Patents by Inventor Narbeh Derhacobian
Narbeh Derhacobian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118577Abstract: An insulated glass unit includes, in part, a first window pane that includes an electrochromic coating, and a second window pane spaced away from the first window pane. The second window pane includes, in part, a multitude of antennas adapted to receive RF signals, a rectifying circuit adapted to convert the RF signals received by the multitude of planar antennas to a DC power, and a controller adapted to change an opacity of the electrochromic coating using the converted DC power.Type: ApplicationFiled: September 7, 2023Publication date: April 11, 2024Inventors: Behrooz Abiri, Narbeh Derhacobian
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Patent number: 10446747Abstract: A method can include, by operation of a controller circuit, writing data into a volatile memory portion formed in an integrated circuit substrate of a memory device. In response to first conditions, date can be written from the volatile memory portion into a nonvolatile memory portion formed in the same integrated circuit substrate as the volatile memory portion. The nonvolatile memory portion can store the data in two terminal memory elements re-programmable between at least two different resistance states.Type: GrantFiled: August 31, 2017Date of Patent: October 15, 2019Assignee: Adesto Technology CorporationInventors: Narbeh Derhacobian, Shane Charles Hollmer
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Patent number: 9570166Abstract: A memory devices and methods can use multiple sense operations to detect a state of memory elements in a marginal state. In some embodiments, an evaluation circuit can generates an output value for a memory element in response multiple sense results for the same memory element.Type: GrantFiled: December 16, 2014Date of Patent: February 14, 2017Assignee: Adesto Technologies CorporationInventors: Nad Edward Gilbert, Ishai Naveh, Narbeh Derhacobian
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Patent number: 9159414Abstract: An integrated circuit may can include a memory section that stores data in programmable impedance elements arranged at cross points of select lines and sub bit lines, groups of sub bit lines each being connected to a different main bit line, the elements being formed above a substrate surface.Type: GrantFiled: October 22, 2012Date of Patent: October 13, 2015Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Shane Charles Hollmer, John Dinh
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Patent number: 9007814Abstract: An integrated circuit (IC) device can include a plurality of memory cells with programmable impedance elements. A circuit can be configured to read a data value stored by an element of a memory cell by application of at least one read voltage pulse and at least one relaxation voltage pulse across the terminals of the element; wherein the read voltage pulse has a same polarity as a voltage used to program the element, the relaxation voltage pulse has a different polarity than the read voltage pulse, and neither the read or relaxation voltage pulses program the element to a particular impedance state.Type: GrantFiled: March 5, 2014Date of Patent: April 14, 2015Assignee: Adesto Technologies CorporationInventor: Narbeh Derhacobian
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Patent number: 8995173Abstract: A memory device can include a plurality of memory cells, each including a dynamic section configured to store data dynamically, and a programmable impedance section comprising at least one programmable element programmable between at least two different data states, the programmable impedance section configured to establish a data value stored by the dynamic section in response to a recall signal.Type: GrantFiled: September 4, 2012Date of Patent: March 31, 2015Assignee: Adesto Technologies CorporationInventor: Narbeh Derhacobian
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Patent number: 8947913Abstract: Integrated circuit (IC) devices are disclosed that include programmable impedance elements (elements) as data storage element. In some embodiments, IC devices can include latch circuit with one or more elements that establish a function of an associated circuit. In other embodiments, IC devices can include elements arranged in a cross-point array connected to control terminals of access devices. In still other embodiments, a memory device can include a programmable address decoder. Corresponding methods are also disclosed.Type: GrantFiled: May 24, 2011Date of Patent: February 3, 2015Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Ishai Naveh
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Patent number: 8913444Abstract: A memory devices and methods can use multiple sense operations to detect a state of memory elements in a marginal state. In some embodiments, an evaluation circuit can generates an output value for a memory element in response multiple sense results for the same memory element. In other embodiments, a memory device can include both standard and strong read operations, where strong read operations apply more energy to a selected memory element than a standard read operation.Type: GrantFiled: February 29, 2012Date of Patent: December 16, 2014Assignee: Adesto Technologies CorporationInventors: Nad Edward Gilbert, Ishai Naveh, Narbeh Derhacobian
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Patent number: 8822967Abstract: Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.Type: GrantFiled: March 28, 2012Date of Patent: September 2, 2014Assignee: Agate Logic, Inc.Inventors: Louis Charles Kordus, II, Antonietta Oliva, Narbeh Derhacobian, Vei-Han Chan
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Patent number: 8687403Abstract: An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least one resistive element programmable more than once between different resistance values. A memory device may also include variable impedance elements accessible by access bipolar junction transistors (BJTs) having at least a portion formed by a semiconductor layer formed over a substrate. A memory device may also include a plurality of memory elements that each includes a dielectric layer formed between a first and second electrode, the dielectric layer including a solid electrolyte with a soluble metal having a mobility less than that of silver in a germanium disulfide.Type: GrantFiled: June 10, 2011Date of Patent: April 1, 2014Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Shane Charles Hollmer, Ishai Naveh
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Patent number: 8675396Abstract: An integrated circuit (IC) device can include a memory array having memory elements formed with a solid ion conductor, the memory array programmable to provide portions with different response types; and a logic section comprising logic circuits configured to perform logic functions, the logic section being coupled to the memory array to store and read data values therefrom. A memory device can also have a plurality of access ports, each configurable to access any of the different portions of the memory array. A memory device can further include a read circuit configured to read data values from the different portions according to the response type of each portion.Type: GrantFiled: December 10, 2012Date of Patent: March 18, 2014Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Ishai Naveh, Shane Charles Hollmer
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Patent number: 8659926Abstract: Methods and circuits for CAM cells using PMCs are disclosed herein. In one embodiment, a BCAM cell can include: (i) a first PMC coupled to a first access transistor and a bit node, where the first access transistor is coupled to a true bit line; (ii) a second PMC cell coupled to a second access transistor and the bit node, where the second access transistor is coupled to a complement bit line, and the first and second access transistors are controllable by a word line; (iii) a program enable transistor coupled to the bit node, and configured to couple a program control voltage to the bit node when enabled; and (iv) a match indication transistor configured to discharge a match line in response to states of the true and complement bit lines relative to the bit node.Type: GrantFiled: October 9, 2012Date of Patent: February 25, 2014Assignee: Adesto Technologies CorporationInventor: Narbeh Derhacobian
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Patent number: 8331128Abstract: A memory device may include a plurality of memory cells each having elements with at least one solid ion conductor programmable between at least two different impedance states for at least two different data retention times, the plurality of memory cells being dividable into a plurality of portions, each portion being separately configurable for one of the data retention times.Type: GrantFiled: December 2, 2009Date of Patent: December 11, 2012Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Shane Charles Hollmer
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Patent number: 8320148Abstract: Methods and circuits for CAM cells using PMCs are disclosed herein. In one embodiment, a BCAM cell can include: (i) a first PMC coupled to a first access transistor and a bit node, where the first access transistor is coupled to a true bit line; (ii) a second PMC cell coupled to a second access transistor and the bit node, where the second access transistor is coupled to a complement bit line, and the first and second access transistors are controllable by a word line; (iii) a program enable transistor coupled to the bit node, and configured to couple a program control voltage to the bit node when enabled; and (iv) a match indication transistor configured to discharge a match line in response to states of the true and complement bit lines relative to the bit node.Type: GrantFiled: June 7, 2010Date of Patent: November 27, 2012Assignee: Adesto Technologies CorporationInventor: Narbeh Derhacobian
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Patent number: 8294488Abstract: An integrated circuit may include a plurality of sub bit line groups, each sub bit line group coupled to a different main bit line by a corresponding access device; and a plurality of programmable impedance elements arranged into element groups, each element group being coupled to a corresponding each sub bit line.Type: GrantFiled: April 26, 2010Date of Patent: October 23, 2012Assignee: Adesto Technologies CorporationInventors: Narbeh Derhacobian, Shane Charles Hollmer, John Dinh
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Publication number: 20120182794Abstract: Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.Type: ApplicationFiled: March 28, 2012Publication date: July 19, 2012Applicant: Agate Logic Inc.Inventors: Louis Charles Kordus, II, Antonietta Oliva, Narbeh Derhacobian, Vei-Han Chan
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Patent number: 8183551Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.Type: GrantFiled: November 3, 2005Date of Patent: May 22, 2012Assignee: Agale Logic, Inc.Inventors: Louis Charles Kordus, II, Antonietta Oliva, Narbeh Derhacobian, Vei-Han Chan
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Patent number: 7755389Abstract: Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.Type: GrantFiled: January 7, 2009Date of Patent: July 13, 2010Assignee: Agate Logic, Inc.Inventors: Colin Neal Murphy, Narbeh Derhacobian, Louis Charles Kordus, II, Antonietta Oliva, Vei-Han Chan, Thomas E. Stewart, Jr.
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Publication number: 20090134910Abstract: Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.Type: ApplicationFiled: January 7, 2009Publication date: May 28, 2009Inventors: Colin Neal Murphy, Narbeh Derhacobian, Louis Charles Kordus, II, Antonietta Oliva, Vei-Han Chan, Thomas E. Stewart, JR.
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Publication number: 20080206922Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device.Type: ApplicationFiled: May 7, 2008Publication date: August 28, 2008Inventors: Antonietta Oliva, Louis Charles Kordus, Narbeh Derhacobian, Vei-Han Chan, Thomas E. Stewart