Abstract: Disclosed is a technique capable of connecting patterns of a master mask easily. Integrated circuit patterns are transferred onto pattern transfer regions of a product mask by the reduced projection exposure using a plurality of IP masks. Thereafter, the patterns of the adjacent pattern transfer regions are connected by a light-shielding pattern made of an organic film, which is formed by the exposure using an energy beam.

Abstract: In order to shorten time for fabricating semiconductor integrated circuit devices, a wafer is exposed as a chip area with defects of a mask is covered with a masking blade for light shielding.

Abstract: When a through hole 17 is transferred on a pair of contact holes 10 putting a data line DL therebetween, even if a pair of through holes 17 putting the data line DL therebetween are deviated, the pair of through holes are connected to the contact hole 10b and not connected to the data line DL. By this manner, a mask pattern formed by a photomask is use so as to be deviated and disposed in a direction separately from the data line DL at a design stage. This results in improvement of an alignment tolerance of the pattern.

Abstract: The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase—and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern.

Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

Abstract: A method of manufacturing an electronic device, such as a high-speed semiconductor integrated circuit device, with improved dimensional accuracy in transferring fine patterns.

Abstract: Well printing a specified pattern even when exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm.

Abstract: A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this.

Abstract: On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

Abstract: Provided is a fabrication method of a semiconductor integrated circuit device, which comprises properly using a photomask having light blocking patterns made of a metal and another photomask having light blocking patterns made of a resist film upon exposure treatment, depending on the fabrication step of the semiconductor integrated circuit device.

Abstract: The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase- and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern.

Abstract: After a shade pattern constituted by a resist film formed on a photomask is stripped, a new shade pattern constituted by a resist film is formed on the photomask to reclaim a photomask.

Abstract: After a shade pattern constituted by a resist film formed on a photomask is stripped, a new shade pattern constituted by a resist film is formed on the photomask to reclaim a photomask.

Abstract: After a shade pattern constituted by a resist film formed on a photomask is stripped, a new shade pattern constituted by a resist film is formed on the photomask to reclaim a photomask.

Abstract: A ferromagnetic tunneling magneto-resistive head includes a first yoke, divided into a proximal portion and a distal portion across a gap; a second yoke formed so as to resist the first yoke, positioned opposite a magnetic recording medium, a read head gap being formed between the first and second yokes; a tunneling magneto-resistive element including at least one layer of insulating material, the insulating layer being sandwiched between at least two layers of magnetic material, the tunneling magneto-resistive element magneto-electrically converting a signal magnetic field applied via the first yoke and the second yoke by the recording medium making sliding contact with the read head gap; and a pair of electrodes positioned one at each end of the tunneling magneto-resistive element in a direction of layering of the magnetic layers.

Abstract: In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.

Abstract: Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern 28B has a main light transferring pattern 26c1, a plurality of auxiliary light transferring patterns 26c2 disposed thereabout, and a phase shifter S disposed in the main light transferring pattern 26c1. The auxiliary light transferring patterns 26c2 are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern 26c1 are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin.

Abstract: When a through hole 17 is transferred on a pair of contact holes 10 putting a data line DL therebetween, even if a pair of through holes 17 putting the data line DL therebetween are deviated, the pair of through holes are connected to the contact hole 10b and not connected to the data line DL. By this manner, a mask pattern formed by a photomask is use so as to be deviated and disposed in a direction separately from the data line DL at a design stage. This results in improvement of an alignment tolerance of the pattern.

Abstract: A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.

Abstract: Optical systems of projection exposure apparatuses may have aberrations, and this fact may hamper the achievement of predetermined accuracy of dimensions and position of a circuit pattern which is necessary to attain desired device performance. Further, because of the difficulty in measuring the above-described aberrations, it was not possible to correct the optical system so as to realize a substantially aberration-free characteristic. The aberrations of a projection lens can be found accurately by steps of: measuring the light intensities of a projected image of a particular pattern on a mask at n different points in the projected image; and solving n simultaneous equations with m (m<n) unknown weighting coefficients for m known wavefront aberration functions. Based on the aberrations thus found, one can adjust aberration characteristic of the projection lens or correct dimensions and positions of patterns on a mask instead.