Abstract: According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Abstract: The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.

Abstract: A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

Abstract: An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10?2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.

Abstract: A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.

Abstract: An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.

Abstract: An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.

Abstract: In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.

Abstract: The present invention provides a laminated conductive film, comprising a transparent conductive film and Al-based film, that is capable of realizing a high-quality film with superior electro-optical properties, without providing a buffer layer or protective layer. A laminated conductive film according to one aspect of the present invention is provided with a transparent conductive film having optical transmissivity, and a metal conductive film laminated directly on the transparent conductive film and electrically connected to the transparent conductive film. The metal conductive film is made of Al or has Al as a main component thereof and contains at least one of nitrogen atom and oxygen atom at least in the vicinity of the interface with the transparent conductive film.

Abstract: A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract: A thin film transistor array substrate includes a gate electrode formed on a substrate, a gate insulating film formed over the gate electrode, a source electrode and a drain electrode that are formed on the gate insulating film and include a transparent conductive film and a metal film formed on the transparent conductive film, a semiconductor film formed over the source electrode and the drain electrode to be electrically connected to the source electrode and the drain electrode, and a pixel electrode formed extending from the drain electrode.

Abstract: A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract: A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.