Abstract: A semiconductor memory device includes a first memory cell, a first select transistor between the first memory cell and a source line, a second select transistor between the first memory cell and a bit line, a third select transistor between the source line and the bit line, and a control circuit. During an erase operation, the control circuit is configured to apply a first voltage to the source line, apply a second voltage lower than the first voltage to a gate of the third select transistor while applying the first voltage to the source line to cause a third voltage to be applied to the bit line, and apply a fourth voltage lower than the third voltage to the gate of the second select transistor while the third voltage is applied to the bit line.

Abstract: A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Abstract: According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.

Abstract: A semiconductor memory device includes first and second memory blocks arranged along a first direction, a first bit line extending in the first direction and including first and second portions respectively through which the first and second memory blocks are connected to the first bit line, a first sense amplifier connected to the first bit line, a first wiring which extends in a second direction intersecting the first direction, and overlaps the second portion of the first bit line when viewed in a third direction intersecting the first and second directions, and a controller which applies a first voltage to the first bit line, and a second voltage to the first wiring during a read operation. A first distance between the first sense amplifier and the first portion is shorter than a second distance between the first sense amplifier and the second portion.

Abstract: A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Abstract: A semiconductor memory cell includes a memory cell, a word line and a source line both connected to the memory cell, and a control circuit. During a read operation on the memory cell, the control circuit applies a first voltage to the word line, applies a second voltage greater than the first voltage to the word line, and then applies a third voltage which is greater than the first voltage and smaller than the second voltage to the word line. During the read operation on the memory cell, the control circuit also applies a fourth voltage to the source line according to a timing at which the second voltage is applied to the word line, and then applies a fifth voltage smaller than the fourth voltage to the source line.

Abstract: According to one embodiment, a semiconductor storage device includes a memory cell and a memory cell connected to a word line, a first bit line BL connected to the memory cell, a second bit line BL connected to the memory cell, and a control circuit. The control circuit includes a first transistor provided between the first bit line and the node and including one end electrically connected to the node, and a second transistor provided between the second bit line and the node and including one end electrically connected to the node; the second transistor is provided adjacent to the first transistor; and the control circuit is configured to set one of the first transistor and the second transistor in an ON state while setting the other in an OFF state.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell array; a plurality of bit lines respectively connected to memory cells; a word line commonly connected to the memory cells; and a control circuit. The control circuit programs a first memory cell of a first state and a second memory cell of a second state by using a first program pulse. The control circuit applies a first voltage to a first bit line connected to the first memory cell, and applies a second voltage lower than the first voltage to a second bit line connected to the second memory cell at a first time within a first period during which the first program pulse is applied. The control circuit applies the second voltage to the first and second bit lines at a second time within the first period.

Abstract: According to one embodiment, a semiconductor storage device includes a memory cell and a memory cell connected to a word line, a first bit line BL connected to the memory cell, a second bit line BL connected to the memory cell, and a control circuit. The control circuit includes a first transistor provided between the first bit line and the node and including one end electrically connected to the node, and a second transistor provided between the second bit line and the node and including one end electrically connected to the node; the second transistor is provided adjacent to the first transistor; and the control circuit is configured to set one of the first transistor and the second transistor in an ON state while setting the other in an OFF state.

Abstract: A semiconductor memory cell includes a memory cell, a word line and a source line both connected to the memory cell, and a control circuit. During a read operation on the memory cell, the control circuit applies a first voltage to the word line, applies a second voltage greater than the first voltage to the word line, and then applies a third voltage which is greater than the first voltage and smaller than the second voltage to the word line. During the read operation on the memory cell, the control circuit also applies a fourth voltage to the source line according to a timing at which the second voltage is applied to the word line, and then applies a fifth voltage smaller than the fourth voltage to the source line.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array having a plurality of memory cells, a plurality of bit lines, each bit line being connected to one of the memory cells in the plurality of memory cells, and a word line commonly connected to the plurality of memory cells. A control circuit is configured to apply a program voltage to the word line and to change a voltage applied to a first bit line in the plurality of bit lines within a first period in which the program voltage is being applied to the word line.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell array; a plurality of bit lines respectively connected to memory cells; a word line commonly connected to the memory cells; and a control circuit. The control circuit programs a first memory cell of a first state and a second memory cell of a second state by using a first program pulse. The control circuit applies a first voltage to a first bit line connected to the first memory cell, and applies a second voltage lower than the first voltage to a second bit line connected to the second memory cell at a first time within a first period during which the first program pulse is applied. The control circuit applies the second voltage to the first and second bit lines at a second time within the first period.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array having a plurality of memory cells, a plurality of bit lines, each bit line being connected to one of the memory cells in the plurality of memory cells, and a word line commonly connected to the plurality of memory cells. A control circuit is configured to apply a program voltage to the word line and to change a voltage applied to a first bit line in the plurality of bit lines within a first period in which the program voltage is being applied to the word line.

Abstract: According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.

Abstract: According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.

Abstract: According to one embodiment, a semiconductor memory device includes a first transistor which includes a first end coupled to a first node, a second end, and a gate coupled to the second end. A second transistor includes a third end coupled to the first node, a fourth end, and a gate coupled to the fourth end. A third transistor is provided between a first bit line and a second node in a first sense amplifier. A selector is configured to supply a gate of the third transistor with one of a potential of the second end and a potential of the fourth end.

Abstract: A semiconductor storage device has a memory string including a memory cell, a bit line electrically connected to one end of the memory string, and a sense amplifier electrically connected to the bit line. The sense amplifier has a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node, a second transistor electrically connected between the second node and a sense node, and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted.

Abstract: According to one embodiment, a semiconductor device includes: a first semiconductor chip including a first via and a second via; and a second semiconductor chip including a third via and a fourth via and being located above the first semiconductor chip. The first semiconductor chip includes: a first detector capable of coupling to the third via through the second and fourth vias; and a first current source configured to control an output current in accordance with a voltage of the third via detected by the first detector.

Abstract: According to one embodiment, a device includes a memory cell array including memory cells and controller. The controller executes verification of second data in a first verify period in a first verify operation and verification of third data in a second verify period in the first verify operation. The controller excludes memory cells to be written first data from a target of the first verify operation at a first time in the first verify period and excludes memory cells to be written the second data from the target at a second time in the second verify period.

Abstract: According to one embodiment, a semiconductor device includes: a first semiconductor chip including a first via and a second via; and a second semiconductor chip including a third via and a fourth via and being located above the first semiconductor chip. The first semiconductor chip includes: a first detector capable of coupling to the third via through the second and fourth vias; and a first current source configured to control an output current in accordance with a voltage of the third via detected by the first detector.