Patents by Inventor Omkaram Nalamasu
Omkaram Nalamasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120318773Abstract: The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.Type: ApplicationFiled: April 25, 2012Publication date: December 20, 2012Applicant: Applied Materials, Inc.Inventors: Banqiu Wu, Ajay Kumar, Kartik Ramaswamy, Omkaram Nalamasu
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Patent number: 8334017Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.Type: GrantFiled: September 17, 2010Date of Patent: December 18, 2012Assignee: Applied Materials, Inc.Inventors: Victor L. Pushparaj, Pravin K. Narwankar, Dieter Haas, Bipin Thakur, Mahesh Arcot, Vikas Gujar, Omkaram Nalamasu
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Publication number: 20120312474Abstract: Methods of and hybrid factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A hybrid factory includes one or more tool sets for fabricating a thin-film battery.Type: ApplicationFiled: June 10, 2011Publication date: December 13, 2012Inventors: Byung-Sung Kwak, Stefan Bangert, Dieter Haas, Omkaram Nalamasu
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Publication number: 20120218621Abstract: The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.Type: ApplicationFiled: October 22, 2010Publication date: August 30, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Byung Sung Leo Kwak, Kaushal K. Singh, Joseph G. Gordon, II, Omkaram Nalamasu
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Patent number: 8252772Abstract: The present invention provides nanoscale and microscale compositions useful for a variety of purposes, including the diagnosis and treatment of diseases. In one embodiment, the present invention provides a disease treatment system comprising a thermal induction agent and a radiation source, wherein the thermal induction agent comprises at least one carbon nanotube, at least one carbon microtube, or a mixture thereof.Type: GrantFiled: May 25, 2007Date of Patent: August 28, 2012Assignee: Wake Forest UniversityInventors: Suzy Torti, Frank Torti, David Loren Carroll, Steven Akman, Omkaram Nalamasu, Pulickel Ajayan
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Publication number: 20120156819Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.Type: ApplicationFiled: February 28, 2011Publication date: June 21, 2012Inventors: Mingwei Zhu, Vivek Agrawal, Nag B. Patibandla, Omkaram Nalamasu
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Publication number: 20120080092Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.Type: ApplicationFiled: September 30, 2011Publication date: April 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Kaushal K. Singh, Robert Jan Visser, Srikant Rao, Bhaskar Kumar, Claire J. Carmalt, Ranga Rao Arnepalli, Omkaram Nalamasu, Gaurav Saraf, Sanjayan Sathasivam, Christopher Stuart Blackman
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Patent number: 8136551Abstract: Precise control over gas delivery is achieved at the micro and nanobar mass levels by incorporating blocks of aligned carbon nanotubes into valves and finely adjusting the flow through the block by controlling a compressing force applied to the block. A valve for controlling gas flow includes: a valve housing; a block of aligned carbon nanotubes, the block and the valve housing being configured to direct the gas through the carbon nanotubes in the block; and a device configured to apply a force to the block in order to compress the block, wherein the block is compressed perpendicular to the walls of the carbon nanotubes in the block; whereby the application of the force to the walls restricts the flow of the gas through the valve. The valve may further comprise an electrical device for monitoring the electrical properties of the carbon nanotube block. This monitoring provides information on the state of compression of the carbon nanotube block and/or the gas that is flowing through the valve.Type: GrantFiled: August 29, 2008Date of Patent: March 20, 2012Assignee: Applied Materials, Inc.Inventors: Victor L. Pushparaj, Omkaram Nalamasu
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Publication number: 20110315186Abstract: Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.Type: ApplicationFiled: May 12, 2011Publication date: December 29, 2011Applicant: APPLIED MATERIALS, INC.Inventors: James M. Gee, Nag B. Patibandla, Kaushal K. Singh, Omkaram Nalamasu
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Patent number: 7971489Abstract: A robust, stand-alone load cell comprises a block of aligned carbon nanotubes with parallel electrodes on opposing sides of the block and an electrical circuit connected between the electrodes for measuring the electrical resistance of the block. The nanotubes are preferably aligned perpendicular to the electrodes. Carbon nanotube-based load cells may be incorporated into a wafer assembly for characterizing semiconductor processing equipment. Such a wafer assembly includes two parallel wafers with a plurality of carbon nanotube load cells positioned between and attached to both wafers. The load cells are independently electrically connected to a device which monitors and records the resistivity of the load cell.Type: GrantFiled: August 29, 2008Date of Patent: July 5, 2011Assignee: Applied Materials, Inc.Inventors: Victor L. Pushparaj, Omkaram Nalamasu, Manoocher Birang
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Publication number: 20110126402Abstract: Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery.Type: ApplicationFiled: September 14, 2010Publication date: June 2, 2011Inventors: Byung-Sung Kwak, Stefan Bangert, Dieter Haas, Omkaram Nalamasu
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Publication number: 20110100955Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.Type: ApplicationFiled: September 17, 2010Publication date: May 5, 2011Applicant: Applied Materials, Inc.Inventors: VICTOR L. PUSHPARAJ, Pravin K. Narwankar, Dieter Haas, Bipin Thakur, Mahesh Arcot, Vikas Gujar, Omkaram Nalamasu
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Patent number: 7906558Abstract: The invention provides the use of novel, binary guanosine gels for simple, rapid and nondestructive solubilization of individual single walled carbon nanotubes (SWNTs) at high concentrations. The gels exhibit selectivity between metallic and semiconducting SWNTs and, further, among SWNTs with different chiralities.Type: GrantFiled: June 11, 2010Date of Patent: March 15, 2011Assignee: Rensselaer Polytechnic InstituteInventors: Linda B. McGown, Omkaram Nalamasu, Yuehua Yu
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Publication number: 20110051322Abstract: Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer.Type: ApplicationFiled: August 25, 2010Publication date: March 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Victor L. Pushparaj, Omkaram Nalamasu, Steven Verhaverbeke
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Publication number: 20110045349Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.Type: ApplicationFiled: August 18, 2010Publication date: February 24, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Victor L. Pushparaj, Pravin K. Narwankar, Omkaram Nalamasu
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Publication number: 20100313951Abstract: Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate.Type: ApplicationFiled: June 9, 2010Publication date: December 16, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Omkaram Nalamasu, Charles Gay, Victor L. Pushparaj, Kaushal K. Singh, Robert J. Visser, Majeed A. Foad, Ralf Hofmann
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Publication number: 20100261049Abstract: A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode.Type: ApplicationFiled: April 13, 2009Publication date: October 14, 2010Applicant: APPLIED MATERIALS, INC.Inventors: BYUNG-SUNG LEO KWAK, Nety M. Krishna, Omkaram Nalamasu, Kaushal K. Singh, Steven Verhaverbeke
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Publication number: 20100252108Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2, as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.Type: ApplicationFiled: December 21, 2009Publication date: October 7, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Kaushal K. Singh, Omkaram Nalamasu, Nety M. Krishna, Michael Snure, Ashutosh Tiwari
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Publication number: 20100249250Abstract: The invention provides the use of novel, binary guanosine gels for simple, rapid and nondestructive solubilization of individual single walled carbon nanotubes (SWNTs) at high concentrations. The gels exhibit selectivity between metallic and semiconducting SWNTs and, further, among SWNTs with different chiralities.Type: ApplicationFiled: June 11, 2010Publication date: September 30, 2010Applicant: Rensselaer Polytechnic InstituteInventors: Linda McGown, Omkaram Nalamasu, Yuehua Yu
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Publication number: 20100221606Abstract: A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.Type: ApplicationFiled: March 2, 2009Publication date: September 2, 2010Inventors: Omkaram Nalamasu, Steven Verhaverbeke