Abstract: A tire vulcanization system is configured to deliver a vulcanized tire carried out from a vulcanizer by a tire conveyance device to a PCI device at a first position, and attaches an upper lid. The PCI device mounted with the upper lid is moved from the first position to a second position by a PCI moving portion. The tire conveyance device is configured to receive the raw tire disposed above the PCI device moved to the second position and carry the raw tire into the vulcanizer.

Abstract: This invention relates to a method for manufacturing 9-ethyl-6,6-dimethyl-8-[4-(morpholin-4-yl)piperidin-1-yl]-11-oxo-6,11-dihydro-5H-benzo[b]carbazole-3-carbonitrile, and is industrially preferable, allowing an objective substance to be obtained in high yield more safely and easily than the conventional method.

Abstract: A tool stocker for holding a tool is equipped with a stocker-inclining member that inclines the tool stocker and also equipped with a mechanism that adjusts an attaching/detaching position at which an interchangeable tool is attached to and detached from a robot arm. The attaching/detaching position can be adjusted by using the tool stocker so as to fit moving paths of the robot arm appropriately.

Abstract: A tool stocker for holding a tool is equipped with a stocker-inclining member that inclines the tool stocker and also equipped with a mechanism that adjusts an attaching/detaching position at which an interchangeable tool is attached to and detached from a robot arm. The attaching/detaching position can be adjusted by using the tool stocker so as to fit moving paths of the robot arm appropriately.

Abstract: A film formation method controls with accuracy the thickness of a thin film formed on a film formation object. The film formation method includes a film formation step of heating a film formation source and forming a film on a film formation object while moving the film formation source and monitoring an amount of released vapors of the film forming material using a quartz oscillator for measurement, a control step of adjusting a heating temperature of the film formation source based on the monitored value of the quartz oscillator for measurement, and a calibration step of calibrating the monitored value of the quartz oscillator for measurement, using a quartz oscillator for calibration and the quartz oscillator for measurement. The calibration step is performed in a middle of the film formation step, after movement of the film formation source is started from a waiting position.

Abstract: Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object.

Abstract: A method of carrying out alignment between a substrate and a mask, each having respective alignment marks. Vibrations attic substrate in a direction of gravity are measured. An antiphase vibrational wave is calculated, based an data corresponding to the measured vibrations. The antiphase vibrational wave is applied to the substrate, thereby reducing the vibrations or the substrate. When the vibrations of the substrate in the direction of gravity fall within a predetermined value that is set in advance, images are taken of relative positions of the alignment marks provided on the substrate and the mask, respectively, from the substrate side, and corresponding data is produced. Based on the data corresponding to the obtained images, an amount of movement of one of the substrate and the mask is calculated in a horizontal direction. One of the substrate and the mask is moved, based on the calculated movement amount.

Abstract: Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained.

Abstract: Provided is a vacuum vapor deposition system, which enables a vapor deposition rate to be measured accurately and a film thickness to be controlled with higher accuracy. The vacuum vapor deposition system includes: a vacuum chamber; a substrate holding mechanism; a vapor depositing source; a film thickness sensor for monitoring; a control system including a temperature controller and a film thickness controller; and a film thickness sensor for calibration, in which a distance from one film thickness sensor whose measurement accuracy is to be enhanced, out of the film thickness sensor for monitoring and the film thickness sensor for calibration, to a center of the opening of the vapor depositing source, is smaller than a distance from another film thickness sensor to the center of the opening of the vapor depositing source.

Abstract: A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film is formed on an object, a film forming material is heated in the source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. A moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object is further provided, the moving part holds the quartz oscillator for measurement so that its relative position with respect to the film formation source is maintained, and the quartz oscillator for calibration is provided above the moving part when the moving part is at the film formation waiting position.

Abstract: Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object.

Abstract: A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film of a film forming material is formed on a film formation object, the film forming material is heated in the film formation source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the film formation object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. In the film formation apparatus, there are further provided a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object and a temperature control part for controlling a temperature of the quartz oscillator for measurement and a temperature of the quartz oscillator for calibration to be substantially the same.

Abstract: Provided is a vacuum vapor deposition system including: a vapor depositing source; a film thickness sensor for monitoring; and a film thickness sensor for calibration, in which a distance L1 from a center of an opening of the vapor depositing source to the film thickness sensor for calibration and a distance L2 from the center to the film thickness sensor for monitoring satisfy a relationship of L1?L2, and angle ?1 formed by a perpendicular line from the center of the opening of the vapor deposition source to a film formation surface of the substrate and a straight line connecting the center of the opening of the vapor depositing source to the film thickness sensor for calibration, and angle ?2 formed by the perpendicular line and a straight line connecting the center of the opening of the vapor depositing source to the film thickness sensor for monitoring satisfy a relationship of ?1??2.

Abstract: Provided are an alignment method and an alignment apparatus, in which the number of times to carry out alignment operation is reduced to reduce damage of a substrate and a mask and improve the productivity of evaporation using the mask. Vibrations in the direction of gravity of a substrate immediately after the substrate is brought in are measured by a laser vibrometer. Based on the obtained vibration data, a vibration control portion generates an antiphase vibrational wave. After the vibrational wave is applied to the substrate to reduce the vibrations of the substrate, the alignment between the substrate and a mask is carried out.

Abstract: Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained.

Abstract: There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through a transfer path into a recovery container. The vapor deposition system or the vapor deposition method is capable of reducing an amount of a vapor deposition material consumed without being deposited on an object not to be processed during non-vapor deposition.

Abstract: A vacuum deposition apparatus capable of enhancing the productivity of an organic electroluminescence device is realized. A first pipe is connected to a deposition source for evaporating an organic electroluminescence material, and two second pipes are directed to two film deposition objects comprised of substrates and masks, whereby an organic deposition film is formed. Vapor is released simultaneously from the deposition source to plural film deposition objects on different planes to deposit films, which promotes the reduction in film deposition time and the miniaturization of an apparatus.

Abstract: A vacuum deposition apparatus capable of enhancing the productivity of an organic electroluminescence device is realized. A first pipe is connected to a deposition source for evaporating an organic electroluminescence material, and two second pipes are directed to two film deposition objects comprised of substrates and masks, whereby an organic deposition film is formed. Vapor is released simultaneously from the deposition source to plural film deposition objects on different planes to deposit films, which promotes the reduction in film deposition time and the miniaturization of an apparatus.

Abstract: An object of the present invention is to reduce splash generated in a vapor deposition source and carry out vapor deposition at a stable, high vapor deposition speed. The vapor deposition according to the present invention is carried out by vertically stacking a plurality of doughnut-shaped flat plates in a crucible, mounting thin vapor deposition material on the doughnut-shaped flat plates, using heaters that surround the crucible to heat the vapor deposition material on the doughnut-shaped flat plates, allowing the vapor generated from the vapor deposition material to flow through a flow space A at each layer into a vertical flow path B, and discharging the vapor from an opening at the top of the flow path B toward a substrate to be deposited. The conductance of the flow space A is smaller than the conductance of the flow path B.

Abstract: Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained.