Abstract: The present invention is intended to provide a technology that can utilize the advantages of both a load sensing control and a regeneration circuit without causing any problem. A regeneration circuit is added to a hydraulic circuit provided with a hydraulic pressure signal line for detecting a hydraulic pressure value of a circuit and controlling a volume of hydraulic fluid to a cylinder 1 with reference to the detected value. A pressure reducing valve 6 that outputs a reduced pressure as an operating signal to a pump 2, and subsequently the controlling means 5 causes the pressure reducing valve 6 to output a pressure reduction command to a pump 2 and thus to reduce a discharge rate from the pump 2, when the regeneration circuit is in a regeneration state.

Abstract: The present invention is intended to provide a technology that can utilize the advantages of both a load sensing control and a regeneration circuit without causing any problem. A regeneration circuit is added to a hydraulic circuit provided with a hydraulic pressure signal line for detecting a hydraulic pressure value of a circuit and controlling a volume of hydraulic fluid to a cylinder 1 with reference to the detected value. A pressure reducing valve 6 that outputs a reduced pressure as an operating signal to a pump 2, and subsequently the controlling means 5 causes the pressure reducing valve 6 to output a pressure reduction command to a pump 2 and thus to reduce a discharge rate from the pump 2, when the regeneration circuit is in a regeneration state.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.

Abstract: By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

Abstract: By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

Abstract: A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.

Abstract: An ultraviolet light reaction system is constructed for surface cleaning/surface processing, a processing speed and an apparatus size that can not be attained by any conventional chemical reaction system, are realized, and realization of a time-sharing performance/a high-throughput performance/a compact size is intended. Using an excimer ultraviolet lamp whose light source is excimer ultraviolet rays of a wavelength that transmissive distances to air, gas, and water are 2 mm or more, respectively, surface processing (such as a surface cleaning process) of a substrate disposed in a one-by-one substrate chamber is preformed.

Abstract: An ultraviolet light reaction system is constructed for surface cleaning/surface processing, a processing speed and an apparatus size that can not be attained by any conventional chemical reaction system, are realized, and realization of a time-sharing performance/a high-throughput performance/a compact size is intended. Using an excimer ultraviolet lamp whose light source is excimer ultraviolet rays of a wavelength that transmissive distances to air, gas, and water are 2 mm or more, respectively, surface processing (such as a surface cleaning process) of a substrate disposed in a one-by-one substrate chamber is preformed.

Abstract: A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.

Abstract: An industrial material such as metal, ceramics or plastics whose surface has a film passivated by fluoridation and a process of manufacturing the above industrial material. The industrial material comprises a substrate, a nickel alloy film formed on the substrate and containing nickel, semimetal and/or other metal whose fluoride becomes a volatile compound, and a fluorine passivated film formed at least on a surface of the nickel alloy film in such a manner that the fluorine passivated film contains nickel and does not contain said other metal or the semimetal, and satisfies stoichiometric ratio. The process of manufacturing an industrial material comprises the steps of performing grounding treatment of a surface of a substrate, forming a nickel alloy film, on the surface of the substrate, containing nickel, semimetal and/or other metal, and forming a fluorine passivated film on the nickel alloy film.

Abstract: An apparatus for injecting constant quantitative chemicals which is capable of injecting a chemical solution into ultra pure water without generating particulate contamination, and furthermore, the injection interval of the chemical solution to the cleaning nozzle is controlled in units of seconds within a range of a few seconds to 10 or more seconds, and the switching of the type of chemical solution and the changeover to ultra pure water cleaning can be conducted in a short period of time of approximately 1 second.

Abstract: Fluorine is recovered as calcium fluoride from a fluoroetchant solution composed mainly of hydrogen fluoride and ammonium fluoride using a sealed reaction tank equipped with a supply port for adding the fluoroetchant solution to the tank, a supply port for adding calcium carbonate to the tank, a vapor supply port for adding steam to heat the solution in the tank, an air supply port for providing air to aerate the contents of the tank, a stirrer for stirring the contents of the tank, an ejector for removing vapors from the tank connected to the tank via a mist separator for separating mist from the vapors being removed from the tank, and an exhaust port for removing calcium fluoride from the tank.

Abstract: Calcium fluoride with high purity of very small content of unreacted calcium carbonate and silica is recovered from an etchant mainly composed of hydrogen fluoride or hydrogen fluoride and ammonium fluoride. The etchant is reacted with calcium carbonate with transfer directions of the etchant and calcium carbonate being controlled within a composition region in which mole equivalent ratio of ammonium fluoride/hydrogen fluoride is specified.

Abstract: A method of preparing hydrofluoric acid of high purity at the point of use by causing molecular diffusion of hydrogen fluoride into ultrapure water through a resin membrane. The high-purity acid is available at the site of use free of contamination that would occur during transport from a site of preparation.

Abstract: A tungsten film forming apparatus includes a reaction chamber, means for introducing WF.sub.6 into said reaction chamber, and means for introducing H.sub.2 gas into said reaction chamber, wherein at least the portion of at least said reaction chamber is made of the metal material whose surface is covered with the fluorinated paasivation film mainly consisting of the almost stoichiometric metal fluoride. It becomes possible to form a high quality tungsten film at a low substrate temperature by use of said tungsten film forming apparatus.