Abstract: A honeycomb filter includes a tubular honeycomb structure having porous partition walls with which there are formed a plurality of cells extending from one end surface to the other end surface to become through channels of a fluid; and plugged portions arranged in one open end portion of each of predetermined cells and the other open end portion of each of the remaining cells, porosities of the partition walls are 46% or less, a pore volume ratio of pores having pore diameters of 40 ?m or more is 7.5% or less, and a pore volume ratio of pores having pore diameters of 10 ?m or less is 25% or less, a permeability of the honeycomb structure is 0.8 ?m2 or more, and a coefficient of thermal expansion of the honeycomb structure in a range of 40 to 800° C. is 1.0×10?6/° C. or less.

Abstract: A rack for battery packs for transporting battery modules which are stored therein, and includes a bottom frame and struts located at four corners of the bottom frame. A fitting projection is formed at an upper end of each of the struts, a fitting hole into which the fitting projection is fitted is formed in a bottom part of each of the struts. When the rack is stacked one on top of another by fitting the fitting projection of each of the struts of a lower rack into the projection hole of each of the struts of an upper rack, the rack for battery pack can be used as an installation rack. Accordingly, a separate installation rack is not necessary, and returning a transportation rack is not necessary, either.

Abstract: Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of Inx3Aly3Gaz3N (x3+y3+z3=1, z3>0).

Abstract: In a gas sensor 100, a ratio A2/A1 defined by a ratio of an opening area A1 per first inner gas hole and an opening area A2 per second inner gas hole 138a is set to higher than or equal to 0.9 and lower than or equal to 3.8 and, more preferably, to higher than or equal to 1.5 and lower than or equal to 1.9. Accordingly, adhesion of water to a sensor element 110 can be sufficiently prevented. In addition, a ratio B2/B1 defined by a ratio of a total opening area B1 of the first inner gas holes to a total opening area B2 of the second inner gas holes 138a is set to higher than or equal to 0.85 and, more preferably, higher than or equal to 1.5. Accordingly, adhesion of water to the sensor element can be more reliably, effectively prevented.

Abstract: A ceramic filter is provided with a porous substrate 3 “made of ceramic and having partition walls 1 separating and forming a plurality of cells 2 extending from one end face 11 to the other end face 12”, a separation membrane 21 “made of ceramic and disposed on wall surfaces of the cells 2”, and glass seals 31 disposed on the one end face 11 and on the other end face 12 “so as not to cover openings of the cells 2”. Ceramic particles having a thermal expansion coefficient of 90 to 110% of that of glass contained in the glass seals 31 are dispersed in the glass seals 31. There is provided a ceramic filter usable for a long period of time in high temperature conditions.

Abstract: A gas sensor element is heated at a temperature of 500° C. or higher for 15 minutes or more in a treatment atmosphere containing one or more gases selected from the gas group consisting of nitrogen (N2), oxygen (O2), carbon monoxide (CO), hydrogen (H2) and hydrocarbons (HC) and giving an air ratio of 0.80 to 1.10. In a gas sensor element to which such a treatment has been applied, a stable output is obtained without causing overshoot to an actual NOx concentration (input) even when a rapid exhaust gas change takes place.

Abstract: A semiconductor device having small leakage current and high breakdown voltage during reverse blocking, small on-state resistance and large output current at forward conduction, short reverse recovery time at shutoff, and high peak surge current value is provided. An n-type layer is made of a group-III nitride, and a p-type layer is made of a group-IV semiconductor material having a smaller band gap than the group-III nitride. The energy level at the top of the valence band of the n-type layer is lower than the energy level at the top of the valence band of the p-type layer, so that a P-N junction semiconductor device satisfying the above requirements is obtained. Further, a combined structure of P-N junction and Schottky junction by additionally providing an anode electrode to be in Schottky contact with the n-type layer also achieves the effect of decreasing voltage at the rising edge of current resulting from the Schottky junction.

Abstract: There is provided a silica membrane filter having performance of selectively separating an aromatic compound and performance of selectively separating an alcohol. The silica membrane filter is provided with a porous substrate and a silica membrane. The ratio of a He gas permeation amount to an N2 gas permeation amount (He gas permeation amount/N2 gas permeation amount) is 7 or less, and the ratio of the N2 gas permeation amount to a SF6 gas permeation amount (N2 gas permeation amount/SF6 gas permeation amount) is 1.5 or more.

Abstract: A metal-air battery system includes: a metal-air battery (2) including a case (1) and a charge/discharge member arranged in said case and having a cathode (4), an anode and an electrolyte; a CO2 absorbing member (6) having a CO2 selective absorber (5) selectively absorbing CO2 over O2; an outside air supplying member (7) supplying outside air to said CO2 absorbing member; a purified air supplying member (8) supplying purified air to said cathode, the purified air having undergone absorptive CO2 removal by said CO2 selective absorber; and a recycling mechanism (10) recycling said CO2 selective absorber.

Abstract: The carrying apparatus is a carbon fiber-containing resin sheet carrying apparatus for carrying a carbon fiber-containing resin sheet W heated in a heating furnace to a pressing device, comprising a slider 4 that moves between the heating furnace and the pressing device and a sheet holder 10 that is mounted thereon and chucks both the end parts of the carbon fiber-containing resin sheet W to apply tension. The sheet holder 10 can have a structure such that it comprises chuck claws 13, 16 and a tension unit 19 that displaces these chuck claws to the outside. The sheet holder 10 may have a structure such that it comprises a holding metal fitting with a spring, that is arranged inside a holding frame and a chuck claw that chucks this holding frame.

Abstract: The noble metal coating of the present invention is formed on a ceramic substrate. The noble metal coating has a thickness of less than 2 ?m and comprises a matrix metal and a ceramic fine particle. The matrix metal includes at least one metal selected from a group consisting of Pt, Pd, Ru, Rh, Os, Ir and Au as a main component. The content of the ceramic fine particle is preferably 3 to 30 parts by weight with respect to 100 parts by weight of the matrix metal. The ratio between the average particle size of the ceramic fine particle and the thickness of the noble metal coating is preferably 1/1.5 to 1/400.

Abstract: To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120° C. to 130° C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat.

Abstract: Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer.

Abstract: [Summary] [Subject] Problems, such as increase in the electrical resistance in the junction(s) of the terminal(s) of a power semiconductor element and the electrode(s) of a peripheral circuit which are disposed on a power circuit and decrease in the dielectric strength voltage between adjacent junctions, resulting from the insufficient alignment of the terminal(s) of the power semiconductor element and the electrode(s) of the peripheral circuit, in the high-capacity module which is intended to attain reduction in size and weight, reduction in serge, and reduction in a loss by lamination of the peripheral circuit, such as a drive circuit, onto the power circuit, should be reduced.

Abstract: An extruder comprises an extruding section, a chamber drum, and a forming section. The extruding section kneads and extrudes a kneaded material including a ceramic raw material. The chamber drum includes a first space portion which extends from the extrusion port side of the extruding section in an extruding direction and allows the kneaded material to flow in the extruding direction, and a second space portion which extends from a downstream side of the first space portion in a downward direction, allows the kneaded material to flow in the downward direction different from the extruding direction, and has a discharge port to discharge the kneaded material. The forming section includes a die through which the kneaded material discharged through the discharge port of the chamber drum is pushed out, to extrude and form ceramic formed bodies.

Abstract: An NaS battery module includes a container, a plurality of cells for an NaS battery and sand. The side walls of the container partition the inside and outside of the container in a direction in which the arrangement plane of the cells extends. An upper wall and a lower wall of the container partition the inside and outside of the container in a direction perpendicular to the direction in which the arrangement plane of the cells extends. The lower wall and the side walls are high heat insulating walls whereas the upper wall is a solid low heat insulating wall having a heat insulating property lower than that of the high heat insulating wall. The cells and the sand are housed inside of the container. A variable louver is disposed outside of the upper wall so as to cover the outer surface of the upper wall.

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section, and a pair of band-like electrode sections arranged on a side surface of the honeycomb structure section, an electrical resistivity of the honeycomb structure section is from 1 to 200 ?cm, in a cross section which is perpendicular to an extending direction of cells, the one electrode section is disposed on an opposite side of the other electrode section via the center O, an angle which is 0.5 time as large as a central angle of the electrode section is from 15 to 65°, and each of the electrode sections is formed so as to become thinner from a center portion in a peripheral direction toward both ends in the peripheral direction in the cross section which is perpendicular to the cell extending direction in a honeycomb structure.

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section, and a pair of band-like electrode sections arranged on a side surface of the honeycomb structure section, an electrical resistivity of the honeycomb structure section is from 1 to 200 ?cm, in a cross section which is perpendicular to a cell extending direction, the one electrode section is disposed on an opposite side of the other electrode section via the center O, an angle which is 0.5 time as large as a central angle of the electrode section is from 15 to 65°, and each of the electrode sections is formed so as to become thinner from a center portion in a peripheral direction toward both ends in the peripheral direction, and in the cross section which is perpendicular to the extending direction of the cells, the whole outer peripheral shape is a round shape.

Abstract: A honeycomb structure is provided with a pair of electrode sections disposed on the side face of the honeycomb structure section. The honeycomb structure section has an electric resistivity of 1 to 200 ?cm, and each of the pair of electrode sections is formed into a band-like shape extending in a cell extension direction of the honeycomb structure section. In a cross section perpendicular to the cell extension direction, one electrode section of the pair of electrode sections is disposed across the center O of the honeycomb structure section from the other electrode section of the pair of electrode sections. In a cross section perpendicular to the cell extension direction, 0.5 time the central angle of each of the electrode sections is 15 to 65°.

Abstract: Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN being alternately laminated, and a first intermediate layer made of AlyGa1-yN (0?y?1). The relationship of x(1)?x(2)? . . . ?x(n?1)?x(n) and x(1)?x(n) is satisfied, where n represents the number of laminations of each of the first and second composition layers, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. The second composition layer is coherent to the first composition layer, and the first intermediate layer is coherent to the composition modulation layer.