Patents by Inventor Moungi G. Bawendi

Moungi G. Bawendi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanocrystals including III-V semiconductors
    Patent number: 8748933
    Abstract: Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: June 10, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Sang-wook Kim, John P. Zimmer
  • Non-volatile memory device including semiconductor charge-trapping material particles
    Patent number: 8664640
    Abstract: A memory device can include an active layer that has a selectable lateral conductivity. The layer can include a plurality of nanoparticles.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: March 4, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Vladimir Bulović, Seth A. Coe-Sullivan
  • Photovoltaic Device Including Semiconductor Nanocrystals
    Publication number: 20140035077
    Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: August 30, 2013
    Publication date: February 6, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Alexi Arango, Vladmir Bulovic, Vanessa Wood, Moungi G. Bawendi
  • LIGHT EMITTING MATERIAL
    Publication number: 20140027680
    Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
    Type: Application
    Filed: July 4, 2013
    Publication date: January 30, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. HALPERT, Jonathan TISCHLER, Moungi G. BAWENDI, Vladimir BULOVIC
  • OPTICAL STRUCTURES INCLUDING NANOCRYSTALS
    Publication number: 20140009955
    Abstract: An optical structure can include a nanocrystal on a surface of an optical waveguide in a manner to couple the nanocrystal to the optical field of light propagating through the optical waveguide to generate an emission from the nanocrystal.
    Type: Application
    Filed: June 24, 2013
    Publication date: January 9, 2014
    Inventors: Vladimir Bulovic, Ioannis Kymissis, Moungi G. Bawendi, Jonathan R. Tischler, Michael Scott Bradley, David Oertel, Jennifer Yu
  • MULTIFUNCTIONAL NANOPARTICLES
    Publication number: 20130259808
    Abstract: Multifunctional nanoparticles can include two or more different populations of nanocrystals that impart a combination of properties arising from the constituent populations in a single, multifunctional nanoparticle.
    Type: Application
    Filed: March 28, 2013
    Publication date: October 3, 2013
    Inventors: Ou Chen, Moungi G. Bawendi
  • Blue light emitting semiconductor nanocrystal materials
    Patent number: 8541810
    Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: September 24, 2013
    Assignee: Massachusettts Institute of Technology
    Inventors: Jonathan S. Steckel, John P. Zimmer, Seth Coe-Sullivan, Nathan E. Stott, Vladimir Bulović, Moungi G. Bawendi
  • Highly Luminescent Color-Selective Nanocrystalline Materials
    Publication number: 20130240788
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: May 9, 2013
    Publication date: September 19, 2013
    Applicant: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • SEMICONDUCTOR NANOCRYSTALS
    Publication number: 20130240787
    Abstract: A method of making a nanocrystal includes slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core.
    Type: Application
    Filed: March 15, 2012
    Publication date: September 19, 2013
    Inventors: Ou Chen, Moungi G. Bawendi
  • Materials including semiconductor nanocrystals
    Patent number: 8535758
    Abstract: A composition includes a layer of nanoparticles and a layer of a second material.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: September 17, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Vladimir Bulovic, Seth Coe-Sullivan, Wing-Keung Woo, Moungi G. Bawendi
  • Light emitting device including semiconductor nanocrystals
    Patent number: 8536776
    Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: September 17, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Photovoltaic device including semiconductor nanocrystals
    Patent number: 8525303
    Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: June 25, 2007
    Date of Patent: September 3, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Alexi Arango, Vladimir Bulovic, Vanessa Wood, Moungi G. Bawendi
  • Multistage Nanoparticles
    Publication number: 20130224282
    Abstract: Multistage nanostructures, e.g., for delivery of agents such as imaging agents and therapeutic agents to tumor vasculature.
    Type: Application
    Filed: September 21, 2011
    Publication date: August 29, 2013
    Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY, The General Hospital Corporation
    Inventors: Cliff Wong, Moungi G. Bawendi, Triantafyllos Stylianopoulos, Rakesh K. Jain, Dai Fukumura
  • Materials including semiconductor nanocrystals
    Publication number: 20130216707
    Abstract: A composition includes a layer of nanoparticles and a layer of a second material.
    Type: Application
    Filed: December 19, 2007
    Publication date: August 22, 2013
    Applicant: Massachusetts Institute of Technology
    Inventors: Vladimir Bulovic, Seth A. Coe, Wing-Keung Woo, Moungi G. Bawendi
  • Highly Luminescent II-V Semiconductor Nanocrystals
    Publication number: 20130178047
    Abstract: A population of semiconductor nanocrystals can include cores including a II-V semiconductor material, e.g., Cd3As2. The population can be monodisperse and can have a quantum yield of 20% or greater. A size-series of populations can have emission wavelengths falling in the range of about 530 nm to about 2000 nm.
    Type: Application
    Filed: January 11, 2012
    Publication date: July 11, 2013
    Inventors: Daniel K. Harris, Moungi G. Bawendi
  • Stabilized semiconductor nanocrystals comprising a coating of polydentate ligand
    Patent number: 8481162
    Abstract: A semiconductor nanocrystal associated with a polydentate ligand. The polydentate ligand stabilizes the nanocrystal.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Sungjee Kim, Nathan E. Stott
  • Highly luminescent color-selective nanocrystalline materials
    Patent number: 8481113
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Highly luminescent color-selective nanocrystalline materials
    Patent number: 8481112
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Optical structures including nanocrystals
    Patent number: 8472758
    Abstract: An optical structure can include a nanocrystal on a surface of an optical waveguide in a manner to couple the nanocrystal to the optical field of light propagating through the optical waveguide to generate an emission from the nanocrystal.
    Type: Grant
    Filed: May 21, 2007
    Date of Patent: June 25, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Vladimir Bulovic, Ioannis Kymissis, Moungi G. Bawendi, Jonathan R. Tischler, Michael Scott Bradley, David Oertel, Jennifer Yu
  • Color selective photodetector and methods of making
    Patent number: 8399939
    Abstract: A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: March 19, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian J. Walker, August Dorn, Vladimir Bulovic, Moungi G. Bawendi