Abstract: A semiconductor module includes a semiconductor device that includes first and second fin bases having first and second connecting portions and a resin for sealing the outer peripheral side surfaces of first to fourth conductors, and a flow path forming body connected to the first and second connecting portions of the first and second fin bases. A first elastically deformed portion, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends of the first and second connecting portions becomes smaller than a distance in a thickness direction between intermediate portions of the first and second connecting portions. The resin is filled between the first and second connecting portions of the first and second fin bases are filled with the resin therebetween.

Abstract: An electric circuit body including a power semiconductor element joined to one surface of a conductor plate; a sheet member including an insulating layer joined to the other surface of the conductor plate; a sealing member that integrally seals the sheet member, the conductor plate, and the power semiconductor element in a state where a surface of the sheet member opposite to a surface joined to the conductor plate is exposed; a cooling member that cools heat of the power semiconductor element; and a heat conduction member provided between the opposite surface of the sheet member and the cooling member, where the heat conduction member is provided over a first projection region facing the conductor plate and a second projection region facing the sealing member, and a thickness of the heat conduction member is thicker in the second projection region than in the first projection region.

Abstract: An electrical circuit body includes a power semiconductor element joined to one face of a conductor plate, a sheet member including an insulating layer joined to the other face of the conductor plate, a sealing member integrally sealing the sheet member, the conductor plate, and the power semiconductor element in a state where a face, of the sheet member, opposite to a face joined to the conductor plate is exposed, and a cooling member bonded to the opposite face of the sheet member via a heat conduction member, wherein the sealing member has a recess along an outer edge of the sheet member on a surface where the sheet member is exposed, the recess being located outside the sheet member.

Abstract: A power module includes a power semiconductor element converting DC power into AC power and outputting the AC power to a motor; a conductor electrically connected to the power semiconductor element; a substrate having a substrate wiring connected to the conductor on a surface; and a resin sealing material sealing the power semiconductor element, the conductor, and the substrate, in which the substrate has, at a position in contact with an end portion of the resin sealing material, a concave portion formed by a surface of the substrate wiring becoming concave in a continuously curved surface shape.

Abstract: Provided is an electric circuit body including: a power semiconductor element; a first conductor plate configured to be connected to one surface of the power semiconductor element; a first sheet-shaped member having a first resin insulation layer and configured to at least cover a surface of the first conductor plate; a sealing material configured to seal each of the power semiconductor element, the first conductor plate, and an end of the first sheet-shaped member; and a first cooling member configured to be adhesively attached to the first sheet-shaped member.

Abstract: The resin material 336 is arranged in a first region 421 surrounded by the fin base 440, the inclined portion 343 of the cover member 340, and the outermost peripheral heat dissipation fins 334 arranged on the outermost peripheral side. Then, the resin material 336 is caused to protrude to the first region 421. That is, the resin material 336 is arranged in the first region 421. In a cross section perpendicular to the refrigerant flow direction (Y direction), a cross-sectional area of the first region 421 is larger than an average cross-sectional area 423 of the adjacent heat dissipation fins 331. Then, a cross-sectional area of a second region 422 formed between the resin material 336 arranged in the first region 421 and the outermost peripheral heat dissipation fin 334 arranged on the outermost peripheral side is smaller than the average cross-sectional area 423 of the heat dissipation fins.

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 ?m capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 ?m interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

Abstract: Detection accuracy of a collector sense in detecting a voltage is improved. A power module 300 has a first conductor 410 and a second conductor 411 to which a plurality of active elements 317 and 315 configuring upper and lower arm circuits are connected. In addition, the power module 300 has an AC side terminal 320B protruding from one side 301a, a positive electrode side terminal 315B and a negative electrode side terminal 319B which protrude from the other side 301b, an intermediate electrode portion 414 that connects the first conductor 410 and the second conductor 411 to each other, and a collector sense wiring 452a in which a collector electrode of an active element 157 and the first conductor 410 are connected to each other via a sense connection portion 415.

Abstract: An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.

Abstract: An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.

Abstract: A semiconductor module 900 includes a semiconductor device 300 that includes first and second fin bases 800 having first and second connecting portions 810 and a resin 850 for sealing the outer peripheral side surfaces of first to fourth conductors 410 to 413, and a flow path forming body 600 connected to the first and second connecting portions 810 of the first and second fin bases 800. A first elastically deformed portion 801, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends 810a of the first and second connecting portions 810 becomes smaller than a distance in a thickness direction between intermediate portions 804 of the first and second connecting portions 810. The resin 850 is filled between the first and second connecting portions 810 of the first and second fin bases 800 are filled with the resin 850 therebetween.

Abstract: Detection accuracy of a collector sense in detecting a voltage is improved. A power module 300 has a first conductor 410 and a second conductor 411 to which a plurality of active elements 317 and 315 configuring upper and lower arm circuits are connected. In addition, the power module 300 has an AC side terminal 320B protruding from one side 301a, a positive electrode side terminal 315B and a negative electrode side terminal 319B which protrude from the other side 301b, an intermediate electrode portion 414 that connects the first conductor 410 and the second conductor 411 to each other, and a collector sense wiring 452a in which a collector electrode of an active element 157 and the first conductor 410 are connected to each other via a sense connection portion 415.

Abstract: An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.

Abstract: An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.

Abstract: An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.

Abstract: Provided is a compact power conversion device which is excellent in liquid tightness and has high reliability of a terminal connection portion. A power conversion device according to the present invention includes: a case that houses a power semiconductor; a flow path forming body that forms a flow path with an outer surface of the case; a first fixing material in contact with a refrigerant flowing in the flow path; and a second fixing material that is in contact with the first fixing material and the flow path forming body and covers a direction of displacement of the case of the first fixing material caused by water pressure.

Abstract: An object of the present invention is to provide a power semiconductor device enabling maintenance in reliability and improvement in productivity. According to the present invention, provided are: a circuit body including a semiconductor element and a conductive portion; a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation; a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base; a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base.

Abstract: An object is to provide the structure of an ECU enabling resin to be filled without deformation of an electronic circuit board. A resin-sealed vehicle-mounted control device includes: a circuit board; a base member housing the circuit board; and resin filled between the circuit board and the base member. The base member has: a base portion fixing the circuit board; and a side wall opposed to the side surface side of the circuit board. The resin is provided at least between the circuit board and the base portion. The side wall has an opening at any position on the side of the base portion from a position opposed to the side surface side of the electronic circuit board.