Abstract: A midsole structure of a sole assembly for a shoe improves a ride feeling and stability of the midfoot portion of the sole assembly during running. The sole assembly 1? of the shoe includes an upper plate 3 formed of a hard elastic member disposed on an upper side of a midfoot region M, a lower midsole 15 formed of a soft elastic member disposed under the upper plate 3 at the midfoot region, wherein the lower midsole has a downwardly convexedly curved upper surface that forms a void S relative to the upper plate and contacts the upper plate at the front and rear ends of the midfoot portion, and an outsole. The outsole includes a midfoot outsole 6 with a ground contact surface arranged below the lower midsole at the midfoot region, a heel outsole 5 of a heel region H, and a forefoot outsole 7 of a forefoot region F, wherein these outsole members are all discrete and separate from one another in the longitudinal direction.

Abstract: An upper structure for a shoe includes an upper body and an outside upper member that overlaps the lateral side of the upper body to cover the foot's talus and that has a bottom edge portion fixedly attached to a bottom surface of the upper body. A rear end portion of the bottom edge portion is located rearwardly of the calcaneus load centerline. A rear edge portion of the outside upper member is separate from the upper body rearwardly of the talus. An instep edge portion of the outside upper member is connected to the shoelace. The upper structure includes a region that is expandable and contractible in a longitudinal direction. A top end of the region extends to the opening of the upper body, and a bottom end of the region is disposed in front of the calcaneus load centerline and below 55% of the foot's lateral ankle height.

Abstract: Disclosed is a test instrument for measuring an analyte in a liquid sample by a noble metal colloid aggregation measurement method. The test instrument involves a reaction chamber in which at least the liquid sample is to be reacted with a reagent, wherein the reagent is adhered on at least a part of a surface constituting the reaction chamber in a dried state, and the reagent enables the measurement of the analyte by a noble metal colloid aggregation measurement method.

Abstract: A shoe 1 of the present invention includes an upper 2 made of a stretchable fabric. The stretchable fabric is integrated with a sole 3 in a state of being stretched. Further, a method of manufacturing the shoe 1 of the present invention is a method of manufacturing a shoe using a stretchable fabric for the upper 2. The method includes steps of: producing an upper pattern using a last having a size smaller than that of the sole 3 as a base; producing the upper 2 with the stretchable fabric being stretched by stretching the upper pattern and fitting the upper pattern onto a last having a size that matches the sole 3; and integrating the upper 2 with the stretchable fabric being stretched with the sole 3.

Abstract: A sole structure 1 for a shoe comprises an upper sheet portion 2 disposed on the upper side of the sole structure, and a plurality of curved sheet portions 3 (31-35) that are provided on the lower surface of the upper sheet portion 2, that have downwardly convexedly curved portions 31-35, respectively, and that are disposed side by side and partially overlapped with each other in the longitudinal direction. Each of the curved sheet portions 31-35 has a first end A (A1-A5) and a second end B (B1-B5) on the opposite sides of each of the downwardly convexedly curved portions 31-35. The first end A of the curved sheet portion 3 is located on the front side of the sole structure 1 and fixed to the lower surface of the upper sheet portion 2. The second end B of the curved sheet portion 3 is located on the rear side of the sole structure 1 and fixed to the external surface of the adjacent curved sheet portion 3.

Abstract: A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions (3) and having a first impurity diffusion region and a second impurity diffusion region, a plurality of first electrodes (13) electrically connected to the first impurity diffusion region, a variable resistance layer (12) electrically connected to the first electrodes (13), and a plurality of second electrodes electrically connected to the variable resistance layer (12). Among the plurality of first electrodes (13) and the plurality of second electrodes, an array direction of at least one pair of the first electrodes (13) and the second electrodes that are electrically connected to the same variable resistance layer (12), and a direction of extension of the activation regions (3) are not parallel.

Abstract: An upper structure for a shoe includes an upper body and an outside upper member that overlaps the lateral side of the upper body to cover the foot's talus and that has a bottom edge portion fixedly attached to a bottom surface of the upper body. A rear end portion of the bottom edge portion is located rearwardly of the calcaneus load centerline. A rear edge portion of the outside upper member is separate from the upper body rearwardly of the talus. An instep edge portion of the outside upper member is connected to the shoelace. The upper structure includes a region that is expandable and contractible in a longitudinal direction. A top end of the region extends to the opening of the upper body, and a bottom end of the region is disposed in front of the calcaneus load centerline and below 55% of the foot's lateral ankle height.

Abstract: An upper structure for a shoe improves a fit of the heel portion during heel contact with the ground to the push off motion of a foot. The upper structure includes an upper body 30, and an outside upper member 31 that overlaps the lateral side of the upper body 30 to cover the talus T of the foot, and that has a bottom edge portion 31a fixedly attached to the bottom surface of the upper body 30. The rear end portion A of the bottom edge portion 31a is located rearwardly of the load centerline C of the calcaneus. A rear edge portion 31c of the outside upper member 31 is provided separately from the upper body 30 rearwardly of the talus T of the foot. An instep edge portion 31b of the outside upper member 31 is connected to the shoelace 4. On the lateral side of the heel portion of the upper body 30, there is a region 10 that is expandable and contractible in the longitudinal direction.

Abstract: The sole structure 1 has an upper plate, a lower midsole located under and fixedly attached to the upper plate, and having a laterally extending groove opening to the bottom side of the lower midsole, and a bending restriction member formed in a bent shape and spanning the groove longitudinally between the front edge and the rear edge of the opening of the groove. During the beginning phase of sole bending, the bending restriction member allows for the sole to bend till the bending restriction member gradually extends toward a straight shape from the bent shape and becomes taut between the front edge and the rear edge of the opening of the groove. During the advanced phase of the sole bending, when the bending restriction member experiences a force from the taut state, it functions so as to restrict the sole from bending.

Abstract: An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller.

Abstract: In the case of assaying the level of complex AB in a sample which likely contains the complex AB composed of substance A with another substance B, the complex is assayed by the competitive homogeneous assay method with the use of reagents including a reagent containing partner C specifically binding to substance A, a reagent containing partner D specifically binding to substance B, a reagent containing fine particles carrying substance A or an analogue thereof and substance B or an analogue thereof, and a reagent containing partner C specifically binding to substance A and partner D specifically binding to substance B. Thus, the complex in the sample can be easily assayed. The above method is applicable to general-purpose biochemical automatic analyzers.

Abstract: A midsole structure of a sole assembly for a shoe improves a ride feeling and stability of the midfoot portion of the sole assembly during running. The sole assembly 1? of the shoe includes an upper plate 3 formed of a hard elastic member disposed on an upper side of a midfoot region M, a lower midsole 15 formed of a soft elastic member disposed under the upper plate 3 at the midfoot region, wherein the lower midsole has a downwardly convexedly curved upper surface that forms a void S relative to the upper plate and contacts the upper plate at the front and rear ends of the midfoot portion, and an outsole. The outsole includes a midfoot outsole 6 with a ground contact surface arranged below the lower midsole at the midfoot region, a heel outsole 5 of a heel region H, and a forefoot outsole 7 of a forefoot region F, wherein these outsole members are all discrete and separate from one another in the longitudinal direction.

Abstract: A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.

Abstract: A midsole structure of a sole assembly for a shoe improves a ride feeling and stability of the midfoot portion of the sole assembly during running. The sole assembly 1 of the shoe includes an upper plate 3 disposed on an upper side of a midfoot portion M and formed of a hard elastic member, a lower plate 4 disposed under the upper plate 3, wherein the lower plate is formed of a hard elastic member and has a downwardly convexedly curved shape that forms a void S relative to the upper plate, a midfoot outsole 6 attached on a bottom surface 4a of the lower plate 4, having a ground contact surface 6a, and provided discretely in the longitudinal direction from an outsole 5 of a heel portion H and an outsole 7 of a forefoot portion F of the sole assembly 1, and connections 8, 9 provided on front and rear ends of the midfoot portion M and interconnecting the upper plate 3 with the lower plate 4 in the vertical direction.

Abstract: A semiconductor device includes an interlayer insulating film formed on a semiconductor substrate to cover a lower electrode, a side-wall insulating film formed on a side wall of a contact hole formed through the interlayer insulating film to a depth reaching the lower electrode, a heater formed in the interior of the contact hole defined by the side-wall insulating film, and a phase-change film in contact with the top surface of the heater. The heater is in contact with the lower electrode at the bottom surface within the contact hole, and the top surface thereof is located at a lower level than that of the top surface of the side-wall insulating film. The top surface of the heater is located at a lower level than the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.

Abstract: A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions (3) and having a first impurity diffusion region and a second impurity diffusion region, a plurality of first electrodes (13) electrically connected to the first impurity diffusion region, a variable resistance layer (12) electrically connected to the first electrodes (13), and a plurality of second electrodes electrically connected to the variable resistance layer (12). Among the plurality of first electrodes (13) and the plurality of second electrodes, an array direction of at least one pair of the first electrodes (13) and the second electrodes that are electrically connected to the same variable resistance layer (12), and a direction of extension of the activation regions (3) are not parallel.

Abstract: A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.

Abstract: A nonvolatile memory device has a first insulating layer, a variable resistance layer provided on the first insulating layer and having a variable resistance material, and a first electrode and second electrode electrically connected with the variable resistance layer. The variable resistance layer has a variable resistance region as a data storing region and a thickness-changing region continuously extending from the variable resistance region and gradually becoming thicker from the variable resistance region.

Abstract: A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.

Abstract: A sole structure 1 for a shoe comprises an upper sheet portion 2 disposed on the upper side of the sole structure, and a plurality of curved sheet portions 3 (31-35) that are provided on the lower surface of the upper sheet portion 2, that have downwardly convexedly curved portions 31-35, respectively, and that are disposed side by side and partially overlapped with each other in the longitudinal direction. Each of the curved sheet portions 31-35 has a first end A (A1-A5) and a second end B (B1-B5) on the opposite sides of each of the downwardly convexedly curved portions 31-35. The first end A of the curved sheet portion 3 is located on the front side of the sole structure 1 and fixed to the lower surface of the upper sheet portion 2. The second end B of the curved sheet portion 3 is located on the rear side of the sole structure 1 and fixed to the external surface of the adjacent curved sheet portion 3.