Abstract: A semiconductor memory has a stacked bank structure and includes a data input/output pad; a global input/output line connected to the data input/output pad; and a plurality of banks connected to the global input/output line. Each bank is stacked on another one of the banks and shares a local input/output line corresponding to the global input/output line and a column select signal line to which a column select signal is applied. Accordingly, by providing a bank structure in which different banks are stacked, the number of global input/output lines, local input/output lines and write drivers (or input/output sense amps) are reduced.

Abstract: The present invention relates to a semiconductor memory device. When a device exits from power mode, after a time until an instruction/address receive control signal substantially turns on or off an address and instruction input buffer unit and a time until the address and instruction buffer unit is turned on to synchronize an external command signal to an internal clock signal are compensated for, an internal clock-generating control signal for controlling generation of the internal clock signal is sensed at a high phase of a buffered clock signal and is generated at a low phase of the buffered clock signal. Further, when a device enters power mode, an internal clock-generating control signal for controlling generation of an internal clock signal is sensed at a high phase of a buffered clock signal and is then generated at a low phase of the buffered clock signal.

Abstract: An improved driver and ODT impedance calibration techniques of a synchronous memory device are provided. The impedance calibration is performed by generating a calibration enable signal showing a calibration operation mode entry. The code signals for an ODT calibration are generated for every predetermined interval of time. A first control signal is generated based on the calibration enable signal. A final code signal of the sequentially generated code signals is latched by the first control signal to use as a driver and ODT impedance calibration signal.

Abstract: The disclosure is directed to an internal pulse generator outputting a signal with a constant pulse width nevertheless of a frequency of an input signal, including a first PMOS transistor, a PMOS second transistor and an NMOS transistor which are connected between a power supply voltage and a ground voltage in series, a latch and an inverter which are connected between an output terminal and a first node as a drain of the NMOS transistor, and a Y-time delay circuit connected between the output terminal and a second node that is a common gate of the PMOS and NMOS transistors.

Abstract: The disclosure is directed to an internal pulse generator outputting a signal with a constant pulse width nevertheless of a frequency of an input signal, including a first PMOS transistor, a PMOS second transistor and an NMOS transistor which are connected between a power supply voltage and a ground voltage in series, a latch and an inverter which are connected between an output terminal and a first node as a drain of the NMOS transistor, and a Y-time delay circuit connected between the output terminal and a second node that is a common gate of the PMOS and NMOS transistors.

Abstract: Disclosed is an on-die termination (‘ODT’) impedance calibration device. The ODT impedance calibration device comprises: a pulse generator for outputting a calibration signal of a pulse type for calibrating an ODT impedance; an M-bit counter for counting the number of pulses of the calibration signal; a first maximum counter trigger signal generator controlled by the M-bit counter; an N-bit counter for counting the number of pulses of the calibration signal; a second maximum counter trigger signal generator controlled by the N-bit counter; a delay unit for receiving a delay signal and outputting the delay signal after a predetermined period of time; an update trigger signal generator for outputting a pulse signal which is toggled according to an output signal of the delay unit; and an ODT impedance calibration unit for receiving the calibration signal and outputting a control signal for calibrating an ODT impedance.

Abstract: Disclosed are a DDR group (DDR I, DDR II, DDR III, . . . ) data output control device for controlling a time point of data output by using a DLL circuit and a method thereof. The data output control device includes a latch part for storing data read out from a memory cell array through a read operation, a control part for controlling an operation of the latch part, and an initialization signal generating part for generating an initialization signal for resetting an operation of the control part, wherein the initialization signal is synchronized with a clock signal generated from a DLL circuit in the memory device.

Abstract: Disclosed is a circuit for implementing a special mode in a packet-based semiconductor memory device, which performs the special mode in the same manner as a normal operation without changing the semiconductor memory devie from a special mode register to a control register mode prior to a normal operation or at the middle of the normal operation after an initial operation having a reset operation. A packet receiving part receives external packet data. A register controller generates a control signal to select a special mode register according to a value of a first field among the external packet data received by the packet receiving part. A register value generator generates a value of the special mode register selected by the control signal from the register controller according to a value of a second field among the received external packet data when the register controller generates the control signal.

Abstract: There is provided a synchronous memory device having a simplified data input unit for receiving and transferring data to an internal memory cell block, which is adapted to high frequency and can reduce a power consumption.

Abstract: An apparatus, for use in a semiconductor device, for providing a domain crossing operation. The apparatus includes a domain crossing sensing block, in response to an operation mode signal, first and second delay locked loop (DLL) clock signals and a CAS latency, generates a plurality of selection signals. An output enable signal generator, in response to the plurality of selection signals, generates a plurality of output enable signals. A data control block, in response to the output enable signals and the CAS latency, controls a data output operation in the semiconductor device. Each of a plurality of data align block, in response to the selection signals, the first and second DLL clock signals and an address signal, aligns data corresponding to the address signal in the data output operation.

Abstract: Disclosed is an on-die termination (‘ODT’) impedance calibration device. The ODT impedance calibration device comprises: a pulse generator for outputting a calibration signal of a pulse type for calibrating an ODT impedance; an M-bit counter for counting the number of pulses of the calibration signal; a first maximum counter trigger signal generator controlled by the M-bit counter; an N-bit counter for counting the number of pulses of the calibration signal; a second maximum counter trigger signal generator controlled by the N-bit counter; a delay unit for receiving a delay signal and outputting the delay signal after a predetermined period of time; an update trigger signal generator for outputting a pulse signal which is toggled according to an output signal of the delay unit; and an ODT impedance calibration unit for receiving the calibration signal and outputting a control signal for calibrating an ODT impedance.

Abstract: A domain crossing device for use in a semiconductor memory device, including: a unit for comparing a phase of an internal clock signal with a phase of a delay locked loop (DLL) clock signal to generate a first clock selection signal and a phase detection period signal in response to a detection starting signal and a second clock selection signal; a unit for generating a plurality of initial latency signals in response to the phase detection period signal, the detection starting signal and a column address strobe (CAS) latency signal; a unit for receiving the plurality of initial latency signals and the detection starting signal to generate a plurality of latency signals, a clock selection signal and the second clock selection signal; and a unit for generating the detection starting signal based on a self refresh signal, a power-up signal and a DLL disable signal.

Abstract: Disclosed is a Rambus DRAM capable of reducing power consumption and layout area by enabling data read/write control signal of accessed memory bank only, in a top memory bank and a bottom memory bank. The disclosed comprises: a top and a bottom memory bank blocks including a plurality of unit memory banks, respectively; and a data read/write control signal generation block for generating a top data write control signal and a top data read control signal to the top memory bank block and a bottom data write control signal and a bottom data read control signal to the bottom memory bank block, thereby controlling the top memory bank block and the bottom memory bank block to separately operate in data read/write operations.

Abstract: A circuit for controlling an initializing circuit in a semiconductor device is described herein. The circuit comprises a first circuit configured to generate a NOP operation command signal, and a second circuit configured to maintain a power-up signal to a LOW state until the NOP operation starts and to shift the power-up signal to a HIGH state based on the NOP operation command signal.

Abstract: There is provided a synchronous memory device having a simplified data input unit for receiving and transferring data to an internal memory cell block, which is adapted to high frequency and can reduce a power consumption.

Abstract: An apparatus, for use in a semiconductor device, for providing a domain crossing operation. The apparatus includes a domain crossing sensing block, in response to an operation mode signal, first and second delay locked loop (DLL) clock signals and a CAS latency, generates a plurality of selection signals. An output enable signal generator, in response to the plurality of selection signals, generates a plurality of output enable signals. A data control block, in response to the output enable signals and the CAS latency, controls a data output operation in the semiconductor device. Each of a plurality of data align block, in response to the selection signals, the first and second DLL clock signals and an address signal, aligns data corresponding to the address signal in the data output operation.

Abstract: A clock control circuit for a Rambus DRAM is provided which reduces power consumption by determining in advance whether an applied command is a read or current control command, and enabling a clock signal for externally outputting an internal data only during the read or current control command.

Abstract: A semiconductor memory device using a protocol transmission method, having an improved packet structure comprises a plurality of banks having N subregions which are simultaneously accessed by activation of one row, and a memory control unit capable of accessing a predetermined subregion of the N subregions according to a predetermined field value of packet.

Abstract: A circuit for controlling an initializing circuit in a semiconductor device is described herein. The circuit comprises a first circuit configured to generate a NOP operation command signal, and a second circuit configured to maintain a power-up signal to a LOW state until the NOP operation starts and to shift the power-up signal to a HIGH state based on the NOP operation command signal.

Abstract: The present invention relates to a packet command driving type memory device, comprises a first signal generating means for receiving a signal being generated from a register and generating a domain signal of certain bit; a second and a third signal generating means for generating a first and a second control signal for loading data; a fourth and a fifth signal generating means for generating a third and a fourth control signal for reading data from a core block; a data output shift part for shifting the data read from the core block according to the first and the second control signal generated from the second and a third signal generating means and a clock signal, delaying the shifted data by a certain time according to the domain signal generated from the first signal generating means according to each domain and compensating for a data output time and outputting it.