the paint due to reaction with the particles of the paint in such a manner to adsorb the particles in the micropores thereof. Since both the particles of the paint and the particles of the sepiolite are negatively charged, when the cationic polymer or the amphoteric metal compound is added in combination with the sepiolite, the electrical repulsion is reduced so that the particles of the paint become easy to be adsorbed to improve the effect of the reduction in the tackiness.

Abstract: In order to carry out format conversion or scaling processing of picture signal by a memory having a small capacity, picture signals of interlace scanning are converted into picture signals of progressive scanning by interpolation by using an IP convertor 1 and a multiple scan convertor 3, a scaling processing of expansion and compression in the horizontal direction is firstly performed by using a horizontal scaling unit 5, processing of expansion, compression, frame rate conversion, synchronization and the like are secondly performed by using a vertical scaling unit 6 and commonly using memories used in scaling processing in the vertical direction and finally, color space conversion or inverse gamma processing is performed by using a picture quality improving unit 8 thereby converting the picture signals into picture signals S6 having a predetermined format.

Abstract: The present invention proves a method and apparatus for manufacturing a polysilicon TFT without a defective activated area in a channel region below a gate. According to the instant invention, a dopant is implanted into a polysilicon thin film formed on an substrate with a gate having a tapered edge which is used as a mask to form a source and a drain. An energy beam then slantingly irradiates from the side of the edge of the gate to the surface of the substrate. Thus, the source and drain are activated and, at the same time, the energy beam streams into the polysilicon thin film below the edge of the gate to activate the channel region implanted the dopant.

Abstract: A thin film transistor is disclosed, that comprises a first substrate protection film formed on a transparent insulation substrate, a second substrate protection film formed in a predetermined shape on the first substrate protection film, a semiconductor film having a channel region and a contact region formed on the second substrate protection film, the channel region being surrounded by the contact region, a gate insulation film formed above the semiconductor film, the gate insulation film having an opening portion for the contact region of the semiconductor film, a gate electrode formed in a region corresponding to the channel region of the semiconductor film on the gate insulation film, an inter-layer insulation film formed above the gate electrode, the inter-layer insulation film having an opening portion for the contact region of the semiconductor film, and a plurality of electrodes formed on the inter-layer insulation film, the plurality of electrodes being connected to the contact region of the semico

Abstract: A thermoplastic resin stretched film laminate is described, which comprises a biaxially stretched thermoplastic resin film base layer having provided on one or both sides thereof a surface layer, the surface layer comprising a uniaxially stretched thermoplastic resin film containing 3 to 30% by weight of a petroleum resin, 30 to 65% by weight of precipitated calcium carbonate having a particle size of 0.1 to 3 .mu.m, and 32 to 67% by weight of a thermoplastic resin and having a thickness of not less than 2 .mu.m.

Abstract: A polycrystalline silicon active layer is provided on a transparent insulating substrate. Phosphorus is ion-implanted into the active layer, to form a pair of n-type source/drain regions with a base region interposed therebetween. In this ion-implantation, a density gradient of phosphorus is formed in the thicknesses direction of the active layer. Boron is ion-implanted into each of the source/drain regions, to be adjacent to the base region. In this ion-implantation, a density gradient of boron is formed, and the position providing a maximum density of boron is set to be deeper than the position which provides a maximum density of phosphorus. By the ion-implantation of boron, an n-type LDD portion having a high resistance and a p-type portion are formed on the upper and lower sides, respectively, adjacent to the base region within each of the source/drain regions.

Abstract: A thin-film transistor device comprising a pixel section including a plurality of pixel electrodes arranged in rows and columns on a substrate and a plurality of thin-film transistors of reverse stagger type, connected as switching elements to the pixel electrodes, respectively, and a drive section including a plurality of thin-film transistors of coplanar type, each having a gate insulating film, for driving the thin-film transistors of the reverse stagger type. A lower insulating film is located beneath the thin-film transistors of the reverse stagger type. The lower insulating film and the gate insulating films of the thin-film transistors of the coplanar type are formed of a first insulating film provided on the substrate.

Abstract: A white resin film having microvoids is disclosed, which is obtained by stretching a thermoplastic resin film comprising (a) from 40 to 65% by weight of a polypropylene resin, (b) from 1 to 20% by weight of ground calcium carbonate having a particle size of from 1 to 6 .mu.m and a specific surface area of from 10,000 to 34,800 cm.sup.2 /g, and (c) from 30 to 50% by weight of precipitated calcium carbonate having a particle size of not smaller than 0.5 .mu.m and a specific surface area of from 35,000 to 50,000 cm.sup.2 /g so as to have a void volume of from 20 to 70%. The film exhibits satisfactory printability in terms of whiteness and ink drying properties.

Abstract: An inverted stagger thin film transistor includes an insulating substrate, a silicon active layer formed thereon, source and drain ohmic contact layers, source and drain electrodes respectively contacting the source and drain ohmic contact layers, and a gate electrode opposite to the channel region of the active layer through a gate insulating film. An auxiliary film consisting of a silicon film doped with nitrogen is formed in the surface of the active layer, and the ohmic contact layers contact the auxiliary film. The auxiliary film can be continuously formed from the active layer to the ohmic contact layers, thereby improving a junction state between the active layer and the ohmic contact layers.