Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

Abstract: The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.

Abstract: The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitride

Abstract: The invention relates to the field of production in thin coatings of electronic devices and/or MEMS and relates to an improved method for forming a pattern in a thin SiARC anti-reflective coating, comprising the doping by deposition of such SiARC coating covered with a resist pattern through a protective coating of the resist pattern, then etching the doped zones of the SiARC coating (FIG. 3c).

Abstract: Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

Abstract: Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

Abstract: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y?+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 ? and 4 ?. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2.times.2.92 ?) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2.times.3.27 ?). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

Abstract: The instrumented rolling bearing device comprises a rotating ring 5, a non-rotating ring 4, and a detection assembly 3 equipped with a sensor unit 11 comprising an external annular portion 11b and a means of axially retaining the sensor unit on the non-rotating ring positioned on the external annular portion 11b. The outside diameter of the external annular portion 11b is smaller than the inside diameter of a frontal radial surface 4b of the non-rotating ring.

Abstract: The invention relates to the use of a ceramic of formula Ba2(1?x)M2xIn2(1?y)M?2yO4+?(OH)?? where M represents at least one metal cation with an oxidation number II or III or a combination thereof, M? represents at least one metal cation with an oxidation number III, IV, V or VI or a combination thereof, 0<x<1, 0<y<1, ?<2 and 0<??<2, as solid proton-conducting electrolyte in an electrochemical device, in particular a fuel cell, an electrolytic cell, a membrane separating hydrogen from a gas mixture, or also a hydrogen detector, at an operating temperature of said electrochemical device preferably comprised between 200° C. and 600° C.

Abstract: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y?+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 ? and 4 ?. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2.times.292 ?) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2.times.3.27 ?). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

Abstract: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z (x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 ? and 4 ?. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 ?) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 ?). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

Abstract: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 ? and 4 ?. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 ?) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 ?). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

Abstract: The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching, b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material, c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.

Abstract: The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps:

Abstract: A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.

Abstract: A process for the anisotropic etching of a dielectric organic polymer material using a plasma is provided. The gas phase of the plasma may include a gas mixture of O2/NH3, O2/H2O, O2/CH4 or O2/H2. The oxygen concentration of the gas mixture may be less than 40% by volume. The process may include the fabrication of metal interconnects in a damascene-type structure of an integrated circuit.

Abstract: A process for patterning a feature on a substrate using a plasma polymerized methylsilane (PPMS) photoresist layer or similar organosilicon film. The process includes the step of depositing a PPMS film having upper and lower strata such that the upper stratum is more photosensitive to ultraviolet radiation than is the lower stratum. In one embodiment, the upper and lower strata are formed in a multistep deposition process that, preferably, takes place in a single deposition chamber. In another embodiment, the upper and lower strata are formed by a process in which deposition parameters are modified to deposit a PPMS layer having a photosensitivity gradient between the upper and lower strata. In still another embodiment, various intermediate strata are formed. Preferably, each intermediate stratum has a photosensitivity that is higher than the stratum directly beneath it.

Abstract: The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.

Abstract: A process for patterning a feature on a substrate using; a plasma polymerized methylsilane (PPMS) photoresist layer or similar organosilicon film. The process includes the step of depositing a PPMS film having upper and lower strata such that the upper stratum is more photosensitive to ultraviolet radiation than is the lower stratum. In one embodiment, the upper and lower strata are formed in a multistep deposition process that, preferably, takes place in a single deposition chamber. In another embodiment, the upper and lower strata are formed by a process in which deposition parameters are modified to deposit a PPMS layer having a photosensitivity gradient between the upper and lower strata. In still another embodiment, various intermediate strata are formed. Preferably, each intermediate stratums has a photosensitivity that is higher than the stratum directly beneath it.