Abstract: A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.

Abstract: An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

Abstract: An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

Abstract: An electrophotographic photoconductor comprises an electroconductive substrate, an organic photoconductive layer formed on the electroconductive substrate, and a protective layer formed on the organic photoconductive layer, comprising carbon or a carbon-based material as its main component, in which the difference in the Vickers hardness between the organic photoconductive layer and the protective layer is 2500 Kg/mm.sup.2 or less, and the oxygen concentration at the interface or in the vicinity of the interface between the organic photoconductive layer and the protective layer is 1 atom % or less.

Abstract: Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

Abstract: An improved plasma chemical vapor reaction apparatus is described. The apparatus comprises a reaction chamber, a gas feeding system for introducing a reactive gas into the reaction chamber, Helmholtz coils for inducing a magnetic field in the reaction chamber, a microwave generator for inputting microwaves into the reaction chamber, a substrate holder for supporting a substrate to be treated in the reaction chamber. The substrate holder is located with respect to said magnetic field inducing means in order that the graduent vector of the strength of the magnetic field induced by the Helmoholts coils is directed toward the substrate in the vicinity of the surface of the substrate to be treated. By virtue of the magnetic field caracterized by such a gradient vector, the plasma gas in the reaction chamber is drifted toward the substrate.

Abstract: An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. The microwave generator consists of a lisitano coil which is capable of emitting a microwave in the TE.sub.011 mode. In the light of such a microwave, a high quality film can be deposited.

Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light source for photo CVD or a pair of electrode for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light or plasma evenly throughout the surfaces to be coated.

Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.

Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

Abstract: A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.

Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.

Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.