Abstract: An MRAM according to the present invention has a magnetoresistance element 1. The magnetoresistance element 1 has: a first magnetic layer 10 including a first region 11 whose magnetization direction is reversible; a second magnetic layer 30 whose magnetization direction is fixed parallel to a magnetization easy axis direction of the first region 11; and a non-magnetic layer 20 sandwiched between the first magnetic layer 10 and the second magnetic layer 30. A domain wall DW is formed at at least one end of the first region 11 of the first magnetic layer 10. The second magnetic layer 30 is formed to overlap with the first region and the above-mentioned one end. At a time of data writing, a write current is applied between the first magnetic layer 10 and the second magnetic layer 30.

Abstract: A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient ? in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient ? in the magnetization switching region 13.

Abstract: An MRAM according to the present invention has a pinned layer 60 and a magnetic recording layer 40 connected to the pinned layer 60 through a tunnel barrier layer 50. The magnetic recording layer 40 has a first free layer 10, a second free layer 30 being in contact with the tunnel barrier layer 50, and an intermediate layer 20 provided between the first free layer 10 and the second free layer 30. The first free layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and overlaps the second free layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization orientation is fixed in a first direction.

Abstract: A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.