Patents by Inventor Mrinal K. Das
Mrinal K. Das has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888392Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.Type: GrantFiled: April 17, 2020Date of Patent: January 30, 2024Assignee: Wolfspeed, Inc.Inventors: Mrinal K. Das, Adam Barkley, Henry Lin, Marcelo Schupbach
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Patent number: 11171229Abstract: The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.Type: GrantFiled: April 10, 2017Date of Patent: November 9, 2021Assignee: Cree, Inc.Inventors: Mrinal K. Das, Robert J. Callanan, Henry Lin, John Williams Palmour
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Publication number: 20200244164Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.Type: ApplicationFiled: April 17, 2020Publication date: July 30, 2020Inventors: Mrinal K. Das, Adam Barkley, Henry Lin, Marcelo Schupbach
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Patent number: 10707858Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.Type: GrantFiled: May 15, 2018Date of Patent: July 7, 2020Assignee: Cree, Inc.Inventors: Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan Young, Van Mieczkowski, Scott Allen
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Patent number: 10680518Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.Type: GrantFiled: February 29, 2016Date of Patent: June 9, 2020Assignee: Cree, Inc.Inventors: Mrinal K. Das, Adam Barkley, Henry Lin, Marcelo Schupbach
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Publication number: 20200177079Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.Type: ApplicationFiled: February 7, 2020Publication date: June 4, 2020Inventors: Mrinal K. Das, Adam Barkley, Henry Lin, Marcelo Schupbach
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Patent number: 10141302Abstract: A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.Type: GrantFiled: March 22, 2016Date of Patent: November 27, 2018Assignee: Cree, Inc.Inventors: Mrinal K. Das, Henry Lin, Marcelo Schupbach, John Williams Palmour
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Publication number: 20180331679Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Inventors: Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan Young, Van Mieczkowski, Scott Allen
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Patent number: 9998109Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.Type: GrantFiled: May 15, 2017Date of Patent: June 12, 2018Assignee: Cree, Inc.Inventors: Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan Young, Van Mieczkowski, Scott Allen
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Publication number: 20170213811Abstract: The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: Mrinal K. Das, Robert J. Callanan, Henry Lin, John Williams Palmour
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Patent number: 9640617Abstract: The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.Type: GrantFiled: May 14, 2013Date of Patent: May 2, 2017Assignee: Cree, Inc.Inventors: Mrinal K. Das, Robert J. Callanan, Henry Lin, John Williams Palmour
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Publication number: 20160276927Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.Type: ApplicationFiled: February 29, 2016Publication date: September 22, 2016Inventors: Mrinal K. Das, Adam Barkley, Henry Lin, Marcelo Schupbach
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Publication number: 20160204101Abstract: A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.Type: ApplicationFiled: March 22, 2016Publication date: July 14, 2016Inventors: Mrinal K. Das, Henry Lin, Marcelo Schupbach, John Williams Palmour
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Patent number: 9373617Abstract: A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.Type: GrantFiled: May 15, 2014Date of Patent: June 21, 2016Assignee: Cree, Inc.Inventors: Mrinal K. Das, Henry Lin, Marcelo Schupbach, John Williams Palmour
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Patent number: 9142663Abstract: Methods of forming silicon carbide power devices are provided. An n? silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n? silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n? region is provided on the channel region and a portion of the n? region is removed from the channel region so that a portion of the n? region remains on the channel region to provide a reduction in a surface roughness of the channel region.Type: GrantFiled: September 10, 2014Date of Patent: September 22, 2015Assignee: Cree, Inc.Inventors: Mrinal K. Das, Michael Laughner
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Publication number: 20150028354Abstract: Methods of forming silicon carbide power devices are provided. An n? silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n? silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n? region is provided on the channel region and a portion of the n? region is removed from the channel region so that a portion of the n? region remains on the channel region to provide a reduction in a surface roughness of the channel region.Type: ApplicationFiled: September 10, 2014Publication date: January 29, 2015Inventors: Mrinal K. Das, Michael Laughner
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Patent number: 8859366Abstract: Methods of forming silicon carbide power devices are provided. An n? silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n? silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n? region is provided on the channel region and a portion of the n? region is removed from the channel region so that a portion of the n? region remains on the channel region to provide a reduction in a surface roughness of the channel region.Type: GrantFiled: May 14, 2012Date of Patent: October 14, 2014Assignee: Cree, Inc.Inventors: Mrinal K. Das, Michael Laughner
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Publication number: 20140246681Abstract: A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: Cree, Inc.Inventors: Mrinal K. Das, Henry Lin, Marcelo Schupbach, John Williams Palmour
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Patent number: 8618553Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.Type: GrantFiled: August 30, 2010Date of Patent: December 31, 2013Assignee: Cree, Inc.Inventors: Calvin H. Carter, Jr., Jason R. Jenny, David P. Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das
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Publication number: 20130248883Abstract: The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.Type: ApplicationFiled: May 14, 2013Publication date: September 26, 2013Applicant: Cree, Inc.Inventors: Mrinal K. Das, Robert J. Callanan, Henry Lin