Abstract: There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.

Abstract: A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

Abstract: A method for manufacturing thin-film transistor comprises steps of sequentially forming in laminar state a gate film, an insulating film and a conductive film having a transparent electrode film and an amorphous silicon film added with an impurity thereto on the top surface of glass substrate or layer; irradiating ultraviolet ray from the bottom surface side of the substrate to expose negative photoresist film on said conductive film and to etch the same; and forming an amorphous semiconductive film on the structure. In this manner, source and drain electrodes are respectively self-aligned with the gate electrode and contacted therewith through a semiconductive film and a low resistive and semiconductor film.

Abstract: A thin-film transistor circuit used to drive a liquid crystal display device is disclosed, which circuit includes a plurality of circuit components which are arranged in the form of a matrix as to be connected with data lines for supplying an image signal and with address lines for supplying a gate pulse signal, whereby the circuit components control the picture element display in the unit picture element region of the LCD device. Each circuit component has a capacitor connected to the unit picture element region for temporarily storing the image signal, and a TFT transfer gate having a gate electrode connected to one of the address lines, a source electrode connected to one of the data lines, and a drain electrode connected to the capacitor. The transfer gate performs the switching operation in response to the gate pulse signal, thereby transferring the image signal to the capacitor.