Patents by Inventor Naoki Hirose
Naoki Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6756670Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.Type: GrantFiled: October 30, 2000Date of Patent: June 29, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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Patent number: 6677001Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.Type: GrantFiled: June 6, 1995Date of Patent: January 13, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inujima, Naoki Hirose, Mamoru Tashiro, Shunpei Yamazaki
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Publication number: 20030140941Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: ApplicationFiled: January 10, 2003Publication date: July 31, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 6520189Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: September 17, 1999Date of Patent: February 18, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Publication number: 20030021910Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the, center position of the vacuum chamber.Type: ApplicationFiled: July 8, 2002Publication date: January 30, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6423383Abstract: A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.Type: GrantFiled: November 20, 1998Date of Patent: July 23, 2002Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6217661Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: November 20, 1998Date of Patent: April 17, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 6191492Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.Type: GrantFiled: December 6, 1993Date of Patent: February 20, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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Patent number: 6176586Abstract: A projection display apparatus has at least two dichroic reflecting surfaces, a wavelength plate, a polarizing beam splitter, and two reflection-type liquid crystal display devices. The first dichroic reflecting surface separates a polarized light beam into light beams of two different wavelength ranges. The wavelength plate rotates the polarization plane of the light beam of the first wavelength range. The second dichroic reflecting surface integrates together the light beam of the first wavelength range after the rotation of its polarization plane and the light beam of the second wavelength range. The polarizing beam splitter reflects one and transmits the other of the light beams of the first and second wavelength ranges after the integration by the second dichroic reflecting surface. The reflection-type liquid crystal display devices modulate and reflect the light beams reflected from and transmitted through the polarizing beam splitter, respectively.Type: GrantFiled: March 23, 1999Date of Patent: January 23, 2001Assignee: Minolta Co., Ltd.Inventors: Naoki Hirose, Kohtaro Hayashi
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Patent number: 6013338Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: November 10, 1998Date of Patent: January 11, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5858259Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: July 14, 1997Date of Patent: January 12, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5855970Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: December 18, 1996Date of Patent: January 5, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5685913Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: November 29, 1993Date of Patent: November 11, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5629245Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: January 23, 1995Date of Patent: May 13, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5427824Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: September 8, 1992Date of Patent: June 27, 1995Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5302226Abstract: A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.Type: GrantFiled: May 29, 1992Date of Patent: April 12, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Naoki Hirose, Masaya Kadono, Kenji Itoh, Toru Takayama, Yasuyuki Arai, Noriya Ishida
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Patent number: 5225367Abstract: A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed in a vacuum or a non-oxidizing atmosphere.Type: GrantFiled: August 15, 1990Date of Patent: July 6, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kenji Itoh, Masaya Kadono, Naoki Hirose
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Patent number: 5203959Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.Type: GrantFiled: September 27, 1991Date of Patent: April 20, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
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Patent number: 5196366Abstract: A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growing a single crystal from each center. The spaces separating these crystals are filled with an insulating material in order not to form short current paths therein. The top surfaces of the crystals are exposed in order to make contact with an upper electrode.Type: GrantFiled: August 15, 1990Date of Patent: March 23, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kenji Itoh, Masaya Kadono, Naoki Hirose
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Patent number: 5192995Abstract: An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.Type: GrantFiled: February 14, 1991Date of Patent: March 9, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunepi Yamazaki, Kazuo Urata, Itaru Koyama, Naoki Hirose