Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: An electronic contact lens. In some embodiments, the electronic contact lens includes: a receiver, including: a voltage-controlled oscillator; a phase-alignment circuit, connected to a control input of the voltage-controlled oscillator; and an offset-compensating circuit, connected to the control input of the voltage-controlled oscillator, the receiver being configured: to operate in: a calibration mode, or an operating mode; and to select, in the calibration mode, an operating-mode setting of the offset-compensating circuit, the selecting including: adjusting the offset-compensating circuit, and monitoring an output frequency of the voltage-controlled oscillator.

Abstract: An electronic contact lens. In some embodiments, the electronic contact lens includes: a power management circuit; and a first cell, the power management circuit including an active switch, the active switch being configured to isolate the first cell from other contact lens elements when the power management circuit is powered down.

Abstract: An electronic contact lens. In some embodiments, the electronic contact lens includes a plurality of power-consuming circuits and a power supply circuit. The power supply circuit may be configured to distribute available power among two voltage domains in the electronic contact lens according to changing power requirements within the two voltage domains.

Abstract: A contact lens battery management system (BMS) monitors battery health in an electronic contact lens. A battery made with high-internal-resistance cells is coupled on a cell-by-cell basis to input switches of a power management integrated circuit (PMIC) that monitors, detects, and isolates faulty circuit components.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: An electronic contact lens. In some embodiments, the electronic contact lens includes a plurality of power-consuming circuits and a power supply circuit. The power supply circuit may be configured to distribute available power among two voltage domains in the electronic contact lens according to changing power requirements within the two voltage domains.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A contact lens battery management system (BMS) monitors battery health in an electronic contact lens. A battery made with high-internal-resistance cells is coupled on a cell-by-cell basis to input switches of a power management integrated circuit (PMIC) that monitors, detects, and isolates faulty circuit components.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A circuit for duty cycle detection and correction, for a serial data transmitter. The circuit includes a pattern generator having a pattern data output configured to be selectively connected to the data input of the serial data transmitter, and a duty cycle detection circuit, connected to the output of the serial data transmitter. The pattern generator is configured to produce a pattern including a sequence including an odd number of consecutive zeros and a same number of consecutive ones. The duty cycle detection circuit is configured to measure a difference between a first interval and a second interval, in a signal at the output of the serial data transmitter, the first interval corresponding to the odd number of consecutive zeros within the sequence and the second interval corresponding to the odd number of consecutive ones within the sequence.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A phase-locked loop circuit comprises a multi-phase oscillator having a plurality of coupled oscillators. A calibration module detects mismatches between frequency characteristics of the different oscillators in the phase-locked loop circuit during a calibration process. The calibration module then calibrates the various oscillators to compensate for the detected mismatch. Once calibrated, the phase-locked loop circuit can operate with little or no performance degradation despite the mismatch in frequency characteristics between the different oscillators.

Abstract: A two-stage decision feedback equalizer. The decision feedback equalizer is configured to receive serial data, at an analog input, at a first data rate. The two-stage decision feedback equalizer has an analog input and four digital outputs, and includes a first stage and a second stage. The first stage is connected to the analog input, and includes a half-rate predictive decision feedback equalizer consisting of current mode logic circuits. The second stage is connected to the first stage, and consists of complementary metal oxide semiconductor circuits.

Abstract: A two-stage decision feedback equalizer. The decision feedback equalizer is configured to receive serial data, at an analog input, at a first data rate. The two-stage decision feedback equalizer has an analog input and four digital outputs, and includes a first stage and a second stage. The first stage is connected to the analog input, and includes a half-rate predictive decision feedback equalizer consisting of current mode logic circuits. The second stage is connected to the first stage, and consists of complementary metal oxide semiconductor circuits.

Abstract: A circuit for duty cycle detection and correction, for a serial data transmitter. The circuit includes a pattern generator having a pattern data output configured to be selectively connected to the data input of the serial data transmitter, and a duty cycle detection circuit, connected to the output of the serial data transmitter. The pattern generator is configured to produce a pattern including a sequence including an odd number of consecutive zeros and a same number of consecutive ones. The duty cycle detection circuit is configured to measure a difference between a first interval and a second interval, in a signal at the output of the serial data transmitter, the first interval corresponding to the odd number of consecutive zeros within the sequence and the second interval corresponding to the odd number of consecutive ones within the sequence.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: An on-chip scope and a method for operating the on-chip scope. The on-chip scope includes a provision for operating in one of two states, the effects of voltage offsets being different in the two states. A first voltage is measured in the first state, a second voltage is measured in the second state, and the two measurements are combined to generate a voltage estimate in which the effects of voltage offsets are reduced.

Abstract: An on-chip scope and a method for operating the on-chip scope. The on-chip scope includes a provision for operating in one of two states, the effects of voltage offsets being different in the two states. A first voltage is measured in the first state, a second voltage is measured in the second state, and the two measurements are combined to generate a voltage estimate in which the effects of voltage offsets are reduced.