Abstract: A semiconductor memory device includes a mold structure including gate electrodes stacked on a first substrate, a channel structure that penetrates a first region of the mold structure to cross the gate electrodes, a first through structure that penetrates a second region of the mold structure, and a second through structure that penetrates a third region of the mold structure. The mold structure further includes memory cell blocks extending in a first direction and spaced apart in a second direction, and a dummy block extending in the first direction and disposed between the memory cell blocks. Each of the memory cell blocks and the dummy block includes a cell region and an extension region arranged in the first direction. The first region is the cell region of one of the memory cell blocks, the second region is the extension region of the one of the memory cell blocks, and the third region is the extension region of the dummy block.

Abstract: Cathodes and lithium secondary batteries including the cathodes are disclosed. In some implementations, a cathode may include a cathode current collector and a cathode active material layer disposed on the cathode current collector and including cathode active material particles such that the cathode active material layer satisfies a specific equation. The cathode active material particles may include lithium metal oxide particles that include nickel, and may have a mole fraction of cobalt of 0.02 or less with respect to all elements except for lithium and oxygen.

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes a cathode active material and a conductive material ID/IG is in a range from 0.5 to 1.25 in a Raman spectrum of the cathode active material layer. The cathode active material includes lithium metal oxide particles containing nickel and manganese and having a content of cobalt of less than 2 mol % among all elements except for lithium and oxygen.

Abstract: Proposed are a process fluid treatment apparatus capable of decomposing ozone in a process fluid more effectively, and a wafer cleaning apparatus and semiconductor manufacturing equipment including the same. The process fluid treatment apparatus treats the process fluid used for cleaning a wafer in the semiconductor manufacturing equipment, and includes a housing having an inner space configured to contain the process fluid, a spray nozzle configured to spray the process fluid containing ozone into the inner space in the form of mist, and a nozzle heater configured to heat the process fluid passing through the spray nozzle.

Abstract: A display device includes a substrate; a light-emitting element layer on the substrate; a first thin-film encapsulation layer that is on the light-emitting element layer, has an upper surface conforming an upper surface of the light-emitting element layer, and includes a recessed portion; a bank layer on the first thin-film encapsulation layer and having an opening overlapping the recessed portion; a wavelength conversion layer in the opening on the first thin-film encapsulation layer and at least partially in the recessed portion; a first inorganic layer on the bank layer and the wavelength conversion layer; an organic layer on the first inorganic layer; and a second inorganic layer on the organic layer.

Abstract: A panel transfer tray according to an embodiment includes an accommodation part which accommodates a target panel, a protrusion protruding upward direction from an upper edge of the accommodation part, and a first movement prevention member disposed at one side of the accommodation part and disposed adjacent to the protrusion, and the first movement prevention member has a stair shape of which a planar area gradually decreases along the upward direction.

Abstract: The present disclosure relates to a data driving device, a data processing device, and a system for driving a display device and, more particularly, it relates to a data driving device, a data processing device, and a system for smoothly performing a low-speed communication through a communication line including an alternating current coupling capacitor.

Abstract: A mold structure includes gate electrodes stacked on a first substrate, a channel structure penetrating a first region of the mold structure to cross the gate electrodes, a first through structure penetrating a second region of the mold structure, and a second through structure penetrating a third region of the mold structure. The mold structure includes memory cell blocks extending in a first direction and spaced apart in a second direction, and a dummy block extending in the first direction and disposed between the memory cell blocks. Each of the memory cell and dummy blocks includes a cell region and an extension region arranged in the first direction. The first region is the cell region of one of the memory cell blocks, the second region is the extension region of the one of the memory cell blocks, and the third region is the extension region of the dummy block.

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes cathode active material particles. The cathode active material particles include a lithium metal oxide particle containing nickel and having a mole fraction of cobalt of 0.02 or less among all elements except lithium and oxygen.

Abstract: A method and electronic device for executing application concurrently with other devices are provided. An address of an external electronic device and a location of an application is obtained. A connection is established with a device using a short-range communication protocol. The application is obtained and executed in conjunction with the device.

Abstract: A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

Abstract: The present disclosure relates to a data driving device, a data processing device, and a system for driving a display device and, more particularly, it relates to a data driving device, a data processing device, and a system for smoothly performing a low-speed communication through a communication line including an alternating current coupling capacitor.

Abstract: A window includes a window base layer, a high refractive layer disposed on the window base layer, a low refractive layer including hollow silica particles and disposed on the high refractive layer, and a primer coating layer disposed on the low refractive layer. Each of the low refractive layer and the primer coating layer has a refractive index in a range of about 1.4 to about 1.46. The low refractive layer has a thickness in a range of about 50 nm to about 80 nm.

Abstract: A lithium secondary battery includes a cathode, a separator, and an anode including an anode current collector and an anode active material layer formed on the anode current collector and facing the cathode with the separator interposed therebetween. The anode active material layer includes a first anode active material layer formed on the anode current collector and including a first anode active material and a first anode binder containing a styrene-butadiene-based rubber (SBR) binder and a second anode active material layer formed on the first anode active material layer and including a second anode active material and a second anode binder containing a acryl-based binder. Each of the first anode active material and the second anode active material includes a silicon-based active material and a graphite-based material and contains 2 to 9.5 parts by weight of silicon with respect to the 100 part by weight of the graphite-based active material.

Abstract: The present disclosure relates to a data driving device and a method of driving the data driving device and, more particularly, to a data driving device and a method of driving the same in which a tuning of a set value of an internal circuit is automatically performed.

Abstract: A method of distributedly storing data in a system comprising a plurality of edge nodes communicatively coupled to an end device and a central cloud. The method includes: receiving, by a first edge node, data transmitted by the end device; assigning, by the first edge node, a data tag to received data according to attributes of the received data and duplicating the received data to generate a tagged data copy; and transmitting, by the first edge node, the tagged data copy to at least one second edge node determined by a data distribution policy determined by the central cloud directly or through the central cloud, so that the at least one second edge node store the tagged data copy in a storage.

Abstract: The present disclosure relates to a method for preparing a metal catalyst deposited with a layer film by ALD process and a metal catalyst thereof. More specifically, the present disclosure is intended to inhibit sintering of catalyst particles to prevent activity decrease, thus stably maintaining high activity, and simultaneously, providing heat stability, by layer-by-layer deposition of a layer film with alternation of different inorganic films on the surface of a metal catalyst in an ALD process.

Abstract: The present disclosure provides a valve apparatus that prevents defects in the valve apparatus and prevents damage to the heat insulating material due to a cryogenic liquid fluid, and a semiconductor processing device including the same and a manufacturing method thereof.

Abstract: Provided is a substrate treating apparatus including: a fluid supply unit supplying a supercritical fluid to the treatment space, a plurality of components installed in the fluid supply line; and a detection member detecting whether or not metal particles are released from the component. The detection member includes: an upstream detection port connected to the fluid supply line upstream from a first component which is one of the plurality of components; a downstream detection port connected to the fluid supply line downstream from the first component; and a detector provided to be coupled to a selected detection port between the upstream detection port and the downstream detection port, and detecting metal particles from a fluid flowing through the detection port from the fluid supply line.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a treating fluid to the inner space; and a fluid exhaust unit configured to exhaust the treating fluid from the inner space, and wherein the fluid exhaust unit includes: an exhaust line connected to the chamber; and a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space to a set pressure, and wherein the fluid supply unit includes: a fluid supply source; and a supply line provided between the fluid supply source and the chamber, and wherein at the supply line or the exhaust line a flow rate measuring member configured to measure a flow rate per unit time of the treating fluid flowing at the inner space is installed.