Patents by Inventor Nagarajan Raghavan

Nagarajan Raghavan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RRAM cell with bottom electrode(s) positioned in a semiconductor substrate
    Patent number: 9024286
    Abstract: Generally, the subject matter disclosed herein relates to the fabrication of an RRAM cell using CMOS compatible processes. A resistance random access memory device is disclosed which includes a semiconducting substrate, a top electrode, at least one metal silicide bottom electrode formed at least partially in the substrate, wherein at least a portion of the at least one bottom electrode is positioned below the top electrode, and at least one insulating layer positioned between the top electrode and at least a portion of the at least one bottom electrode.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: May 5, 2015
    Assignees: GLOBALFOUNDRIES Singapore PTE Ltd, Nanyang Technological University
    Inventors: Wenhu Liu, Kin-Leong Pey, Nagarajan Raghavan, Chee Mang Ng
  • RRAM CELL WITH BOTTOM ELECTRODE(S) POSITIONED IN A SEMICONDUCTOR SUBSTRATE
    Publication number: 20140077148
    Abstract: Generally, the subject matter disclosed herein relates to the fabrication of an RRAM cell using CMOS compatible processes. A resistance random access memory device is disclosed which includes a semiconducting substrate, a top electrode, at least one metal silicide bottom electrode formed at least partially in the substrate, wherein at least a portion of the at least one bottom electrode is positioned below the top electrode, and at least one insulating layer positioned between the top electrode and at least a portion of the at least one bottom electrode.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 20, 2014
    Applicants: Nanyang Technological University, Globalfoundries Singapore PTE Ltd
    Inventors: Wenhu Liu, Kin-Leong Pey, Nagarajan Raghavan, Chee Mang Ng
  • Fabrication of RRAM Cell Using CMOS Compatible Processes
    Publication number: 20120241710
    Abstract: Generally, the subject matter disclosed herein relates to the fabrication of an RRAM cell using CMOS compatible processes. A resistance random access memory device is disclosed which includes a semiconducting substrate, a top electrode, at least one metal silicide bottom electrode formed at least partially in the substrate, wherein at least a portion of the at least one bottom electrode is positioned below the top electrode, and at least one insulating layer positioned between the top electrode and at least a portion of the at least one bottom electrode.
    Type: Application
    Filed: March 21, 2011
    Publication date: September 27, 2012
    Applicants: NANYANG TECHNOLOGICAL UNIVERSITY, GLOBALFOUNDRIES SINGAPORE PTE LTD
    Inventors: Wenhu Liu, Kin-Leong Pey, Nagarajan Raghavan, Chee Mang Ng