Abstract: A shoe 1 of the present invention includes an upper 2 made of a stretchable fabric. The stretchable fabric is integrated with a sole 3 in a state of being stretched. Further, a method of manufacturing the shoe 1 of the present invention is a method of manufacturing a shoe using a stretchable fabric for the upper 2. The method includes steps of: producing an upper pattern using a last having a size smaller than that of the sole 3 as a base; producing the upper 2 with the stretchable fabric being stretched by stretching the upper pattern and fitting the upper pattern onto a last having a size that matches the sole 3; and integrating the upper 2 with the stretchable fabric being stretched with the sole 3.

Abstract: A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13.

Abstract: In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not increased in volume even if the number of times of rewriting is increased. Since the volume of the phase change region is not changed, an electric current level required for rewriting is constant. Thus, the semiconductor device having a memory cell capable of carrying out stable rewriting is obtained.

Abstract: The object of the present invention is to provide a manufacturing method for a nonvolatile memory device including a variable resistance having a constricted shape. The nonvolatile memory device of the present invention has a storage section composed of two electrodes and a variable resistance sandwiched between the electrodes. The variable resistance is formed to a constricted shape between the electrodes.

Abstract: A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.

Abstract: An area where a lower electrode is in contact with a variable resistance material needs to be reduced in order to lower the power consumption of a variable resistance memory device. The present invention provides a method of producing a variable resistance memory element whereby the lower electrode can be more finely formed. The method of producing a semiconductor device according to the present invention includes forming a small opening by utilizing cubical expansion due to the oxidation of silicon. Thereby forming the lower electrode smaller than that can be formed by lithography techniques.

Abstract: An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller.

Abstract: In a semiconductor device including a heater electrode formed in a contact hole formed in an interlayer insulation film to expose a lower electrode, the heater electrode includes at least three heater electrode layers which are successively laminated and successively increased in specific resistivity in a direction from the lower electrode towards a phase change film in this order. The interlayer insulation film is formed on a semiconductor substrate to cover the lower electrode. The phase change film is formed in contact with an upper surface of the heater electrode. An upper electrode is formed on an upper surface of the phase change film.

Abstract: An upper structure for a shoe that improves a fit of the heel portion during heel contact with the ground to the push off motion of a foot. The upper structure includes an upper body 30, and an outside upper member 31 that overlaps the lateral side of the upper body 30 to cover the talus T of the foot and whose bottom side edge portion 31a is fixedly attached to the bottom surface of the upper body 30. The rear end portion A of the bottom side edge portion 31a of the outside upper member 31 is located at the rear of the load centerline C of the calcaneus and the rear side edge portion 31c of the outside upper member 31 is provided separately from the upper body 30 at the rear of the talus T of the foot. The instep side edge portion 31b of the outside upper member 31 is connected to the shoelace 4. On the lateral side of the heel portion of the upper body 30 is provided a region 10 that is expandable and contractible in the longitudinal direction.

Abstract: A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.

Abstract: A semiconductor device including a contact plug connected to a diffusion layer of a cell transistor, a heater electrode connected to a phase-change film, and a buffer plug connecting between the contact plug and the heater electrode.

Abstract: A midsole structure for a shoe which improves a ride feeling and stability of the midfoot portion of the sole assembly during running. The sole assembly 1 of the shoe includes the upper plate 3 disposed on the upper side of the midfoot portion M and formed of a hard elastic member, the lower plate 4 disposed under the upper plate 3 to form the void S with the upper plate 3, formed of a hard elastic member, and having a downwardly convexedly curved shape, the midfoot outsole 6 attached on the bottom surface 4a of the lower plate 4, having the ground contact surface 6a, and provided discretely in the longitudinal direction from the outsole 5 of the heel portion H and the outsole 7 of the forefoot portion F of the sole assembly 1, and the connections 8, 9 provided on the front and rear ends of the midfoot portion M and interconnecting the upper plate 3 with the lower plate 4 in the vertical direction.

Abstract: A semiconductor device includes an interlayer insulating film formed on a semiconductor substrate to cover a lower electrode, a side-wall insulating film formed on a side wall of a contact hole formed through the interlayer insulating film to a depth reaching the lower electrode, a heater formed in the interior of the contact hole defined by the side-wall insulating film, and a phase-change film in contact with the top surface of the heater. The heater is in contact with the lower electrode at the bottom surface within the contact hole, and the top surface thereof is located at a lower level than that of the top surface of the side-wall insulating film. The top surface of the heater is located at a lower level than the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.

Abstract: A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.

Abstract: A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13.

Abstract: A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.

Abstract: In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not increased in volume even if the number of times of rewriting is increased. Since the volume of the phase change region is not changed, an electric current level required for rewriting is constant. Thus, the semiconductor device having a memory cell capable of carrying out stable rewriting is obtained.

Abstract: A midsole structure for an athletic shoe includes an upper midsole (3) formed of a soft elastic material, a lower midsole (4) disposed under the upper midsole (3) and formed of a soft elastic material, and a wavy plate assembly (5) interposed between the upper midsole (3) and the lower midsole (4). The wavy plate assembly (5) includes a wavy board (50) and a pair of sidewall members (51) provided discretely from the wavy board (50) and disposed on opposite Bides of the wavy board (50). Each of the sidewall members (51) includes a wavy bottom portion (51b) overlapping the wavy board (50) and an upraised portion (51a) extending upwardly from the wavy bottom portion (51b) to face a side surface of the upper midsole (3). Provision of the wavy board (50) and the sidewall members (51) discretely from each other simplifies a layout of a mold for forming the wavy plate assembly (5), thereby reducing a manufacturing cost.

Abstract: A system for assisting shoe selection can select and present a shoe type that fits a customer by estimating the anatomical characteristics of a foot from the state of the foot. The system includes the following: a measured data input portion for measuring and inputting data that show the state of a foot of a person to be measured; a normalization processing portion for normalizing the data input from the measured data input portion and storing the normalized data at least temporarily; a shoe catalog database for storing information of a plurality of types of shoes; and a selection portion for estimating the anatomical characteristics of the foot of the person based on the normalized data, referring to the shoe catalog database based on the anatomical characteristics, and selecting and presenting a shoe type that fits the person.

Abstract: A midsole structure for an athletic shoe includes an upper midsole (3) formed of a soft elastic material, a lower midsole (4) disposed under the upper midsole (3) and formed of a soft elastic material, and a wavy plate assembly (5) interposed between the upper midsole (3) and the lower midsoles (4). The wavy plate assembly (5) is comprised of a wavy board (50) and a pair of sidewall members (51) provided discretely from the wavy board (50) and disposed on opposite sides of the wavy board (50). Each of the sidewall members (51) is composed of a wavy bottom-portion (51b) overlapping the wavy board (50) and an upraised portion (51a) extending upwardly from the wavy bottom portion (51b) to face a side surface of the upper midsole (3). Provision of the wavy board (50) and the sidewall members (51) discretely from each other simplifies a layout of a mold for forming the wavy plate assembly (5), thereby reducing a manufacturing cost.